公开(公告)号：US20150255562A1

公开(公告)日：2015-09-10

申请号：US14719762

申请日：2015-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Setsuo NAKAJIMA ,  Yasuyuki ARAI

IPC: H01L29/51 ,  H01L29/786

CPC classification number: H01L29/511 ,  G02F1/1345 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78669

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.