公开(公告)号：US20050250312A1

公开(公告)日：2005-11-10

申请号：US11155729

申请日：2005-06-16

申请人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

发明人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76886 ,  H01L21/76805 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867

摘要： A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.

公开(公告)号：US20050098892A1

公开(公告)日：2005-05-12

申请号：US10718897

申请日：2003-11-20

申请人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

发明人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76886 ,  H01L21/76805 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867

摘要： A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.

摘要翻译： 提供金属互连的工艺和由其制造的金属互连结构。 在电介质层中形成开口。 在填充开口的电介质层上形成金属层。 在金属层和电介质层上形成膜层。 在热处理期间，膜层与金属层反应，在金属层的表面形成保护层。 除去与金属层不反应的膜层的部分，以避免金属层之间的短路。 保护层可以保护金属层的表面免受氧化，从而可以有效地促进半导体器件的稳定性和可靠性。

公开(公告)号：US06849541B1

公开(公告)日：2005-02-01

申请号：US10707517

申请日：2003-12-19

申请人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang ,  Tzung-Yu Hung

发明人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang ,  Tzung-Yu Hung

IPC分类号： H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76873 ,  H01L2221/1089

摘要： A method of forming at least one wire on a substrate. The substrate includes at least one conductive region. An insulating layer is disposed on the substrate. At least one recess in the insulating layer exposes the conductive region. A barrier layer is formed on a surface of the insulating layer and the recess first. A continuous and uniform conductive layer is then formed on a surface of the barrier layer. A seed layer is thereafter formed on a surface of the conductive layer. Finally, a metal layer filling up the recess is formed on a surface of the seed layer.

摘要翻译： 一种在衬底上形成至少一根线的方法。 衬底包括至少一个导电区域。 绝缘层设置在基板上。 绝缘层中的至少一个凹部露出导电区域。 首先在绝缘层的表面和凹部上形成阻挡层。 然后在阻挡层的表面上形成连续且均匀的导电层。 此后在导电层的表面上形成晶种层。 最后，在种子层的表面上形成填充凹部的金属层。

公开(公告)号：US07397124B2

公开(公告)日：2008-07-08

申请号：US11155729

申请日：2005-06-16

申请人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

发明人： Shao-Chung Hu ,  Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L23/48

CPC分类号： H01L21/76886 ,  H01L21/76805 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867

摘要： A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.

摘要翻译： 提供金属互连的工艺和由其制造的金属互连结构。 在电介质层中形成开口。 在填充开口的电介质层上形成金属层。 在金属层和电介质层上形成膜层。 在热处理期间，膜层与金属层反应，在金属层的表面形成保护层。 除去与金属层不反应的膜层的部分，以避免金属层之间的短路。 保护层可以保护金属层的表面免受氧化，从而可以有效地促进半导体器件的稳定性和可靠性。

公开(公告)号：US07199040B2

公开(公告)日：2007-04-03

申请号：US10841562

申请日：2004-05-10

申请人： Yu-Ru Yang ,  Chien-Chung Huang

发明人： Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76862

摘要： A barrier layer structure includes a first dielectric layer forming on a conductive layer and having a via being formed in the first dielectric layer, wherein the via in the first dielectric layer is connected to the conductive layer. A first metal layer is steppedly covered on the first dielectric layer. A layer of metallized materials is steppedly covered on the first metal layer, but the layer of metallized materials does not cover the first metal layer above the via bottom connected to the conductive layer in the dielectric layer. A second metal layer is steppedly covered on the layer of metallized materials, and the second metal layer is covered the first metal layer above the via bottom connected to the conductive layer in the dielectric layer. The barrier layer structure will have lower resistivity in the bottom via of the first dielectric layer and it is capable of preventing copper atoms from diffusing into the dielectric layer.

摘要翻译： 阻挡层结构包括在导电层上形成的第一介电层，并且在第一介电层中形成通孔，其中第一介电层中的通孔连接到导电层。 第一金属层被阶梯式地覆盖在第一介电层上。 金属化材料层被阶梯式地覆盖在第一金属层上，但是金属化材料层不覆盖连接到电介质层中的导电层的通孔底部上的第一金属层。 第二金属层被阶梯式地覆盖在金属化材料层上，并且第二金属层覆盖连接到电介质层中的导电层的通孔底部上的第一金属层。 阻挡层结构在第一电介质层的底部通孔中具有较低的电阻率，并且能够防止铜原子扩散到电介质层中。

公开(公告)号：US20120146225A1

公开(公告)日：2012-06-14

申请号：US13397833

申请日：2012-02-16

申请人： Yu-Ru YANG ,  Chien-Chung Huang

发明人： Yu-Ru YANG ,  Chien-Chung Huang

IPC分类号： H01L23/532

CPC分类号： H01L21/2855 ,  H01L21/76844 ,  H01L21/76846

摘要： A damascene structure includes a conductive layer, a first dielectric layer, a first barrier metal layer, a barrier layer, and a second barrier metal layer sequentially formed on the conductive layer. The first dielectric layer having a via therein. The barrier layer is comprised of a material different with that of the first barrier metal layer. A bottom of the barrier layer disposed on the via bottom is not punched through. The accomplished barrier layers will have lower resistivity on the via bottom in the first dielectric layer and they are capable of preventing copper atoms from diffusing into the dielectric layer.

