公开(公告)号：US20140110666A1

公开(公告)日：2014-04-24

申请号：US14126638

申请日：2012-06-15

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duck II Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/06

CPC classification number: H01L33/24 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L2933/0091

Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.

Abstract translation: 本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。 半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面 形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。 在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

公开(公告)号：US20160079474A1

公开(公告)日：2016-03-17

申请号：US14952641

申请日：2015-11-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duck II Suh ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Ji Hye Kim

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/22

CPC classification number: H01L33/24 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L2933/0091

Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.

Abstract translation: 本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。 半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面 形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。 在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。