公开(公告)号：US20160336051A1

公开(公告)日：2016-11-17

申请号：US15220469

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shuhei NAGATSUKA ,  Yasuyuki TAKAHASHI

IPC: G11C7/22 ,  H01L27/105 ,  H01L29/786 ,  H01L27/12 ,  G11C8/10 ,  G11C5/06

CPC classification number: G11C7/22 ,  G11C5/06 ,  G11C8/10 ,  G11C11/404 ,  G11C16/02 ,  H01L27/1052 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor storage device with a novel structure, which can retain stored data even when power is not supplied (i.e., is non-volatile) and has no limitation on the number of write cycles. The semiconductor storage device includes a memory cell array in which a plurality of memory cells are arranged in matrix, a decoder configured to select a memory cell to operate among the plurality of memory cells in accordance with a control signal, and a control circuit configured to select whether to output the control signal to the decoder. In each of the plurality of memory cells, data is held by turning off a selection transistor whose channel region is formed with an oxide semiconductor.

Abstract translation: 具有新颖结构的半导体存储装置，即使在未提供电力（即非易失性）的情况下也可以保留存储的数据，并且对写入周期的数量没有限制。 半导体存储装置包括存储单元阵列，其中多个存储单元以矩阵形式排列;解码器，被配置为根据控制信号选择存储单元在多个存储单元之间进行操作;以及控制电路， 选择是否将控制信号输出到解码器。 在多个存储单元的每一个中，通过关闭其沟道区域形成有氧化物半导体的选择晶体管来保持数据。