公开(公告)号：US20170271421A1

公开(公告)日：2017-09-21

申请号：US15456887

申请日：2017-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro JINBO ,  Kohei YOKOYAMA ,  Yuki TAMATSUKURI ,  Naoto GOTO ,  Masami JINTYOU ,  Masayoshi DOBASHI ,  Masataka NAKADA ,  Akihiro CHIDA ,  Naoyuki SENDA

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US20180247990A1

公开(公告)日：2018-08-30

申请号：US15966640

申请日：2018-04-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro JINBO ,  Kohei YOKOYAMA ,  Yuki TAMATSUKURI ,  Naoto GOTO ,  Masami JINTYOU ,  Masayoshi DOBASHI ,  Masataka NAKADA ,  Akihiro CHIDA ,  Naoyuki SENDA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US20210151486A1

公开(公告)日：2021-05-20

申请号：US16628073

申请日：2018-07-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidetomo KOBAYASHI ,  Yuki TAMATSUKURI ,  Naoto KUSUMOTO

IPC: H01L27/146

Abstract: An imaging device capable of executing image processing is provided.
A structure is employed in which a photoelectric conversion element, a first transistor, a second transistor, and an inverter circuit are included; one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; the one of the source and the drain of the second transistor is electrically connected to an input terminal of the inverter circuit; and data obtained by photoelectric conversion is binarized and output.

公开(公告)号：US20220216254A1

公开(公告)日：2022-07-07

申请号：US17705479

申请日：2022-03-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidetomo KOBAYASHI ,  Yuki TAMATSUKURI ,  Naoto KUSUMOTO

IPC: H01L27/146

Abstract: An imaging device capable of executing image processing is provided. A structure is employed in which a photoelectric conversion element, a first transistor, a second transistor, and an inverter circuit are included; one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; the one of the source and the drain of the second transistor is electrically connected to an input terminal of the inverter circuit; and data obtained by photoelectric conversion is binarized and output.

公开(公告)号：US20200242730A1

公开(公告)日：2020-07-30

申请号：US16636705

申请日：2018-08-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka SHIOKAWA ,  Yuki TAMATSUKURI

IPC: G06T3/40 ,  H04N7/01

Abstract: A semiconductor device which performs upconversion without a large amount of learning data is provided. The semiconductor device increasing the resolution of a first image data to generate a high-resolution image data. It includes the first step of generating a second image data by decreasing the resolution of the first image data, the second step of generating a third image data having a higher resolution than the second image data by inputting the second image data to a neural network, the third step of calculating an error for the third image data relative to the first image data by their comparison, and the fourth step of modifying a weight coefficient of the neural network on the basis of the error; and then the high resolution image data is generated by inputting the first image data into the neural network after a prescribed number of the second to fourth steps.