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    Method of manufacturing plasmon generator
    6.
    发明授权
    Method of manufacturing plasmon generator 有权
    等离子体发生器的制造方法

    公开(公告)号：US08691102B1

    公开(公告)日：2014-04-08

    申请号：US13731754

    申请日：2012-12-31

    申请人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Yukinori Ikegawa ,  Seiichiro Tomita ,  Shigeki Tanemura

    发明人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Yukinori Ikegawa ,  Seiichiro Tomita ,  Shigeki Tanemura

    IPC分类号： C03C15/00

    CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

    摘要： A method of manufacturing a plasmon generator includes the steps of: forming an etching mask on a dielectric layer; forming an accommodation part by etching the dielectric layer using the etching mask; and forming the plasmon generator to be accommodated in the accommodation part. The step of forming the etching mask includes the steps of: forming a patterned layer on an etching mask material layer, the patterned layer having a first opening that has a sidewall; forming a structure by forming an adhesion film on the sidewall, the structure having a second opening smaller than the first opening; and etching a portion of the etching mask material layer exposed from the second opening.

    摘要翻译： 一种制造等离子体发生器的方法包括以下步骤：在电介质层上形成蚀刻掩模; 通过使用蚀刻掩模蚀刻电介质层来形成容纳部分; 以及形成要容纳在容纳部分中的等离子体发生器。 形成蚀刻掩模的步骤包括以下步骤：在蚀刻掩模材料层上形成图案化层，所述图案化层具有具有侧壁的第一开口; 通过在侧壁上形成粘合膜来形成结构，该结构具有比第一开口小的第二开口; 并蚀刻从第二开口露出的蚀刻掩模材料层的一部分。

    Plasmon generator including two portions made of different metals
    7.
    发明授权
    Plasmon generator including two portions made of different metals 有权
    等离子体发生器包括由不同金属制成的两部分

    公开(公告)号：US08576674B2

    公开(公告)日：2013-11-05

    申请号：US13283064

    申请日：2011-10-27

    申请人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Hironori Araki ,  Kazuki Sato ,  Yukinori Ikegawa

    发明人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Hironori Araki ,  Kazuki Sato ,  Yukinori Ikegawa

    IPC分类号： G11B11/00

    CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    摘要： A plasmon generator configured to excite a surface plasmon based on light includes a first portion formed of a first metal material and a second portion formed of a second metal material different from the first metal material. The plasmon generator has a front end face. The front end face includes a near-field light generating part that generates near-field light based on the surface plasmon. The second portion includes an end face located in the front end face. The second metal material satisfies at least one of the following requirements: a lower ionization tendency than that of the first metal material; a lower electrical conductivity than that of the first metal material; and a higher Vickers hardness than that of the first metal material.

    摘要翻译： 构造成基于光激发表面等离子体的等离子体发生器包括由第一金属材料形成的第一部分和由与第一金属材料不同的第二金属材料形成的第二部分。 等离子体发生器具有前端面。 前端面包括基于表面等离子体生成近场光的近场光产生部。 第二部分包括位于前端面中的端面。 第二金属材料满足以下要求中的至少一个：比第一金属材料低的电离倾向; 电导率低于第一金属材料; 并且维氏硬度高于第一金属材料的硬度。

    Taper-etching method and method of manufacturing near-field light generator
    8.
    发明授权
    Taper-etching method and method of manufacturing near-field light generator 有权
    锥形蚀刻方法及制造近场光发生器的方法

    公开(公告)号：US08461050B2

    公开(公告)日：2013-06-11

    申请号：US13157938

    申请日：2011-06-10

    申请人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    发明人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    IPC分类号： H01L21/311

    CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B2005/0021 ,  H01L21/31116

    摘要： A method of taper-etching a layer to be etched that is made of SiO2 or SiON and has a top surface. The method includes the step of forming an etching mask with an opening on the top surface of the layer to be etched, and the step of taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces that intersect at a predetermined angle is formed in the layer to be etched. The etching mask is formed of a material containing elemental Al. The step of taper-etching employs an etching gas that contains a main component gas, which contributes to the etching of the layer to be etched, and N2.

    摘要翻译： 一种由SiO 2或SiON制成并具有顶表面的蚀刻层的蚀刻方法。 该方法包括以下步骤：在待蚀刻层的顶表面上形成具有开口的蚀刻掩模;以及将待蚀刻层的一部分从开口暴露的部分，通过反应 离子蚀刻，使得在被蚀刻层中形成具有以预定角度相交的两个壁面的凹槽。 蚀刻掩模由含有元素Al的材料形成。 锥蚀刻的步骤使用包含有助于蚀刻蚀刻层的主要成分气体和N 2的蚀刻气体。