公开(公告)号：US11898032B2

公开(公告)日：2024-02-13

申请号：US17250790

申请日：2018-09-07

申请人： Chien-Chung Huang

发明人： Chien-Chung Huang ,  Yeng-Fong Shih

IPC分类号： C08L67/04 ,  C08K7/02 ,  C08L67/02 ,  C08L1/02

CPC分类号： C08L67/04 ,  C08K7/02 ,  C08L67/02 ,  C08L1/02 ,  C08L2201/06 ,  C08L2205/02 ,  C08L2205/16

摘要： Disclosed is a biodegradable composition, including: 5 to 90 percent by weight of polylactic acid (PLA), 5 to 80 percent by weight of plant fiber, and 5 to 70 percent by weight of maleic anhydride-grafted polybutylene succinate (PBS-g-MA), acrylic acid-grafted polybutylene succinate (PBS-g-AA), or silane coupling agent-grafted polybutylene succinate (PBS-g-Silane). The article manufactured therefrom is not only biodegradable but also has an enhanced heat deformation temperature, impact resistance and tensile strength. Further, by so limiting the proportion of each component, compatibility between the components may be increased and crystallization of polylactic acid may be facilitated.

公开(公告)号：US20230407096A1

公开(公告)日：2023-12-21

申请号：US18450679

申请日：2023-08-16

申请人： Chien-Chung Huang

发明人： Chien-Chung Huang

IPC分类号： C08L97/02 ,  A47G21/18 ,  C08L67/02

CPC分类号： C08L97/02 ,  A47G21/18 ,  C08L67/02 ,  C08L2201/06

摘要： A biodegradable straw, which includes: a plant acid-modified plant fiber material, accounting for 20 wt % to 70 wt % of a total weight of the biodegradable straw; and a PBS material, accounting for 30 wt % to 80 wt % of the total weight of the biodegradable straw; wherein the plant acid-modified plant fiber material is mixed with the PBS material and then extruded and molded into the biodegradable straw. The biodegradable plant fiber and PBS material serve as raw materials for the straw, and the plant fiber is transformed with plant acid to improve the natural decomposition efficiency of the biodegradable straw in the environment, reduce environmental pollution, meet the demands of environmental protection, and improve the food safety of the biodegradable straw. It also improves the economic benefit of the biodegradable straw and reduces the production cost.

公开(公告)号：US08587128B2

公开(公告)日：2013-11-19

申请号：US13397833

申请日：2012-02-16

申请人： Yu-Ru Yang ,  Chien-Chung Huang

发明人： Yu-Ru Yang ,  Chien-Chung Huang

IPC分类号： H01L23/48

CPC分类号： H01L21/2855 ,  H01L21/76844 ,  H01L21/76846

摘要： A damascene structure includes a conductive layer, a first dielectric layer, a first barrier metal layer, a barrier layer, and a second barrier metal layer sequentially formed on the conductive layer. The first dielectric layer having a via therein. The barrier layer is comprised of a material different with that of the first barrier metal layer. A bottom of the barrier layer disposed on the via bottom is not punched through. The accomplished barrier layers will have lower resistivity on the via bottom in the first dielectric layer and they are capable of preventing copper atoms from diffusing into the dielectric layer.

摘要翻译： 镶嵌结构包括依次形成在导电层上的导电层，第一介电层，第一阻挡金属层，阻挡层和第二阻挡金属层。 第一电介质层中具有通孔。 阻挡层由与第一阻挡金属层不同的材料构成。 设置在通孔底部上的阻挡层的底部不穿孔。 完成的阻挡层在第一介电层中的通孔底部具有较低的电阻率，并且它们能够防止铜原子扩散到电介质层中。

公开(公告)号：US08507350B2

公开(公告)日：2013-08-13

申请号：US13238045

申请日：2011-09-21

申请人： Chien-Chung Huang ,  Nien-Ting Ho

发明人： Chien-Chung Huang ,  Nien-Ting Ho

IPC分类号： H01L21/336

CPC分类号： H01L21/823412 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/823425 ,  H01L29/66628 ,  H01L29/66636

摘要： A fabricating method of a semiconductor element includes the following steps. First, a substrate is provided. A metal gate structure and source/drain electrodes are already formed on the substrate. An amorphization process is performed in the source/drain electrodes to form an amorphous portion. An interlayer dielectric layer is formed on surfaces of the source/drain electrodes and a through hole contact is formed within the interlayer dielectric layer. A silicidation process is performed with the through hole contact and the amorphous portion of the source/drain electrodes to form a metal silicide layer. The fabricating method is capable of finishing the formation of the metal silicide layer in the condition that diameters of the through hole contact is becoming smaller and smaller.

