公开(公告)号：US12254071B2

公开(公告)日：2025-03-18

申请号：US18237437

申请日：2023-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Yoshimoto ,  Susumu Kawashima ,  Koji Kusunoki ,  Kazunori Watanabe

IPC: G06F3/041 ,  G06F21/32 ,  G06V40/13

Abstract: A semiconductor device including a biometric recognition function and a touch sensor or near touch sensor function is provided. The semiconductor device includes a light-emitting device and an imaging device. The imaging device includes a gate driver circuit and m rows of pixels (m is an integer more than or equal to 2). The gate driver circuit includes a plurality of first register circuits and second register circuits whose number is less than that of the first register circuits. The first register circuits are connected with each other in series and the second register circuits are connected with each other in series. The gate driver circuit has a function of operating in the first mode and the second mode. In the first mode, the first register circuits are in the on state and the second register circuits are in the off state, and in the second mode, the second register circuits are in the on state and the first register circuits are in the off state.

公开(公告)号：US11984064B2

公开(公告)日：2024-05-14

申请号：US18018051

申请日：2021-07-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Susumu Kawashima ,  Koji Kusunoki ,  Kazunori Watanabe ,  Satoshi Yoshimoto

IPC: G09G3/32 ,  H10K59/131

CPC classification number: G09G3/32 ,  H10K59/131 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/02 ,  G09G2310/08 ,  G09G2330/021

Abstract: A display apparatus having a wide range of threshold voltage compensation function is provided. In the display apparatus, a p-channel transistor is used as a driving transistor of the light-emitting device. Discharging is performed through a source-drain path while constant voltage is supplied to a gate so that Vth is extracted between the gate and the source. In addition, when a drain potential is set to the sum of forward voltage and a cathode potential of the light-emitting device or a potential sufficiently lower than the sum, it is possible to continue the discharging even when Vth is positive voltage. That is, compensation can be performed even in the case where Vth variation occurs from positive voltage to negative voltage.

公开(公告)号：US11960185B2

公开(公告)日：2024-04-16

申请号：US17041599

申请日：2019-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kouhei Toyotaka ,  Satoshi Yoshimoto ,  Kazunori Watanabe ,  Susumu Kawashima ,  Kei Takahashi

IPC: G09G3/30 ,  G02F1/1362 ,  G09G3/12 ,  G09G3/32 ,  G09G3/36 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G09G3/32 ,  G09G3/3648 ,  G02F1/1368 ,  G09G2300/0842 ,  G09G2310/0202 ,  G09G2310/04 ,  G09G2320/103 ,  G09G2330/021

Abstract: Display data of pixels is updated at different timings. A scan line is connected to a first pixel and a second pixel, a first wiring is connected to the first pixel, and a second wiring is connected to the second pixel. In a first period, a signal for selecting the first pixel and the second pixel is supplied to the scan line. Setting data for setting a state where the display data of the first pixel is updated is supplied to the first wiring, and setting data for setting a state where the display data of the second pixel is updated is supplied to the second wiring. In a second period, a signal for selecting the first pixel and the second pixel is supplied to the scan line. Setting data for setting a state where the display data of the first pixel is not updated is supplied to the first wiring, and the setting data for setting the state where the display data of the second pixel is updated is supplied to the second wiring. In a third period, the first pixel displays first display data, and the second pixel displays second display data.

公开(公告)号：US12080095B2

公开(公告)日：2024-09-03

申请号：US17639632

申请日：2020-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Kazunori Watanabe ,  Koji Kusunoki ,  Satoshi Yoshimoto

IPC: G06V40/13 ,  G06F3/041 ,  G06V40/12 ,  H04N25/75

CPC classification number: G06V40/1365 ,  G06F3/0412 ,  G06V40/1318 ,  H04N25/75

Abstract: To provide an imaging device having a function of biometric authentication and a function of a touch sensor or a near touch sensor. The imaging device includes pixels, current mirror circuits, and CDS circuits. The pixels, the current mirror circuits, and the CDS circuits are electrically connected to read lines. The current mirror circuit includes a first and a second transistor. One of a source and a drain of the first transistor is electrically connected to the read line, and a power supply potential is supplied to the other of a source and a drain of the second transistor. The imaging device outputs imaging data written to the pixel, as a first signal, to the read line in a first period, and then, resets the imaging data and outputs a second signal from the pixel to the read line in a second period. In the first period, a first potential is supplied to terminals, and in the second period, a second potential is supplied to terminals. A difference between the second potential and the power supply potential is greater than a difference between the first potential and the power supply potential.

公开(公告)号：US12040333B2

公开(公告)日：2024-07-16

申请号：US18022329

申请日：2021-08-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Yoshimoto ,  Koji Kusunoki ,  Kazunori Watanabe ,  Susumu Kawashima ,  Marina Hiyama ,  Motoharu Saito

IPC: G09G3/20 ,  H01L27/12

CPC classification number: H01L27/1248 ,  G09G3/20 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2330/021

Abstract: A highly functional semiconductor device is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first gate electrode, a first electrode, and a second electrode. The second transistor includes a second semiconductor layer, a second gate electrode, a third electrode, and a fourth electrode. The first gate electrode and the second gate electrode are connected to each other, and the second electrode and the third electrode are connected to each other. A first insulating layer, a second insulating layer, and a second semiconductor layer are stacked over the first semiconductor layer. The first insulating layer is less likely to diffuse hydrogen than the second insulating layer. The second insulating layer contains oxide, the first semiconductor layer contains polycrystalline silicon, and the second semiconductor layer contains a metal oxide. The first transistor is a p-channel transistor and the second transistor is an n-channel transistor.

