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    Magnetic head including a first and second insulating film between a coil element and a write shield
    3.
    发明授权
    Magnetic head including a first and second insulating film between a coil element and a write shield 有权
    磁头包括在线圈元件和写入屏蔽之间的第一和第二绝缘膜

    公开(公告)号：US09076465B1

    公开(公告)日：2015-07-07

    申请号：US14107546

    申请日：2013-12-16

    申请人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa ,  Hironori Araki ,  Tatsuya Shimizu

    发明人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa ,  Hironori Araki ,  Tatsuya Shimizu

    IPC分类号： G11B5/127 ,  G11B5/17 ,  G11B5/11 ,  G11B5/31

    CPC分类号： G11B5/3123 ,  G11B5/1278 ,  G11B5/3116

    摘要： A magnetic head includes a coil, a main pole, a write shield, a first insulating film, and a second insulating film. The coil includes a specific coil element. The main pole has a top surface including an inclined surface portion and a flat surface portion. The write shield includes an inclined portion. The inclined portion includes a first portion opposed to the inclined surface portion, and a second portion located farther from a medium facing surface than the first portion. The specific coil element includes an interposition part interposed between the flat surface portion and the second portion. The first insulating film is interposed between the inclined surface portion and the first portion of the inclined portion, and between the interposition part and the second portion of the inclined portion. The second insulating film is interposed between the first insulating film and the second portion of the inclined portion.

    摘要翻译： 磁头包括线圈，主极，写入屏蔽，第一绝缘膜和第二绝缘膜。 线圈包括特定的线圈元件。 主极具有包括倾斜表面部分和平坦表面部分的顶表面。 写入屏蔽包括倾斜部分。 倾斜部分包括与倾斜表面部分相对的第一部分和位于比第一部分更远离介质面向表面的第二部分。 特定线圈元件包括介于平表面部分和第二部分之间的插入部分。 第一绝缘膜介于倾斜部分的倾斜表面部分和倾斜部分的第一部分之间，以及插入部分和倾斜部分的第二部分之间。 第二绝缘膜介于第一绝缘膜和倾斜部分的第二部分之间。

    Plasmon generator including two portions made of different metals
    5.
    发明授权
    Plasmon generator including two portions made of different metals 有权
    等离子体发生器包括由不同金属制成的两部分

    公开(公告)号：US08576674B2

    公开(公告)日：2013-11-05

    申请号：US13283064

    申请日：2011-10-27

    申请人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Hironori Araki ,  Kazuki Sato ,  Yukinori Ikegawa

    发明人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Hironori Araki ,  Kazuki Sato ,  Yukinori Ikegawa

    IPC分类号： G11B11/00

    CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    摘要： A plasmon generator configured to excite a surface plasmon based on light includes a first portion formed of a first metal material and a second portion formed of a second metal material different from the first metal material. The plasmon generator has a front end face. The front end face includes a near-field light generating part that generates near-field light based on the surface plasmon. The second portion includes an end face located in the front end face. The second metal material satisfies at least one of the following requirements: a lower ionization tendency than that of the first metal material; a lower electrical conductivity than that of the first metal material; and a higher Vickers hardness than that of the first metal material.

    摘要翻译： 构造成基于光激发表面等离子体的等离子体发生器包括由第一金属材料形成的第一部分和由与第一金属材料不同的第二金属材料形成的第二部分。 等离子体发生器具有前端面。 前端面包括基于表面等离子体生成近场光的近场光产生部。 第二部分包括位于前端面中的端面。 第二金属材料满足以下要求中的至少一个：比第一金属材料低的电离倾向; 电导率低于第一金属材料; 并且维氏硬度高于第一金属材料的硬度。

    Taper-etching method and method of manufacturing near-field light generator
    6.
    发明授权
    Taper-etching method and method of manufacturing near-field light generator 有权
    锥形蚀刻方法及制造近场光发生器的方法

    公开(公告)号：US08461050B2

    公开(公告)日：2013-06-11

    申请号：US13157938

    申请日：2011-06-10

    申请人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    发明人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    IPC分类号： H01L21/311

    CPC分类号： G11B5/314 ,  G11B5/3163 ,  G11B2005/0021 ,  H01L21/31116

    摘要： A method of taper-etching a layer to be etched that is made of SiO2 or SiON and has a top surface. The method includes the step of forming an etching mask with an opening on the top surface of the layer to be etched, and the step of taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces that intersect at a predetermined angle is formed in the layer to be etched. The etching mask is formed of a material containing elemental Al. The step of taper-etching employs an etching gas that contains a main component gas, which contributes to the etching of the layer to be etched, and N2.

    摘要翻译： 一种由SiO 2或SiON制成并具有顶表面的蚀刻层的蚀刻方法。 该方法包括以下步骤：在待蚀刻层的顶表面上形成具有开口的蚀刻掩模;以及将待蚀刻层的一部分从开口暴露的部分，通过反应 离子蚀刻，使得在被蚀刻层中形成具有以预定角度相交的两个壁面的凹槽。 蚀刻掩模由含有元素Al的材料形成。 锥蚀刻的步骤使用包含有助于蚀刻蚀刻层的主要成分气体和N 2的蚀刻气体。

    Magnetic head for perpendicular magnetic recording including a main pole with a lower protrusion
    7.
    发明授权
    Magnetic head for perpendicular magnetic recording including a main pole with a lower protrusion 有权
    用于垂直磁记录的磁头，包括具有下凸起的主极

