公开(公告)号：US20100254270A1

公开(公告)日：2010-10-07

申请号：US12735075

申请日：2008-07-11

申请人： Seok-Jin Lee ,  Ki Seok Kim ,  Young-II Kim

发明人： Seok-Jin Lee ,  Ki Seok Kim ,  Young-II Kim

IPC分类号： H04L12/26

CPC分类号： G06F13/1689

摘要： A signal transmitting apparatus includes: a plurality of data transmission lines that transmit output data to a memory; a plurality of delay units that are correspondingly connected to the plurality of data transmission lines, that delay test data according to a delay signal for a predetermined time, and that output the delayed test data to each of the data transmission lines; and a transmitting/receiving controller that compares the stored data in the memory with the test data to adjust the delay signal, and that outputs the adjusted delay signal to each of the plurality of delay units. With this configuration, when data is transmitted to a memory through a data bus, a delay value can be adjusted among a plurality of signal lines constituting a data bus, and thus signal transmission can be performed uniformly.

摘要翻译： 信号发送装置包括：将输出数据发送到存储器的多条数据传输线; 多个延迟单元，其相应​​地连接到所述多个数据传输线，其根据延迟信号将测试数据延迟预定时间，并且将延迟的测试数据输出到每个数据传输线; 以及发送/接收控制器，其将存储器中存储的数据与测试数据进行比较，以调整延迟信号，并将经调整的延迟信号输出到多个延迟单元中的每一个。 利用这种配置，当通过数据总线将数据发送到存储器时，可以在构成数据总线的多个信号线之间调整延迟值，从而可以均匀地执行信号传输。

公开(公告)号：US08451738B2

公开(公告)日：2013-05-28

申请号：US12735075

申请日：2008-07-11

申请人： Seok-Jin Lee ,  Ki Seok Kim ,  Young-Il Kim

发明人： Seok-Jin Lee ,  Ki Seok Kim ,  Young-Il Kim

IPC分类号： H04L12/26

CPC分类号： G06F13/1689

摘要： A signal transmitting apparatus includes: a plurality of data transmission lines that transmit output data to a memory; a plurality of delay units that are correspondingly connected to the plurality of data transmission lines, that delay test data according to a delay signal for a predetermined time, and that output the delayed test data to each of the data transmission lines; and a transmitting/receiving controller that compares the stored data in the memory with the test data to adjust the delay signal, and that outputs the adjusted delay signal to each of the plurality of delay units. With this configuration, when data is transmitted to a memory through a data bus, a delay value can be adjusted among a plurality of signal lines constituting a data bus, and thus signal transmission can be performed uniformly.

摘要翻译： 信号发送装置包括：将输出数据发送到存储器的多条数据传输线; 多个延迟单元，其相应​​地连接到所述多个数据传输线，其根据延迟信号将测试数据延迟预定时间，并且将延迟的测试数据输出到每个数据传输线; 以及发送/接收控制器，其将存储器中存储的数据与测试数据进行比较，以调整延迟信号，并将经调整的延迟信号输出到多个延迟单元中的每一个。 利用这种配置，当通过数据总线将数据发送到存储器时，可以在构成数据总线的多个信号线之间调整延迟值，从而可以均匀地执行信号传输。

公开(公告)号：US07920826B2

公开(公告)日：2011-04-05

申请号：US11930514

申请日：2007-10-31

申请人： Ki Seok Kim ,  Seok Jin Lee ,  Young Il Kim

发明人： Ki Seok Kim ,  Seok Jin Lee ,  Young Il Kim

IPC分类号： H04B7/14

CPC分类号： H04B7/2606 ,  H04B7/155

摘要： A method of forming a frame in a Mobile Multi-hop Relay (MMR) system, and a system for implementing the method are provided. In a multi-hop relay system, when a relay station of a specific layer receives data, the relay station receives data from both a higher layer and a lower layer. When the relay station transmits data, the relay station transmits data to both the higher layer and the lower layer. By doing so, data reception and data transmission are exclusively performed without interfering with each other, and the method and the system are easily applied to the multi-hop MMR system.

摘要翻译： 提供了一种在移动多跳中继（MMR）系统中形成帧的方法以及用于实现该方法的系统。 在多跳中继系统中，当特定层的中继站接收数据时，中继站从较高层和下层接收数据。 当中继站发送数据时，中继站向上层和下层发送数据。 通过这样做，数据接收和数据传输被排他地执行，而不会彼此干扰，并且该方法和系统容易地应用于多跳MMR系统。

公开(公告)号：US10177279B2

公开(公告)日：2019-01-08

申请号：US15608141

申请日：2017-05-30

申请人： Tae Yeon Seong ,  Ki Seok Kim ,  Junyong Jin

发明人： Tae Yeon Seong ,  Ki Seok Kim ,  Junyong Jin

IPC分类号： H01L33/10 ,  H01L33/38 ,  H01L33/24

摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

公开(公告)号：US08877542B2

公开(公告)日：2014-11-04

申请号：US13325505

申请日：2011-12-14

申请人： Gun Young Jung ,  Hui Song ,  Ki Seok Kim

发明人： Gun Young Jung ,  Hui Song ,  Ki Seok Kim

IPC分类号： H01L31/18 ,  H01M14/00 ,  H01G9/20

CPC分类号： H01M14/005 ,  H01G9/2031 ,  H01G9/2036 ,  H01G9/204 ,  Y02E10/542

摘要： Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.

