摘要:
A non-volatile memory organized into flash erasable blocks sorts units of data according to a temperature assigned to each unit of data, where a higher temperature indicates a higher probability that the unit of data will suffer subsequent rewrites due to garbage collection operations. The units of data either come from a host write or from a relocation operation. Among the units more likely to suffer subsequent rewrites, a smaller subset of data super-hot is determined. These super-hot data are then maintained in a dedicated portion of the memory, such as a resident binary zone in a memory system with both binary and MLC portions.
摘要:
A non-volatile memory organized into flash erasable blocks sorts units of data according to a temperature assigned to each unit of data, where a higher temperature indicates a higher probability that the unit of data will suffer subsequent rewrites due to garbage collection operations. The units of data either come from a host write or from a relocation operation. Among the units more likely to suffer subsequent rewrites, a smaller subset of data super-hot is determined. These super-hot data are then maintained in a dedicated portion of the memory, such as a resident binary zone in a memory system with both binary and MLC portions.
摘要:
A non-volatile memory organized into flash erasable blocks sorts units of data according to a temperature assigned to each unit of data, where a higher temperature indicates a higher probability that the unit of data will suffer subsequent rewrites due to garbage collection operations. The units of data either come from a host write or from a relocation operation. The data are sorted either for storing into different storage portions, such as SLC and MLC, or into different operating streams, depending on their temperatures. This allows data of similar temperature to be dealt with in a manner appropriate for its temperature in order to minimize rewrites. Examples of a unit of data include a logical group and a block.
摘要:
In a nonvolatile memory with a block management system, data written to blocks include host write data and also system control data for managing the blocks. When a block is full or no longer accepting data, it is closed after valid versions of the data on it are relocated to another block in a rewrite operation. An improved pre-emptive rewrite scheme prevents a worst-case situation where multiple rewrites to occur at once when they happened to be full at the same time. Particularly, the scheduling of the pre-emptive rewrites for control data is based on a number of considerations including the time required for each control block rewrite and the time available for control block rewrites based on the configuration of the update blocks for storing host data, the time required in the foreground host operation and the host write latency.
摘要:
A non-volatile memory organized into flash erasable blocks sorts units of data according to a temperature assigned to each unit of data, where a higher temperature indicates a higher probability that the unit of data will suffer subsequent rewrites due to garbage collection operations. The units of data either come from a host write or from a relocation operation. The data are sorted either for storing into different storage portions, such as SLC and MLC, or into different operating streams, depending on their temperatures. This allows data of similar temperature to be dealt with in a manner appropriate for its temperature in order to minimize rewrites. Examples of a unit of data include a logical group and a block.
摘要:
In a nonvolatile memory with a block management system, data written to blocks include host write data and also system control data for managing the blocks. When a block is full or no longer accepting data, it is closed after valid versions of the data on it are relocated to another block in a rewrite operation. An improved pre-emptive rewrite scheme prevents a worst-case situation where multiple rewrites to occur at once when they happened to be full at the same time. Particularly, the scheduling of the pre-emptive rewrites for control data is based on a number of considerations including the time required for each control block rewrite and the time available for control block rewrites based on the configuration of the update blocks for storing host data, the time required in the foreground host operation and the host write latency.
摘要:
Techniques are presented for performing maintenance operations, such as garbage collection, on non-volatile memory systems will still respecting the maximum latency, or time-out, requirements of a protocol. A safety guard band in the space available for storing host data, control data, or both, is provided. If, on an access of the memory, it is determined that the guard band space is exceeded, the system uses a recovery back to the base state by triggering and prioritizing clean-up operations to re-establish all safety guard bands without breaking the timing requirements. To respect these timing requirements, the operations are split into portions and done in a phased manner during allowed latency periods.
摘要:
A memory system and methods of its operation are presented. The memory system includes a volatile buffer memory and a non-volatile memory circuit, where the non-volatile memory circuit has a first section, where data is stored in a binary format, and a second section, where data is stored in a multi-state format. When writing data to the non-volatile memory, the data is received from a host, stored in the buffer memory, transferred from the buffer memory to into read/write registers of the non-volatile memory circuit, and then written from the read/write registers to the first section of the non-volatile memory circuit using a binary write operation. Portions of the data and then subsequently folded from the first section of the non-volatile memory to the second section of the non-volatile memory, where a folding operation includes reading the portions of the data from multiple locations in the first section into the read/write registers and performing a multi-state programming operation of the potions of the data from the read/write registers into a location the second section of the non-volatile memory. The multi-state programming operations include a first phase and a second phase and one or more of the binary write operations are performed between the phases of the multi-state programming operations.
摘要:
The present invention presents techniques for the linking of physical blocks of a non-volatile memory into composite logical structures or “metablocks”. After determining an initial linking of good physical blocks into metablocks, a record of the linking is maintained in the non-volatile memory where it can be readily accessed when needed. In one set of embodiments, the initially linking is deterministically formed according to an algorithm and can be optimized according to the pattern of any bad blocks in the memory. As additional bad blocks arise, the linking is updated using by replacing the bad blocks in a linking with good blocks, preferably in the same sub-array of the memory as the block that they are replacing.
摘要:
The present invention presents techniques for the linking of physical blocks of a non-volatile memory into composite logical structures or “metablocks”. After determining an initial linking of good physical blocks into metablocks, a record of the linking is maintained in the non-volatile memory where it can be readily accessed when needed. In one set of embodiments, the initially linking is deterministically formed according to an algorithm and can be optimized according to the pattern of any bad blocks in the memory. As additional bad blocks arise, the linking is updated using by replacing the bad blocks in a linking with good blocks, preferably in the same sub-array of the memory as the block that they are replacing.