公开(公告)号：US20040040857A1

公开(公告)日：2004-03-04

申请号：US10448982

申请日：2003-05-31

Applicant: Semitool, Inc.

Inventor： Lin Lin Chen ,  Thomas Taylor

IPC: C25D005/02

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract translation: 阐述了将金属化互连结构应用于具有沉积在其表面上的阻挡层的半导体工件的方法。 该方法包括在阻挡层上形成超薄金属种子层。 超薄种子层具有小于或等于约500埃的厚度。 然后通过在其上沉积附加金属以提供增强的种子层来增强超薄籽晶层。 增强的种子层在分布在工件内的基本上所有凹陷特征的侧壁上的所有点处具有等于或大于在工件的外部设置表面上的标称种子层厚度的约10％的厚度。