摘要:
The present invention relates to a defect inspection apparatus for a phase shift mask that is capable of detecting phase shifter defects that cannot be detected by conventional inspection techniques, by a simple method using an optical method and a comparison of electric signals. In a defect inspection apparatus for a phase shift mask having a phase shifter pattern provided on a mask transparent substrate 1, after the phase shifter pattern has been formed, a phase shifter defect inspection is performed from the mask transparent substrate 1 side of the phase shift mask 1. To perform the defect inspection, light 12 is applied to the phase shift mask 1 from the mask transparent substrate 1 side thereof, and reflection images of at least two different phase shifter pattern fabricated regions are captured by photoelectric conversion light-receiving elements 15a and 15b. The respective image signals 17 and 18 of the reflection images are compared with each other to detect a defect on the mask from the difference between the signals.
摘要:
In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).
摘要:
A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.
摘要:
The present invention provides film formation systems and film formation methods. A high frequency (HF) electric power supply (11) applies a high frequency voltage to a cathode (5) which is provided, at its rear surface, with a permanent magnet (10), thereby to generate a reactive-mode plasma, and film formation by plasma polymerization is performed by the use of the generated reactive-mode plasma. The pressure of a plasma source gas in a vacuum chamber (1) is regulated, thereby to generate not a reactive-mode plasma but a metallic-mode plasma. The cathode (5) as a target is subjected to sputtering by the generated metallic-mode plasma, and film formation by magnetron sputtering is carried out.
摘要:
A plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.
摘要:
An arc evaporator comprises: an anode; an evaporation source electrode as a cathode; and a current control unit for supplying an AC square wave arcing current across the anode and the evaporation source electrode.
摘要:
A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.
摘要:
Exposure of fine patterns on a photoresist is carried out by controlling the humidity and temperature of a gas to be supplied to an exposure apparatus separate from the ambient atmosphere.Temperature of the atmosphere at least in the vicinity of a photoresist is controlled in a predetermined range and air or gas to be supplied to the exposure space is humidified to a desired degree.Water content in the photoresist is kept uniform and constant by the specially controlled atmosphere and enables uniform pattern width of the exposed fine pattern all over the photoresist surface.
摘要:
A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the chamber onto a transparent defect of the mask pattern. The irradiated portion is heated and the vaporized repairing material at the heated portion is resolved, resulting in the metal resolved from the repairing material deposits and fills the transparent defect. Thus, transparent defects of a mask pattern can be repaired in a simplified process.
摘要:
A film-forming apparatus (100) includes: a vacuum chamber (30) configured to store a substrate (34B) in which a through-hole is formed and a source of copper emission (35B); a vacuum pump (36) configured to decompress an interior of the vacuum chamber (30) to a predetermined degree of vacuum; a power supply (80) configured to generate electric power applied to the substrate (34B); and a driving mechanism for use in setting a distance between the substrate (34B) and the source of copper emission (35B). When a copper material emitted from the source of copper emission (35B) is deposited on one main surface of the substrate (34B) to block an opening of the through-hole in the one main surface by means of a deposited film formed of the copper material, a blocked state of the opening blocked by the deposited film is adjusted based on the distance and the electric power.