公开(公告)号：US08211739B2

公开(公告)日：2012-07-03

申请号：US12355098

申请日：2009-01-16

申请人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

发明人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

IPC分类号： H01L21/00

CPC分类号： H01L31/03682 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/035281 ,  Y02E10/546

摘要： Disclosed herein is a polycrystalline silicon solar cell, including: a back electrode formed on a transparent insulating substrate; an N-type polycrystalline silicon layer in which amorphous silicon is crystallized through MIC process, and in which electrons are accumulated; a light-absorbing layer which is formed by vertically crystallizing an intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through MIVC process, in which pairs of electrons and holes are generated in response to incident light, and which has a vertical column grain structure in which grains are arranged in the direction in which electrons and holes move; a P-type polycrystalline silicon layer which has the vertical column grain structure, and in which holes are accumulated; a transparent electrode layer; front electrodes; and an antireflection coating film, and is a method of fabricating the same.

摘要翻译： 这里公开了一种多晶硅太阳能电池，包括：形成在透明绝缘基板上的背面电极; 其中非晶硅通过MIC工艺结晶并且其中电子被积聚的N型多晶硅层; 通过使用多晶硅层作为用于通过MIVC工艺结晶的晶种使本征非晶硅层垂直结晶而形成的光吸收层，其中响应于入射光而产生电子和空穴对，并且具有垂直 晶粒结构，其中晶粒沿电子和空穴移动的方向排列; 具有垂直柱状结构的P型多晶硅层，其中积聚有空穴; 透明电极层; 前电极 和抗反射涂膜，并且是其制造方法。

公开(公告)号：US20090178711A1

公开(公告)日：2009-07-16

申请号：US12355098

申请日：2009-01-16

申请人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

发明人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim ,  Nam Kyu Song

IPC分类号： H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/03682 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/035281 ,  Y02E10/546

摘要： Disclosed herein is a polycrystalline silicon solar cell, including: a back electrode formed on a transparent insulating substrate; an N-type polycrystalline silicon layer in which amorphous silicon is crystallized through MIC process, and in which electrons are accumulated; a light-absorbing layer which is formed by vertically crystallizing an intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through MIVC process, in which pairs of electrons and holes are generated in response to incident light, and which has a vertical column grain structure in which grains are arranged in the direction in which electrons and holes move; a P-type polycrystalline silicon layer which has the vertical column grain structure, and in which holes are accumulated; a transparent electrode layer; front electrodes; and an antireflection coating film, and is a method of fabricating the same.

摘要翻译： 这里公开了一种多晶硅太阳能电池，包括：形成在透明绝缘基板上的背面电极; 其中非晶硅通过MIC工艺结晶并且其中电子被积聚的N型多晶硅层; 通过使用多晶硅层作为用于通过MIVC工艺结晶的晶种使本征非晶硅层垂直结晶而形成的光吸收层，其中响应于入射光而产生电子和空穴对，并且具有垂直 晶粒结构，其中晶粒沿电子和空穴移动的方向排列; 具有垂直柱状结构的P型多晶硅层，其中积聚有空穴; 透明电极层; 前电极 和抗反射涂膜，并且是其制造方法。

公开(公告)号：US08211738B2

公开(公告)日：2012-07-03

申请号：US12355078

申请日：2009-01-16

申请人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim

发明人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim

IPC分类号： H01L21/00

CPC分类号： H01L31/1872 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Disclosed herein is a method of forming a light-absorbing layer of a polycrystalline silicon solar cell, including: forming a polycrystalline silicon layer on a back electrode; forming an intrinsic amorphous silicon layer on the polycrystalline silicon layer; and heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon, and is a method of fabricating a high-efficiency polycrystalline silicon solar cell using the light-absorbing layer.

摘要翻译： 本文公开了形成多晶硅太阳能电池的光吸收层的方法，包括：在背面电极上形成多晶硅层; 在所述多晶硅层上形成本征非晶硅层; 并且通过金属诱导垂直结晶（MIVC）工艺，使用多晶硅层作为结晶晶种，对透明绝缘基板进行热处理，以使本征非晶硅层垂直结晶，从而将本征非晶硅层形成为制成的光吸收层 的多晶硅，并且是使用该光吸收层制造高效多晶硅太阳能电池的方法。