公开(公告)号：US11955367B2

公开(公告)日：2024-04-09

申请号：US17474403

申请日：2021-09-14

Applicant: Shibaura Mechatronics Corporation

Inventor： Shohei Tanabe ,  Koji Yoshimura ,  Ryo Matsuhashi

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/34 ,  H01L21/02

CPC classification number: H01L21/68764 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32504 ,  H01J37/3435 ,  H01L21/02274 ,  H01J2237/332

Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

公开(公告)号：US12043898B2

公开(公告)日：2024-07-23

申请号：US17174592

申请日：2021-02-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shohei Tanabe ,  Koji Yoshimura

IPC: C23C14/56 ,  C23C16/44 ,  C23C16/458 ,  H01J37/34 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/4586 ,  C23C16/45551 ,  H01J37/3488

Abstract: According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided. The film formation apparatus according to the present embodiment includes the chamber 10 which an interior thereof can be made vacuum, the exhauster 20 that exhausts the interior of the chamber 10, the carrier 30 that circularly carries the workpiece W by a rotation table 31 provided inside the chamber 10, and the plurality of the plasma processor 40 that performs plasma processing on the workpiece W which is circularly carried, in which the plurality of the plasma processor 40 each has the processing spaces 41 and 42 to perform the plasma processing, at least one of the plurality of the plasma processor 40 is the film formation processor 410 that performs film formation processing by sputtering on the workpiece W which is circularly carried, and at least one of the plurality of the plasma processor 40 is the heater 420 that removes moisture in the chamber 10 by producing plasma and heating the interior of the chamber 10 via the rotation table 31 together with exhaustion by the exhauster 20 and rotation by the rotation table 31 in a condition the film formation process by the film formation processor 410 is not performed.