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    Methods of operating image sensors
    1.
    发明授权
    Methods of operating image sensors 有权

    公开(公告)号：US10602086B2

    公开(公告)日：2020-03-24

    申请号：US14883453

    申请日：2015-10-14

    申请人： Seung-Hyuk Chang ,  Yoon-Dong Park ,  Yong-Jei Lee

    发明人： Seung-Hyuk Chang ,  Yoon-Dong Park ,  Yong-Jei Lee

    IPC分类号： H04N5/351 ,  H04N5/225 ,  H04N13/254 ,  H04N13/271 ,  G01S7/481 ,  G01S17/06

    摘要： A method of operating a three-dimensional image sensor may include: obtaining position information of an object using light emitted by a light source module, the three-dimensional image sensor including the light source module having a light source and a lens; and adjusting a relative position of the light source to the lens based on the obtained position information of the object. A method of operating an image sensor may include: obtaining position information of an object using light emitted by a light source module, the image sensor including the light source module; and adjusting an emission angle of the light emitted by the light source module based on the obtained position information.

    IMAGE-SENSING DEVICES AND METHODS OF OPERATING THE SAME
    2.
    发明申请
    IMAGE-SENSING DEVICES AND METHODS OF OPERATING THE SAME 有权
    图像感测装置及其操作方法

    公开(公告)号：US20130020463A1

    公开(公告)日：2013-01-24

    申请号：US13550838

    申请日：2012-07-17

    申请人： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

    发明人： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

    IPC分类号： G01J1/44

    CPC分类号： H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/378

    摘要： In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

    摘要翻译： 在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样， 连接的。 基于噪声电压和解调电压确定电压。

    Pixel Circuit, depth sensor having dual operating mode for high and low incident light and operating method
    4.
    发明授权
    Pixel Circuit, depth sensor having dual operating mode for high and low incident light and operating method 有权
    像素电路，深度传感器具有双重工作模式，用于高低入射光和操作方法

    公开(公告)号：US08835826B2

    公开(公告)日：2014-09-16

    申请号：US13611607

    申请日：2012-09-12

    申请人： Yong-Jei Lee ,  Yoon-Dong Park ,  Young-Gu Jin

    发明人： Yong-Jei Lee ,  Yoon-Dong Park ,  Young-Gu Jin

    IPC分类号： H01L27/00 ,  G01J1/02 ,  G01S17/89 ,  G01J1/18 ,  G01J1/44 ,  G01S7/491 ,  H04N5/369

    CPC分类号： G01J1/44 ,  G01J1/0228 ,  G01J1/18 ,  G01S7/4914 ,  G01S17/89 ,  H04N5/3696

    摘要： A pixel circuit for a depth sensor operating in a detection period and an output period in either a first operating mode (high incident light intensity) or a second operating mode (low incident light intensity). The pixel circuit includes a light receiving unit generating charge in response to the incident light, a signal generation unit accumulating charge in a FDN in response to a transmission signal, reset signal and selection signal during the detection period, and generating an analog signal having a level corresponding to a voltage apparent at the FDN during the output period, and a refresh transistor coupled between a supply voltage and the light receiving unit and discharging charge to the supply voltage in response to a refresh signal.

    摘要翻译： 用于在第一操作模式（高入射光强度）或第二操作模式（低入射光强度）中的检测周期和输出周期中操作的深度传感器的像素电路。 像素电路包括响应于入射光而产生电荷的光接收单元，信号生成单元响应于在检测周期期间的发送信号，复位信号和选择信号在FDN中累积电荷，并且生成具有 对应于在输出周期期间在FDN处显现的电压的电平，以及耦合在电源电压和光接收单元之间的刷新晶体管，并且响应于刷新信号将电荷放电到电源电压。

    CMOS IMAGE SENSOR AND METHOD OF DRIVING THE SAME
    5.
    发明申请
    CMOS IMAGE SENSOR AND METHOD OF DRIVING THE SAME 失效
    CMOS图像传感器及其驱动方法

    公开(公告)号：US20080035966A1

    公开(公告)日：2008-02-14

    申请号：US11679319

    申请日：2007-02-27

    申请人： Sung-In Hwang ,  Yong-Jei Lee ,  Jung-Chak Ahn ,  Ju-Hyun Ko

    发明人： Sung-In Hwang ,  Yong-Jei Lee ,  Jung-Chak Ahn ,  Ju-Hyun Ko

    IPC分类号： H01L31/062 ,  H01L21/00

    CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H04N5/3741 ,  H04N5/3745 ,  H04N5/37452

