公开(公告)号：US07476868B2

公开(公告)日：2009-01-13

申请号：US11453075

申请日：2006-06-15

申请人： Seong Gu Kim ,  Jai Kwang Shin ,  Jae Joon Oh

发明人： Seong Gu Kim ,  Jai Kwang Shin ,  Jae Joon Oh

IPC分类号： H01J37/08 ,  H01J37/30

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J27/08 ,  H01J37/3171

摘要： An ion generator of an ion implanter, the ion generator includes: an arc chamber provided with a slit for ion extraction and forming an equipotential surface with a first voltage; a filament installed inside of the arc chamber, heated to a predetermined temperature and generating electrons; magnetic field devices provided outside of the arc chamber and supplied with a current from a current source and generating a magnetic field in the arc chamber; a gas discharge device injecting a predetermined gas into the arc chamber; and an electrode positioned opposite to the slit and supplied with a second voltage having a high voltage than the first voltage from a voltage source and generating a magnetic field in the arc chamber.

摘要翻译： 离子注入机的离子发生器，所述离子发生器包括：电弧室，设置有用于离子提取的狭缝并形成具有第一电压的等电位面; 安装在电弧室内的灯丝，加热到预定温度并产生电子; 磁场装置设置在电弧室外部，并从电流源提供电流并在电弧室中产生磁场; 将预定气体注入到电弧室中的气体放电装置; 以及电极，与所述狭缝相对设置，并且从电压源提供具有比所述第一电压高的电压的第二电压并在所述电弧室中产生磁场。

公开(公告)号：US20070152165A1

公开(公告)日：2007-07-05

申请号：US11453075

申请日：2006-06-15

申请人： Seong Gu Kim ,  Jai Kwang Shin ,  Jae Joon Oh

发明人： Seong Gu Kim ,  Jai Kwang Shin ,  Jae Joon Oh

IPC分类号： H01J27/00

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J27/08 ,  H01J37/3171

摘要： An ion generator of an ion implanter, the ion generator includes: an arc chamber provided with a slit for ion extraction and forming an equipotential surface with a first voltage; a filament installed inside of the arc chamber, heated to a predetermined temperature and generating electrons; magnetic field devices provided outside of the arc chamber and supplied with a current from a current source and generating a magnetic field in the arc chamber; a gas discharge device injecting a predetermined gas into the arc chamber; and an electrode positioned opposite to the slit and supplied with a second voltage having a high voltage than the first voltage from a voltage source and generating a magnetic field in the arc chamber.

摘要翻译： 离子注入机的离子发生器，所述离子发生器包括：电弧室，设置有用于离子提取的狭缝并形成具有第一电压的等电位面; 安装在电弧室内的灯丝，加热到预定温度并产生电子; 磁场装置设置在电弧室外部，并从电流源提供电流并在电弧室中产生磁场; 将预定气体注入到电弧室中的气体放电装置; 以及电极，与所述狭缝相对设置，并且从电压源提供具有比所述第一电压高的电压的第二电压并在所述电弧室中产生磁场。

公开(公告)号：US07936028B2

公开(公告)日：2011-05-03

申请号：US12081283

申请日：2008-04-14

申请人： Ki-ha Hong ,  Sung-hoon Lee ,  Jong-seob Kim ,  Jai Kwang Shin

发明人： Ki-ha Hong ,  Sung-hoon Lee ,  Jong-seob Kim ,  Jai Kwang Shin

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F1/404 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3295 ,  H01L29/82

摘要： A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO2), magnetite (Fe3O4), a double perovskite structure material, a Heusler alloy, NiMnSb, La(1-x)AxMnO3 (A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of A2BB′O6, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

摘要翻译： 自旋场效应晶体管可以包括在基板上彼此分离的至少一个栅电极，沟道层，第一堆叠和第二堆叠，其中沟道层由半金属形成。 半金属可以是选自氧化铬（CrO 2），磁铁矿（Fe 3 O 4），双钙钛矿结构材料，Heusler合金，NiMnSb，La（1-x）AxMnO 3（A = Ca， Ba，Sr，x〜0.3）和掺杂有Cu的GaN，双钙钛矿结构材料表示为A2BB'O6的化学组成，对应于A的材料为Ca，Sr或Ba，相当于 B是3d轨道过渡金属，对应于B'的材料是4d轨道过渡金属。 3d轨道过渡金属可以是Fe或Co，4d轨道过渡金属是Mo或Re。