摘要翻译： 公开了纳米结构阵列基板，其制造方法和使用该染料敏化太阳能电池的染料敏化太阳能电池。 纳米结构阵列衬底包括在衬底上垂直对准的多个金属氧化物纳米结构，同时彼此分离。 金属氧化物纳米结构包括具有ZnO核/ TiO 2壳结构或TiO 2纳米管的纳米棒。 该方法包括以下步骤：从形成在衬底上的晶种层垂直取向的ZnO纳米棒; 并在ZnO纳米棒上涂覆TiO 2溶胶并烧结ZnO纳米棒以形成具有ZnO核/ TiO2壳结构的纳米棒。 确保了基材的透明性和柔韧性。 如果在染料敏化太阳能电池的光电极中使用纳米结构阵列基板，则太阳能电池的光电转换效率得到改善。

公开(公告)号：US10403791B2

公开(公告)日：2019-09-03

申请号：US15629051

申请日：2017-06-21

申请人： Tae Yeon Seong ,  Ki Seok Kim ,  Sung-joo Song

发明人： Tae Yeon Seong ,  Ki Seok Kim ,  Sung-joo Song

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/02 ,  H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L33/20 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42 ,  H01L33/38

摘要： A vertical light-emitting diode device and a method of fabricating the same are provided. The device may include a conductive substrate serving as a p electrode, a p-type GaN layer provided on the conductive substrate, an active layer provided on the p-type GaN layer, an n-type GaN layer provided on the active layer, an n electrode pattern provided on the n-type GaN layer, a metal oxide structure filling a plurality of holes formed in the n-type GaN layer, and a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.

公开(公告)号：US10181550B2

公开(公告)日：2019-01-15

申请号：US15628195

申请日：2017-06-20

申请人： Tae Yeon Seong ,  Ki Seok Kim ,  Hwan Kyo Kim ,  Dae-Hyun Kim

发明人： Tae Yeon Seong ,  Ki Seok Kim ,  Hwan Kyo Kim ,  Dae-Hyun Kim

IPC分类号： H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20

摘要： A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.

公开(公告)号：US09978911B2

公开(公告)日：2018-05-22

申请号：US15608626

申请日：2017-05-30

申请人： Tae Yeon Seong ,  Jee-Yun Lee ,  Dae-Hyun Kim ,  Ki Seok Kim

发明人： Tae Yeon Seong ,  Jee-Yun Lee ,  Dae-Hyun Kim ,  Ki Seok Kim

IPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/14 ,  H01L33/32

CPC分类号： H01L33/42 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32

摘要： Provided is a GaN light-emitting diode (LED) device. The LED device may include a substrate, an n-type GaN layer on the substrate, an active layer on the n-type GaN layer, a p-type GaN layer on the active layer, a current spreading layer including a transparent conductive metal oxide material on the p-type GaN layer, a plurality of upper current injection electrodes provided on the current spreading layer to be spaced apart from each other, an upper electrode pattern extending to cover the upper current injection electrodes, and an upper electrode pad electrically connected to the upper electrode pattern. The upper electrode pattern may include first and second upper electrode patterns, which are sequentially stacked and are a silver or silver alloy thin layer and a transparent conductive metal oxide thin layer, respectively.

公开(公告)号：US20120305069A1

公开(公告)日：2012-12-06

申请号：US13484695

申请日：2012-05-31

申请人： Ki Seok Kim ,  Sang Hoon Nam ,  Hui Su Jeong ,  Hui Song ,  Sang-Mook Kim ,  Won Bae Kim ,  Gun-Young Jung

发明人： Ki Seok Kim ,  Sang Hoon Nam ,  Hui Su Jeong ,  Hui Song ,  Sang-Mook Kim ,  Won Bae Kim ,  Gun-Young Jung

IPC分类号： H01L31/0224 ,  H01L31/0264 ,  B82Y99/00

CPC分类号： B82Y30/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01G9/2036 ,  H01G9/2059 ,  Y02E10/542

摘要： Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.

摘要翻译： 提供了包括氧化锌半球的光电极，其制造方法和使用其的染料敏化太阳能电池。 光电极包括导电基板，设置在导电基板上的氧化锌半球，以及覆盖氧化锌半球的多孔金属氧化物层。 可以增加光电极的光散射效应，并且可以最小化电子的复合损耗以改善光伏特性。

公开(公告)号：US06487191B1

公开(公告)日：2002-11-26

申请号：US09187778

申请日：1998-11-06

申请人： Chang Soon Kang ,  Seon Shim Cheon ,  Ki Seok Kim ,  Cheol Hye Cho

发明人： Chang Soon Kang ,  Seon Shim Cheon ,  Ki Seok Kim ,  Cheol Hye Cho

IPC分类号： H04J1300

CPC分类号： H04W52/143 ,  H04W36/18 ,  H04W52/24 ,  H04W52/40 ,  H04W52/52

摘要： The present invention relates to a power control method for forward links in the CDMA cellular mobile communication system and a structure of a mobile station and a base station for the control. The power control method for forward links and a structure of a base station and a mobile station for the control in the CDMA cellular mobile communication system is presented which can increase forward link capacity as a mobile station measures signals of forward traffic channels from base stations in soft handoff and requests power increase/decrease divided for each corresponding base station and the base station adjusts transmit power of corresponding traffic channels depending on the forward link state.

摘要翻译： 本发明涉及CDMA蜂窝移动通信系统中的前向链路的功率控制方法以及用于控制的移动站和基站的结构。 提出了用于CDMA蜂窝移动通信系统中的用于前向链路的功率控制方法和用于基站的移动站的基站和移动站的结构，当移动站测量来自基站的前向业务信道的信号时，可以增加前向链路容量 软切换并请求每个相应基站的功率增加/减少，基站根据前向链路状态来调整相应业务信道的发射功率。