    摘要： A complementary metal-oxide semiconductor (CMOS) image sensor and a method of driving the CMOS image sensor that can reduce the number of devices required by each of a plurality of pixels and can stably drive the pixels, in which each of the pixels includes a photodiode that converts light energy into an electrical signal, a transfer transistor that transmits photocarriers stored in the photodiode to a floating diffusing region, a drive transistor that has a gate connected to the floating diffusion region and drives a voltage signal according to a voltage of the floating diffusion region, the voltage signal being output to an external device, and a capacitive device that is connected between a control voltage source and the floating diffusion region and, when a sensing operation of a corresponding pixel is terminated, deselects the pixel by altering the voltage of the floating diffusion region according to a control voltage provided by the control voltage source.

    摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器和驱动CMOS图像传感器的方法，其可以减少多个像素中的每一个所需的器件的数量，并且可以稳定地驱动像素，其中每个像素包括 将光能转换为电信号的光电二极管，将存储在光电二极管中的光载流子传输到浮动漫射区的传输晶体管，具有连接到浮动扩散区的栅极并根据所述浮动扩散区的电压驱动电压信号的驱动晶体管 浮动扩散区域，电压信号被输出到外部设备;以及电容器件，其连接在控制电压源和浮动扩散区域之间，并且当相应像素的感测操作终止时，通过改变像素 根据由控制电压源提供的控制电压，浮动扩散区域的电压。

    CMOS image sensors and methods of forming the same
    6.
    发明申请
    CMOS image sensors and methods of forming the same 审中-公开
    CMOS图像传感器及其形成方法

    公开(公告)号：US20080035969A1

    公开(公告)日：2008-02-14

    申请号：US11889501

    申请日：2007-08-14

    申请人： Ju-Hyun Ko ,  Yong-Jei Lee ,  Jung-Chak Ahn

    发明人： Ju-Hyun Ko ,  Yong-Jei Lee ,  Jung-Chak Ahn

    IPC分类号： H01L31/062 ,  H01L21/02

    CPC分类号： H01L27/14643 ,  H01L27/14601 ,  H01L27/14689

    摘要： Example embodiments may provide a CMOS image sensor and example methods of forming the same. Example embodiment CMOS image sensors may include a transfer gate insulating pattern between a transfer gate and an active region. A photodiode region and/or a floating doped region may be in the active region at either side of the transfer gate. The transfer gate insulating pattern may include a first part adjacent to the photodiode region and/or a second part adjacent to the floating doped region. The first part may be thicker than the second part.

    摘要翻译： 示例性实施例可提供CMOS图像传感器及其形成方法。 示例性实施例CMOS图像传感器可以包括传输门和有源区之间的传输门绝缘图案。 光电二极管区域和/或浮置掺杂区域可以在传输门的任一侧的有源区中。 传输栅极绝缘图案可以包括与光电二极管区域相邻的第一部分和/或与浮动掺杂区域相邻的第二部分。 第一部分可以比第二部分厚。

    Image sensors and image sensing methods selecting photocurrent paths according to incident light
    7.
    发明申请
    Image sensors and image sensing methods selecting photocurrent paths according to incident light 审中-公开
    图像传感器和图像感测方法根据入射光选择光电流路径

    公开(公告)号：US20080012973A1

    公开(公告)日：2008-01-17

    申请号：US11806594

    申请日：2007-06-01

    申请人： Jong-Eun Park ,  Yong-Jei Lee

    发明人： Jong-Eun Park ,  Yong-Jei Lee

    IPC分类号： H04N5/335

    CPC分类号： H04N5/335 ,  H04N5/378

    摘要： Example embodiments may be directed to CMOS image sensors and image sensing methods selecting a path for photocurrent according to the quantity or amount of incident light. The CMOS image sensor may include a pixel array comprised of a plurality of pixel pairs. A pixel pair may include a first pixel, including a first photo diode, a first pair of transistors, and a first floating diffusion node having a first capacitance. The pixel pair may further include a second pixel, including a second photo diode, a second pair of transistors, and a second floating diffusion node having a second capacitance. A first one of the first pair of transistors may be connected between the first photo diode and the first floating diffusion node. A second one of the first pair of transistors may be connected between the first photo diode and the second floating diffusion node. A first one of the second pair of transistors may be connected between the second photo diode and the second floating diffusion node. A second one of the second pair of transistors may be connected between the second photo diode and a first floating diffusion node of a next pixel pair. The first capacitance of the first floating diffusion node may be greater than the second capacitance of the second floating diffusion node.