公开(公告)号：US12001634B2

公开(公告)日：2024-06-04

申请号：US17919659

申请日：2021-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Yoshimoto ,  Kazunori Watanabe ,  Susumu Kawashima ,  Ryo Yamauchi ,  Motoharu Saito ,  Koji Kusunoki ,  Shunpei Yamazaki

IPC: G06F3/042 ,  G06T7/20 ,  G09G3/3233

CPC classification number: G06F3/042 ,  G06T7/20 ,  G09G3/3233 ,  G06T2207/20081 ,  G09G2300/08 ,  G09G2310/08 ,  G09G2330/023

Abstract: A display apparatus capable of performing authentication in a short time is provided. The display apparatus includes a first display portion where first pixels are arranged in a matrix, a second display portion where second pixels are arranged in a matrix, first and second row driver circuits, and a control circuit. Each of the first and the second pixels includes a light-receiving element. The first and the second pixels each have a function of acquiring imaging data by using the light-receiving element. The first and the second row driver circuits each have a function of selecting the first and the second pixels which read out the imaging data. The control circuit has a function of sequentially driving the first and the second row driver circuits in a first mode, and has a function of driving one of the first and the second row driver circuits on the basis of the imaging data in the second mode. Each of the scan rates of the first and the second row driver circuits in the first mode is higher than the scan rate of the first or the second row driver circuit in the second mode.

公开(公告)号：US12069876B2

公开(公告)日：2024-08-20

申请号：US18546685

申请日：2022-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji Kusunoki ,  Kazunori Watanabe ,  Tomoaki Atsumi ,  Satoshi Yoshimoto

IPC: G02F1/1333 ,  G06F3/042 ,  G06V40/13 ,  G09G3/3233 ,  H10K39/34 ,  H10K59/131

CPC classification number: H10K39/34 ,  G06F3/042 ,  G06V40/1318 ,  G09G3/3233 ,  H10K59/131 ,  G06F2203/04108 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2354/00 ,  G09G2360/14

Abstract: A semiconductor device having a light sensing function and including a high-resolution display portion is provided. The semiconductor device includes a plurality of pixels, and the pixels each include first and second light-receiving devices, first to fifth transistors, a capacitor, and a first wiring. One electrode of the first light-receiving device is electrically connected to the first wiring, and the other electrode is electrically connected to one of a source and a drain of the first transistor. One electrode of the second light-receiving device is electrically connected to the first wiring, and the other electrode is electrically connected to one of a source and a drain of the second transistor. The other of the source and the drain of the second transistor is electrically connected to the other of the source and the drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to one electrode of the capacitor, one of a source and a drain of the third transistor, and a gate of the fourth transistor.

公开(公告)号：US11741209B2

公开(公告)日：2023-08-29

申请号：US17623294

申请日：2020-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Yoshimoto ,  Susumu Kawashima ,  Koji Kusunoki ,  Kazunori Watanabe

IPC: G06F3/041 ,  G06F21/32 ,  G06V40/13

CPC classification number: G06F21/32 ,  G06F3/0412 ,  G06F3/04164 ,  G06V40/1318

Abstract: A semiconductor device including a biometric recognition function and a touch sensor or near touch sensor function is provided. The semiconductor device includes a light-emitting device and an imaging device. The imaging device includes a gate driver circuit and m rows of pixels (m is an integer more than or equal to 2). The gate driver circuit includes a plurality of first register circuits and second register circuits whose number is less than that of the first register circuits. The first register circuits are connected with each other in series and the second register circuits are connected with each other in series. The gate driver circuit has a function of operating in the first mode and the second mode. In the first mode, the first register circuits are in the on state and the second register circuits are in the off state, and in the second mode, the second register circuits are in the on state and the first register circuits are in the off state.

公开(公告)号：US12142215B2

公开(公告)日：2024-11-12

申请号：US18279110

申请日：2022-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi Yoshimoto ,  Susumu Kawashima ,  Kazunori Watanabe ,  Tomoaki Atsumi ,  Koji Kusunoki

IPC: G09G3/3233 ,  H10K59/35

Abstract: Provided is a highly reliable semiconductor device. The present invention relates to a shift register circuit including a plurality of stages of sequential circuits. An output signal of a sequential circuit is input to a sequential circuit in the subsequent stage. Before a sequential circuit outputs a signal and after the sequential circuit outputs the signal, the potential of a gate of a transistor included in the sequential circuit is changed in accordance with a clock signal so as to avoid voltage stress application between the gate and a source of the transistor for a long time. The shift register circuit can be applied to a scan line driver circuit of a display apparatus, for example.

公开(公告)号：US12080165B2

公开(公告)日：2024-09-03

申请号：US17286093

申请日：2019-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Koji Kusunoki ,  Susumu Kawashima ,  Kazunori Watanabe ,  Satoshi Yoshimoto

IPC: G08G1/0967 ,  G01C21/34 ,  G02F1/1334 ,  G02F1/1337 ,  G09G3/36

CPC classification number: G08G1/096775 ,  G01C21/34 ,  G02F1/1334 ,  G02F1/1337 ,  G09G3/36 ,  G09G2300/0426 ,  G09G2320/0247 ,  G09G2380/10

Abstract: A novel information processing device that is highly convenient or reliable is provided. The information processing device includes a sensor portion, a communication portion, a display portion, and an arithmetic device; the sensor portion has a function of obtaining position information, and the communication portion has a function of obtaining map information and legal speed limit information. The arithmetic device identifies first legal speed limit information from the map information on the basis of the position information, the arithmetic device generates first image information including the first legal speed limit information, and the display portion has a function of displaying the first image information.