公开(公告)号：US20150221777A1

公开(公告)日：2015-08-06

申请号：US14684774

申请日：2015-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Masayuki KAJIWARA ,  Masataka NAKADA ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L27/1266 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L27/1214 ,  H01L29/78606 ,  H01L29/78666 ,  H01L29/78669 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/00

Abstract: An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.