摘要翻译： 半导体元件的制造方法包括以下步骤。 首先，提供基板。 金属栅极结构和源极/漏极已经形成在衬底上。 在源/漏电极中进行非晶化处理以形成非晶部分。 在源/漏电极的表面上形成层间电介质层，并且在层间电介质层内形成通孔接触。 利用通孔接触和源极/漏极的非晶部分进行硅化处理以形成金属硅化物层。 该制造方法能够在通孔接触的直径变得越来越小的条件下完成金属硅化物层的形成。

公开(公告)号：US08344465B2

公开(公告)日：2013-01-01

申请号：US13424398

申请日：2012-03-20

申请人： Yi-Wei Chen ,  Nien-Ting Ho ,  Kuo-Chih Lai ,  Chien-Chung Huang

发明人： Yi-Wei Chen ,  Nien-Ting Ho ,  Kuo-Chih Lai ,  Chien-Chung Huang

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L29/665 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/28518 ,  H01L21/823443 ,  H01L21/823835 ,  H01L29/6659 ,  H01L29/7833

摘要： In a method of the present invention during a salicide process, before a second thermal process, a dopant is implanted at a place located in a region ranging from a NixSi layer at middle height down to a front thereof, or before formation of the NixSi layer, located in a region ranging from a silicon layer at a depth ranging from a half of a predetermined thickness of a NiSi layer down to a depth where is a predetermined front of the NiSi layer. The dopant is allowed to be heated with the NixSi layer together during the second thermal process to form a Si/NiSi2/NiSi interface which may reduce SBH and improve series resistance to obtain a semiconductor device having an excellent performance.

摘要翻译： 在本发明的方法中，在自对准硅化物工艺中，在第二热处理之前，将掺杂剂注入位于从中间高度的NixSi层到其前面的区域中，或者在形成NixSi层之前 位于从NiSi层的预定厚度的一半的深度到位于NiSi层的预定前方的深度的硅层的范围内。 在第二热处理期间允许掺杂剂与NixSi层一起加热以形成Si / NiSi 2 / NiSi界面，其可以降低SBH并提高串联电阻以获得具有优异性能的半导体器件。

公开(公告)号：US20120088345A1

公开(公告)日：2012-04-12

申请号：US12902149

申请日：2010-10-12

申请人： Yi-Wei Chen ,  Kuo-Chih Lai ,  Nien-Ting Ho ,  Chien-Chung Huang

发明人： Yi-Wei Chen ,  Kuo-Chih Lai ,  Nien-Ting Ho ,  Chien-Chung Huang

IPC分类号： H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848

摘要： A method for forming silicide is provided. First, a substrate is provided. Second, a gate structure is formed on the substrate which includes a silicon layer, a gate dielectric layer and at least one spacer. Then, a pair of source and drain is formed in the substrate and adjacent to the gate structure. Later, an interlayer dielectric layer is formed to cover the gate structure, the source and the drain. Afterwards, the interlayer dielectric layer is selectively removed to expose the gate structure. Next, multiple contact holes are formed in the interlayer dielectric layer to expose part of the substrate. Afterwards, the exposed substrate is converted to form silicide.

摘要翻译： 提供了一种形成硅化物的方法。 首先，提供基板。 其次，在包括硅层，栅极电介质层和至少一个间隔物的基板上形成栅极结构。 然后，在衬底中形成一对源极和漏极，并且与栅极结构相邻。 然后，形成层间电介质层以覆盖栅极结构，源极和漏极。 然后，选择性地去除层间绝缘层以露出栅极结构。 接下来，在层间电介质层中形成多个接触孔，露出基板的一部分。 之后，将曝光的基底转变成硅化物。

公开(公告)号：US07983051B2

公开(公告)日：2011-07-19

申请号：US12100023

申请日：2008-04-09

申请人： Jiunn-Chung Lee ,  Chien-Chung Huang

发明人： Jiunn-Chung Lee ,  Chien-Chung Huang

IPC分类号： H05K1/00

CPC分类号： H05K1/181 ,  G11C5/00 ,  H05K2201/09254 ,  H05K2201/10159 ,  H05K2201/10189 ,  Y02P70/611

摘要： A dynamic radon access memory (DRAM) module includes a printed circuit board, a number of DRAM units, a number of flash memory units, a number connecting pins and an interface controller. The DRAM units and the flash memory units are distributed on the printed circuit board. The connecting pins are formed at an edge of the printed circuit board. The interface controller is electrically connected to the flash memory units and a portion of the connecting pins, wherein each of the interface controller provides at least one serial interface between the flash memory units and the portion of connecting pins thereby enabling data transmission through the portion of connecting pins in at least one serial mode. The flash memory units integrally constitute a flash disk drive in the DRAM module. Therefore, frequently installation and uninstallation of the flash memory drive can be avoided. A motherboard assembly including the aforementioned DRAM module can be developed.