摘要翻译： 镶嵌结构包括依次形成在导电层上的导电层，第一介电层，第一阻挡金属层，阻挡层和第二阻挡金属层。 第一电介质层中具有通孔。 阻挡层由与第一阻挡金属层不同的材料构成。 设置在通孔底部上的阻挡层的底部不穿孔。 完成的阻挡层在第一介电层中的通孔底部具有较低的电阻率，并且它们能够防止铜原子扩散到电介质层中。

公开(公告)号：US20070105367A1

公开(公告)日：2007-05-10

申请号：US11646387

申请日：2006-12-28

申请人： Yu-Ru Yang ,  Chien-Chung Huang

发明人： Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76862

摘要： A method for forming barrier layers comprises steps of providing a conductive layer, forming a first dielectric layer on the conductive layer, the first dielectric layer having a via therein, forming a first metal layer covering the first dielectric layer and the conductive layer, forming a layer of metallized materials on the first metal layer, removing the layer of metallized materials above the via bottom in the first dielectric layer, and leaving the layer of metallized materials remaining on a sidewall of the via in the first dielectric layer; and forming a second metal layer covering the layer of metallized materials. The accomplished barrier layers will have lower resistivity in the bottom via of the first dielectric layer and they are capable of preventing copper atoms from diffusing into the dielectric layer.

摘要翻译： 形成阻挡层的方法包括以下步骤：提供导电层，在导电层上形成第一介电层，第一介电层在其中具有通孔，形成覆盖第一介电层和导电层的第一金属层，形成 在第一金属层上的金属化材料层，去除第一介电层中的通孔底部上方的金属化材料层，并将金属化材料层留在第一介电层中的通孔的侧壁上; 以及形成覆盖所述金属化材料层的第二金属层。 完成的阻挡层在第一介电层的底部通孔中将具有较低的电阻率，并且它们能够防止铜原子扩散到电介质层中。

公开(公告)号：US08587128B2

公开(公告)日：2013-11-19

申请号：US13397833

申请日：2012-02-16

申请人： Yu-Ru Yang ,  Chien-Chung Huang

发明人： Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L23/48

CPC分类号： H01L21/2855 ,  H01L21/76844 ,  H01L21/76846

摘要： A damascene structure includes a conductive layer, a first dielectric layer, a first barrier metal layer, a barrier layer, and a second barrier metal layer sequentially formed on the conductive layer. The first dielectric layer having a via therein. The barrier layer is comprised of a material different with that of the first barrier metal layer. A bottom of the barrier layer disposed on the via bottom is not punched through. The accomplished barrier layers will have lower resistivity on the via bottom in the first dielectric layer and they are capable of preventing copper atoms from diffusing into the dielectric layer.

摘要翻译： 镶嵌结构包括依次形成在导电层上的导电层，第一介电层，第一阻挡金属层，阻挡层和第二阻挡金属层。 第一电介质层中具有通孔。 阻挡层由与第一阻挡金属层不同的材料构成。 设置在通孔底部上的阻挡层的底部不穿孔。 完成的阻挡层在第一介电层中的通孔底部具有较低的电阻率，并且它们能够防止铜原子扩散到电介质层中。

公开(公告)号：US07645698B2

公开(公告)日：2010-01-12

申请号：US11646387

申请日：2006-12-28

申请人： Yu-Ru Yang ,  Chien-Chung Huang

发明人： Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76862

摘要： A method for forming barrier layers comprises steps of providing a conductive layer, forming a first dielectric layer on the conductive layer, the first dielectric layer having a via therein, forming a first metal layer covering the first dielectric layer and the conductive layer, forming a layer of metallized materials on the first metal layer, removing the layer of metallized materials above the via bottom in the first dielectric layer, and leaving the layer of metallized materials remaining on a sidewall of the via in the first dielectric layer; and forming a second metal layer covering the layer of metallized materials. The accomplished barrier layers will have lower resistivity in the bottom via of the first dielectric layer and they are capable of preventing copper atoms from diffusing into the dielectric layer.

摘要翻译： 形成阻挡层的方法包括以下步骤：提供导电层，在导电层上形成第一介电层，第一介电层在其中具有通孔，形成覆盖第一介电层和导电层的第一金属层，形成 在第一金属层上的金属化材料层，去除第一介电层中的通孔底部上方的金属化材料层，并将金属化材料层留在第一介电层中的通孔的侧壁上; 以及形成覆盖所述金属化材料层的第二金属层。 完成的阻挡层在第一介电层的底部通孔中将具有较低的电阻率，并且它们能够防止铜原子扩散到电介质层中。

公开(公告)号：US20210347985A1

公开(公告)日：2021-11-11

申请号：US17250790

申请日：2018-09-07

申请人： Chien-Chung HUANG

发明人： Chien-Chung Huang ,  Yeng-Fong Shih

IPC分类号： C08L67/04 ,  C08L67/02 ,  C08K7/02

摘要： Disclosed is a biodegradable composition, including: 5 to 90 percent by weight of polylactic acid (PLA), 5 to 80 percent by weight of plant fiber, and 5 to 70 percent by weight of maleic anhydride-grafted polybutylene succinate (PBS-g-MA), acrylic acid-grafted polybutylene succinate (PBS-g-AA), or silane coupling agent-grafted polybutylene succinate (PBS-g-Silane). The article manufactured therefrom is not only biodegradable but also has an enhanced heat deformation temperature, impact resistance and tensile strength. Further, by so limiting the proportion of each component, compatibility between the components may be increased and crystallization of polylactic acid may be facilitated.