公开(公告)号：US09640446B2

公开(公告)日：2017-05-02

申请号：US14947673

申请日：2015-11-20

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Huayong Hu ,  Lihua Ding ,  Weiming He

IPC分类号： H01L21/4763 ,  H01L21/66 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033 ,  G03F9/00 ,  H01L23/544

CPC分类号： H01L22/12 ,  G03F9/7034 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31144 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor structure is provided. The method includes providing a semiconductor substrate; and forming a plurality of semiconductor devices on the semiconductor substrate. The method also includes forming a dielectric layer covering the plurality of the semiconductor devices on the semiconductor substrate; and forming an optical auxiliary layer configured to reflect a portion of a levelness-detecting light and absorb a portion of the levelness detecting light transmitting through the optical auxiliary layer during a levelness-detecting process over the dielectric layer. Further, the method includes forming a photoresist layer over the optical auxiliary layer; and detecting a levelness of the semiconductor substrate and exposing the photoresist layer to form a patterned photoresist layer.

公开(公告)号：US11189495B2

公开(公告)日：2021-11-30

申请号：US17036205

申请日：2020-09-29

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Yafeng Qian ,  Ying Li ,  Lihua Ding ,  Jiaxi Li ,  Wendong Liu

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/20

摘要： A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a to-be-etched layer including a first region; forming a first pattern material layer on the to-be-etched layer; forming a sacrificial layer on the first pattern material layer; forming a first opening in the sacrificial layer over the first region, where the first opening exposes a first portion of the first pattern material layer; forming a first doped region in the first pattern material layer using the sacrificial layer as a mask; forming a second opening in the sacrificial layer over the first region, where the second opening exposes a second portion of the first pattern material layer; and forming a second doped region in the first pattern material layer using the sacrificial layer as a mask, where the second doped region is connected with the first doped region.