摘要翻译： 动态氡存取存储器（DRAM）模块包括印刷电路板，多个DRAM单元，多个闪存单元，数字连接引脚和接口控制器。 DRAM单元和闪存单元分布在印刷电路板上。 连接销形成在印刷电路板的边缘。 接口控制器电连接到闪存单元和连接引脚的一部分，其中每个接口控制器在闪存单元和连接引脚的部分之间提供至少一个串行接口，从而使数据可以通过 在至少一个串行模式下连接引脚。 闪存单元一体地构成DRAM模块中的闪存盘驱动器。 因此，可以避免闪存驱动器的频繁安装和卸载。 可以开发包括上述DRAM模块的主板组件。

公开(公告)号：US07947565B2

公开(公告)日：2011-05-24

申请号：US11672307

申请日：2007-02-07

申请人： Mei-Ling Chen ,  Kuo-Chih Lai ,  Su-Jen Sung ,  Chien-Chung Huang ,  Yu-Tsung Lai

发明人： Mei-Ling Chen ,  Kuo-Chih Lai ,  Su-Jen Sung ,  Chien-Chung Huang ,  Yu-Tsung Lai

IPC分类号： H01L21/443 ,  H01L33/16

CPC分类号： H01L21/31695 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76835 ,  Y10T428/24992

摘要： A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.

摘要翻译： 描述形成多孔低k层的方法。 对基材进行CVD工艺，其中提供骨架前体和致孔剂前体。 在框架前体的供给的结束期间，减少与CVD工艺的产物的密度负相关的至少一个沉积参数的值。

公开(公告)号：US20100304042A1

公开(公告)日：2010-12-02

申请号：US12475595

申请日：2009-05-31

申请人： Hsiu-Lien Liao ,  Teng-Chun Tsai ,  Jei-Ming Chen ,  Yu-Tuan Tsai ,  Chien-Chung Huang

发明人： Hsiu-Lien Liao ,  Teng-Chun Tsai ,  Jei-Ming Chen ,  Yu-Tuan Tsai ,  Chien-Chung Huang

IPC分类号： B05D3/14

CPC分类号： H01L21/3185 ,  C23C16/0218 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02315

摘要： A method for forming super high stress layer is provided. First, a substrate is provided. Second, an ammonia-related pretreatment is performed on the substrate. The flow rate of ammonia is not less than s.c.c.m. and the high-frequency source power is set to be not less than 800 W. Later, the super high stress layer is formed on the substrate having undergone the ammonia-related pretreatment.

摘要翻译： 提供了一种形成超高应力层的方法。 首先，提供基板。 其次，在基板上进行与氨相关的预处理。 氨的流量不小于s.c.c.m。 高频源功率设定为800W以上。然后，在经过氨相关预处理的基板上形成超高应力层。

公开(公告)号：US20100254148A1

公开(公告)日：2010-10-07

申请号：US12461032

申请日：2009-07-30

申请人： Chien-Chung Huang ,  Yen-Wei Ho

发明人： Chien-Chung Huang ,  Yen-Wei Ho

IPC分类号： F21V29/00

CPC分类号： F21V29/75 ,  F21S4/28 ,  F21V15/013 ,  F21V21/30 ,  F21V27/02 ,  F21V29/76 ,  F21V31/005 ,  F21Y2101/00 ,  F21Y2103/10 ,  F21Y2115/10

摘要： A lamp holder structure having heat dissipation fins comprises a base having a recess with threaded holes for install a luminous lamp set and at least one power line-in for connecting a power line. A plurality of heat dissipation fins arranged in parallel is extended and integrated from a corresponding exterior of the recess and a plurality of heat dissipation diverging fins is extended and integrated from an extreme exterior of the heat dissipation fins. Symmetric protruding plates are connected to predetermined places of the exterior of the base to pivotally connect a positioning plate capable of adjusting angles. A light-transmissive plate further seals the base and symmetric side strips are used to respectively lock symmetric frame borders of the base to position the light-transmissive plate. The corresponding sides of the recess of the base have locking holes for locking symmetric side covers.

摘要翻译： 具有散热翅片的灯座结构包括具有用于安装发光灯组的螺纹孔的凹部和用于连接电力线的至少一个电源线的基座。 平行布置的多个散热片从凹槽的相应外部延伸并整合，并且多个散热发散翅片从散热翅片的极端外部延伸和集成。 对称突出板连接到基座的外部的预定位置，以枢转地连接能够调节角度的定位板。 透光板进一步密封基座，对称侧条用于分别锁定基座的对称框架边界以定位透光板。 基座的凹部的相应侧面具有用于锁定对称侧盖的锁定孔。