NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAM
    1.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAM 审中-公开
    非易失性存储器件和用于制造SAM的方法

    公开(公告)号:US20090008698A1

    公开(公告)日:2009-01-08

    申请号:US11965454

    申请日:2007-12-27

    摘要: A nonvolatile memory device includes an active region which is defined by an isolation layer formed in a substrate and has a recess therein in a channel width direction, wherein an upper portion of the active region having the recess projects over an upper portion of the isolation layer, a lower insulation layer formed along a surface of the active region and a top surface of the isolation layer, a charge storage layer formed over the lower insulation layer, an upper insulation layer formed over the charge storage layer, and a gate electrode formed over the upper insulation layer.

    摘要翻译: 非易失性存储器件包括有源区,其由形成在衬底中的隔离层限定,并且在沟道宽度方向上具有凹部,其中具有凹部的有源区的上部突出于隔离层的上部 形成在所述有源区的表面上的下绝缘层和所述隔离层的顶面,形成在所述下绝缘层上的电荷存储层,形成在所述电荷存储层上的上绝缘层,以及形成在所述绝缘层上的栅电极 上绝缘层。