Electron beam control device
    1.
    发明授权
    Electron beam control device 有权
    电子束控制装置

    公开(公告)号:US06803584B2

    公开(公告)日:2004-10-12

    申请号:US10366746

    申请日:2003-02-14

    IPC分类号: H01J3700

    摘要: An electron beam control device controls an electron beam for use, such as an electron beam exposure device and the like, wherein a track of an electron beam is not adversely Influenced by the amount of magnetic variation occurring influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure and the like, wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.

    摘要翻译: 电子束控制装置控制使用的电子束,例如电子束曝光装置等,其中电子束的轨迹不受不利影响的磁性变化的影响。 控制电子束如电子显微镜,电子束曝光等的电子束控制装置,其中,用于测量影响电子束的轨迹的磁性变化量的磁力计传感器, 影响,提供。

    Pattern drawing apparatus
    2.
    发明授权
    Pattern drawing apparatus 失效
    图案绘图仪

    公开(公告)号:US5757019A

    公开(公告)日:1998-05-26

    申请号:US611772

    申请日:1996-03-06

    摘要: A pattern drawing apparatus is provided. This apparatus draws a pattern on an object by irradiating the object with an electron beam. A pattern data corresponding to the pattern to be drawn is stored in a memory. The pattern data is sent to a controller that controls irradiation of the electron beam to the object. Check is made whether the controller correctly controls the irradiation of the electron beam in accordance with the stored pattern data. Another memory stores the pattern data per a predetermined number of bits included in the pattern data. The bit data is sent to the controller that generates high and low voltages to control the irradiation of the electron beam. A counter counts the numbers of bits and high or low voltages. A comparator compares the counted numbers of bits and voltages. The comparison results are sent to an indicator that indicates an error when the counted numbers are different from each other. The counted numbers themselves may be indicated. Instead of the comparator, an exclusive-OR circuit may be provided. The bits of the pattern data are exclusive-ORed with the voltages expressed as bits. The output of the exclusive-OR circuit may be indicated as a bit map. Further, the bits of the pattern data and the voltages also may be indicated as bit maps.

    摘要翻译: 提供了图案描绘装置。 该装置通过用电子束照射物体来在物体上绘制图案。 对应于要绘制的图案的图案数据被存储在存储器中。 图案数据被发送到控制器,其控制对对象的电子束的照射。 检查控制器是否根据存储的模式数据正确地控制电子束的照射。 另一个存储器存储图案数据中包含的预定位数的图案数据。 位数据被发送到产生高电压和低电压的控制器,以控制电子束的照射。 计数器对位数和高电平或低电压进行计数。 比较器比较计数的位数和电压。 比较结果被发送到指示器,其指示当计数的数字彼此不同时的错误。 可以指示自己计数的数字。 代替比较器,可以提供异或电路。 模式数据的位与表示为位的电压异或。 异或电路的输出可以被指示为位图。 此外,图案数据和电压的位也可以表示为位图。

    Defect inspection apparatus for phase shift mask
    3.
    发明授权
    Defect inspection apparatus for phase shift mask 有权
    相移掩模缺陷检查装置

    公开(公告)号:US06879393B2

    公开(公告)日:2005-04-12

    申请号:US09920450

    申请日:2001-08-01

    摘要: The present invention relates to a defect inspection apparatus for a phase shift mask that is capable of detecting phase shifter defects that cannot be detected by conventional inspection techniques, by a simple method using an optical method and a comparison of electric signals. In a defect inspection apparatus for a phase shift mask having a phase shifter pattern provided on a mask transparent substrate 1, after the phase shifter pattern has been formed, a phase shifter defect inspection is performed from the mask transparent substrate 1 side of the phase shift mask 1. To perform the defect inspection, light 12 is applied to the phase shift mask 1 from the mask transparent substrate 1 side thereof, and reflection images of at least two different phase shifter pattern fabricated regions are captured by photoelectric conversion light-receiving elements 15a and 15b. The respective image signals 17 and 18 of the reflection images are compared with each other to detect a defect on the mask from the difference between the signals.

    摘要翻译: 本发明涉及一种用于通过使用光学方法的简单方法和电信号的比较来检测常规检查技术无法检测的移相器缺陷的相移掩模的缺陷检查装置。 在具有设置在掩模透明基板1上的移相器图案的相移掩模的缺陷检查装置中,在形成移相器图案之后,从相移的掩模透明基板1侧进行移相器缺陷检查 掩模1.为了进行缺陷检查,从掩模透明基板1侧将光12施加到相移掩模1,并且通过光电转换光接收元件捕获至少两个不同的移相器图案制造区域的反射图像 15a和15b。 将反射图像的各图像信号17和18相互比较,以从信号之间的差异检测掩模上的缺陷。