    摘要翻译： 示例性实施例可以针对CMOS图像传感器和图像感测方法，其根据入射光的量或量选择光电流的路径。 CMOS图像传感器可以包括由多个像素对组成的像素阵列。 像素对可以包括第一像素，包括第一光电二极管，第一对晶体管和具有第一电容的第一浮动扩散节点。 像素对还可以包括第二像素，包括第二光电二极管，第二对晶体管和具有第二电容的第二浮动扩散节点。 第一对晶体管中的第一对可以连接在第一光电二极管和第一浮动扩散节点之间。 第一对晶体管中的第二对可以连接在第一光电二极管和第二浮动扩散节点之间。 第二对晶体管中的第一对可以连接在第二光电二极管和第二浮动扩散节点之间。 第二对晶体管中的第二对可以连接在第二光电二极管和下一个像素对的第一浮动扩散节点之间。 第一浮动扩散节点的第一电容可以大于第二浮动扩散节点的第二电容。

    CMOS image sensor and driving method of the same
    8.
    发明申请
    CMOS image sensor and driving method of the same 审中-公开
    CMOS图像传感器及其驱动方法相同

    公开(公告)号：US20090294816A1

    公开(公告)日：2009-12-03

    申请号：US12453532

    申请日：2009-05-14

    申请人： Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

    发明人： Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

    IPC分类号： H01L31/112

    CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14641

    摘要： Provided are a CMOS image sensor and a driving method thereof. The CMOS image sensor may include a photodetector disposed in a semiconductor substrate to accumulate photocharges, a charge transfer element configured to control transfer of the photocharges accumulated in the photodetector, a detecting element configured to detect the photocharges transferred by the charge transfer element, and a well driving contact configured to increase a potential difference between the photodetector and the detecting element while the photocharges are transferred.

    摘要翻译： 提供一种CMOS图像传感器及其驱动方法。 CMOS图像传感器可以包括设置在半导体衬底中以累积光电荷的光电检测器，被配置为控制在光电检测器中累积的光电荷的转移的电荷转移元件，被配置为检测由电荷转移元件传送的光电荷的检测元件，以及 良好的驱动接点被配置为在光电荷转移时增加光电检测器和检测元件之间的电位差。

    CMOS image sensor and method of driving the same
    9.
    发明授权
    CMOS image sensor and method of driving the same 失效
    CMOS图像传感器及其驱动方法

    公开(公告)号：US07598481B2

    公开(公告)日：2009-10-06

    申请号：US11679319

    申请日：2007-02-27

    申请人： Sung-In Hwang ,  Yong-Jei Lee ,  Jung-Chak Ahn ,  Ju-Hyun Ko

    发明人： Sung-In Hwang ,  Yong-Jei Lee ,  Jung-Chak Ahn ,  Ju-Hyun Ko

    IPC分类号： G01J1/44 ,  H01L27/00

    CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H04N5/3741 ,  H04N5/3745 ,  H04N5/37452

    摘要： A complementary metal-oxide semiconductor (CMOS) image sensor and a method of driving the CMOS image sensor that can reduce the number of devices required by each of a plurality of pixels and can stably drive the pixels, in which each of the pixels includes a photodiode that converts light energy into an electrical signal, a transfer transistor that transmits photocarriers stored in the photodiode to a floating diffusing region, a drive transistor that has a gate connected to the floating diffusion region and drives a voltage signal according to a voltage of the floating diffusion region, the voltage signal being output to an external device, and a capacitive device that is connected between a control voltage source and the floating diffusion region and, when a sensing operation of a corresponding pixel is terminated, deselects the pixel by altering the voltage of the floating diffusion region according to a control voltage provided by the control voltage source.

    摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器和驱动CMOS图像传感器的方法，其可以减少多个像素中的每一个所需的器件的数量，并且可以稳定地驱动像素，其中每个像素包括 将光能转换为电信号的光电二极管，将存储在光电二极管中的光载流子传输到浮动漫射区的传输晶体管，具有连接到浮动扩散区的栅极并根据所述浮动扩散区的电压驱动电压信号的驱动晶体管 浮动扩散区域，电压信号被输出到外部设备;以及电容器件，其连接在控制电压源和浮动扩散区域之间，并且当相应像素的感测操作终止时，通过改变像素 根据由控制电压源提供的控制电压，浮动扩散区域的电压。