摘要:
The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
摘要:
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要:
A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
摘要:
The electrostatic chuck comprises a chuck base for supporting a wafer, a dielectric film mounted on the chuck base, the dielectric film having an electrode for supplying direct current voltage to provide an electrostatic force to fix the wafer, the electrode disposed in the dielectric film, and a cooling channel for supplying refrigerant to the dielectric film to control the temperature of the wafer. At least two first cooling channel parts are formed at the surface of the dielectric film corresponding to the edge part of the wafer such that the first cooling channel parts form concentric circles, second cooling channel parts formed at the surface of the dielectric film such that the first cooling channel parts are connected to each other through the second cooling channel parts, first through channels formed through the dielectric film for supplying the refrigerant to the first and second cooling channel parts, and a second through channel formed through the center of the dielectric film for supplying the refrigerant to the center of the wafer.
摘要:
Provided is a novel triethyleneglycol based compound, a plasticizer composition for polyvinyl chloride resin including the same, and a method of preparing the plasticizer composition. In particular, the plasticizer composition for polyvinyl chloride resin includes the novel compound, 2-(2-(2-(2-ethylhexanoyloxy)ethoxy)ethoxy)ethyl 2-ethylhexanoate, and 2-(2-(2-phenylcarbonyloxyethoxy)ethoxy)ethyl benzoate in a proper mixture ratio. A polyvinyl chloride prepared using the plasticizer composition has low heating loss, excellent adhesion, high plasticization efficiency, high elongation, high tensile strength, and high transparency.
摘要:
Disclosed herein is a washing apparatus in which the top of a base pan is inclined downward toward a mounting position of a water leakage sensor, so that water, dropped onto the base pan, is gathered toward the water leakage sensor regardless of a water drop position, thereby enabling prompt operation of the water leakage sensor and achieving an enhancement in reliability. Furthermore, the washing apparatus comprises holders by which the water leakage sensor is vertically caught after being vertically press fitted to the base pan, thereby enabling the water leakage sensor to be mounted to the base pan via a single vertical press-fitting operation, resulting in an enhancement in assembling efficiency.
摘要:
In an UDDI web service registry system based on an ebXML registry, a first client system supports a web service based on an UDDI protocol and transceives an UDDI message. An UDDI registry processes a service request of the UDDI message. A second client system supports a web service based on an ebXML protocol and transceives an ebXML message. An ebXML registry processes service requests of the compatible ebXML message. An UDDI service module transforms the UDDI message into a compatible ebXML message and transmits the ebXML message to the ebXML registry.