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公开(公告)号:US20140117395A1
公开(公告)日:2014-05-01
申请号:US14067455
申请日:2013-10-30
Applicant: Seoul Viosys Co., Ltd.
Inventor: Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seoul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
Abstract translation: 提供一种发光二极管(LED)及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层,有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。
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公开(公告)号:US20170200857A1
公开(公告)日:2017-07-13
申请号:US15469253
申请日:2017-03-24
Applicant: Seoul Viosys Co., Ltd.
Inventor: Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
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公开(公告)号:US20150311390A1
公开(公告)日:2015-10-29
申请号:US14795167
申请日:2015-07-09
Applicant: Seoul Viosys Co., Ltd.
Inventor: Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
Abstract translation: 一种制造发光二极管(LED)的方法包括:在衬底上依次堆叠第一导电类型半导体层,有源层和第二导电类型半导体层; 并将基板分离为单元芯片,同时在单元芯片的侧面形成具有不规则垂直线形状的凹凸结构。
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