    公开(公告)号：US09336798B1

    公开(公告)日：2016-05-10

    申请号：US14567590

    申请日：2014-12-11

    申请人： Yoshitaka Sasaki ,  Kazuki Sato ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Hironori Araki ,  Yukinori Ikegawa

    发明人： Yoshitaka Sasaki ,  Kazuki Sato ,  Hiroyuki Ito ,  Shigeki Tanemura ,  Hironori Araki ,  Yukinori Ikegawa

    IPC分类号： G11B5/187 ,  G11B5/127 ,  G11B5/17 ,  G11B5/31

    CPC分类号： G11B5/1278 ,  G11B5/02 ,  G11B5/17 ,  G11B5/187 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3169

    摘要： A main pole includes a main body and a lower protrusion. The lower protrusion is located at a distance from a medium facing surface. The main body includes a front portion and a rear portion. The front portion has a first side surface and a second side surface. The lower protrusion has a third side surface and a fourth side surface. A first side shield has a first sidewall opposed to the first side surface. A second side shield has a second sidewall opposed to the second side surface. A bottom shield includes a receiving section. The receiving section has a third sidewall opposed to the third side surface, and a fourth sidewall opposed to the fourth side surface. The receiving section and the lower protrusion are formed in a self-aligned manner by using the first and second side shields.

    摘要翻译： 主杆包括主体和下突起。 下突出部位于与面向介质的表面相距一定距离处。 主体包括前部和后部。 前部具有第一侧表面和第二侧表面。 下突起具有第三侧表面和第四侧表面。 第一侧屏蔽具有与第一侧表面相对的第一侧壁。 第二侧屏蔽具有与第二侧表面相对的第二侧壁。 底部屏蔽包括接收部分。 接收部分具有与第三侧表面相对的第三侧壁和与第四侧表面相对的第四侧壁。 通过使用第一和第二侧面屏蔽件以自对准的方式形成接收部分和下部突出部。

    Method of forming main pole of thermally-assisted magnetic recording head
    8.
    发明授权
    Method of forming main pole of thermally-assisted magnetic recording head 有权
    形成热辅助磁记录头主极的方法

    公开(公告)号：US08465658B2

    公开(公告)日：2013-06-18

    申请号：US13110442

    申请日：2011-05-18

    申请人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    发明人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    IPC分类号： B44C1/22 ,  G11B5/127 ,  G11B11/00

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B2005/0021 ,  Y10T29/4902 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49043

    摘要： In a method of forming a main pole, an initial accommodation layer is etched by RIE using a first etching mask having a first opening, whereby a groove is formed in the initial accommodation layer. Next, a part of the initial accommodation layer including the groove is etched by RIE using a second etching mask having a second opening, so that the groove becomes an accommodation part. The main pole is then formed in the accommodation part. The first etching mask has first and second sidewalls that face the first opening and are opposed to each other at a first distance in a track width direction. The second etching mask has third and fourth sidewalls that face the second opening and are opposed to each other at a second distance greater than the first distance.

    摘要翻译： 在形成主极的方法中，使用具有第一开口的第一蚀刻掩模，通过RIE蚀刻初始容纳层，由此在初始容纳层中形成凹槽。 接下来，使用具有第二开口的第二蚀刻掩模，通过RIE蚀刻包括凹槽的初始容纳层的一部分，使得凹槽变成容纳部分。 主杆然后形成在容纳部分中。 第一蚀刻掩模具有面向第一开口并且在轨道宽度方向上以第一距离彼此相对的第一和第二侧壁。 第二蚀刻掩模具有面向第二开口的第三和第四侧壁，并且在大于第一距离的第二距离处彼此相对。

    Method of manufacturing plasmon generator
    9.
    发明授权
    Method of manufacturing plasmon generator 有权
    等离子体发生器的制造方法

    公开(公告)号：US08400884B1

    公开(公告)日：2013-03-19

    申请号：US13353981

    申请日：2012-01-19

    申请人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    发明人： Hironori Araki ,  Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Yukinori Ikegawa

    IPC分类号： G11B21/08 ,  G11B7/085

    CPC分类号： G11B5/3163 ,  B82Y20/00 ,  G02B6/1226 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    摘要： A method of manufacturing a plasmon generator includes the steps of forming an accommodation part and forming the plasmon generator to be accommodated in the accommodation part. The step of forming the accommodation part includes the steps of: forming a dielectric layer having an upper surface; etching the dielectric layer by using an etching mask and thereby forming a groove in the dielectric layer; and forming a dielectric film in the groove. The groove has first and second sidewalls and a bottom. Each of the first and second sidewalls forms an angle in the range of 0° to 15° relative to the direction perpendicular to the upper surface of the dielectric layer. The dielectric film includes a first portion interposed between the first sidewall and the first side surface, and a second portion interposed between the second sidewall and the second side surface.

    摘要翻译： 制造等离子体发生器的方法包括以下步骤：形成容纳部分并形成容纳在容纳部分中的等离子体发生器。 形成容纳部的步骤包括以下步骤：形成具有上表面的电介质层; 通过使用蚀刻掩模蚀刻介电层，从而在电介质层中形成凹槽; 以及在所述槽中形成电介质膜。 凹槽具有第一和第二侧壁和底部。 第一和第二侧壁中的每一个相对于与电介质层的上表面垂直的方向形成0°至15°的范围内的角度。 介电膜包括介于第一侧壁和第一侧表面之间的第一部分和介于第二侧壁和第二侧表面之间的第二部分。