利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.028 秒)

    Annealing apparatus
    1.
    发明授权
    Annealing apparatus 有权
    退火设备

    公开(公告)号：US08246900B2

    公开(公告)日：2012-08-21

    申请号：US12440034

    申请日：2007-08-31

    申请人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

    发明人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

    IPC分类号： H01L21/26 ,  C21D1/74

    CPC分类号： H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

    摘要： Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.

    摘要翻译： 提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

    ANNEALING APPARATUS
    2.
    发明申请
    ANNEALING APPARATUS 有权
    退火装置

    公开(公告)号：US20100038833A1

    公开(公告)日：2010-02-18

    申请号：US12440034

    申请日：2007-08-31

    申请人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

    发明人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

    IPC分类号： H01L21/26 ,  C21D1/74

    CPC分类号： H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

    摘要： Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.

    摘要翻译： 提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

    ANNEALING APPARATUS
    5.
    发明申请
    ANNEALING APPARATUS 有权
    退火装置

    公开(公告)号：US20110033175A1

    公开(公告)日：2011-02-10

    申请号：US12864792

    申请日：2009-01-19

    申请人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Tomohiro Suzuki ,  Masatake Yoneda ,  Kazuhiro Ooya

    发明人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Tomohiro Suzuki ,  Masatake Yoneda ,  Kazuhiro Ooya

    IPC分类号： F27D11/12

    CPC分类号： H01L21/67109 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115

    摘要： An annealing apparatus includes heating sources 17a and 17b provided to face a wafer W, the heating sources 17a and 17b having LEDs 33 emitting lights to the wafer; light-transmitting members 18a and 18b for transmitting the lights emitted from the LEDs 33; and cooling members 4a and 4b made of aluminum and provided to directly contact with the heating sources 17a and 17b, respectively. The heating sources 17a and 17b include a plurality of LED arrays having supporters 32 made of AlN, each having one surface on which the LEDs 33 are adhered by using a silver paste 56; and other surface on which thermal diffusion members 50 made of copper are adhered by using a solder 57. The LED arrays 34 are fixed to the cooling member 4a(4b) by using screws via a silicon grease.

    摘要翻译： 退火装置包括设置成面向晶片W的加热源17a和17b，具有向该晶片发光的LED 33的加热源17a和17b; 用于透射从LED 33发射的光的透光构件18a和18b; 以及由铝制成并分别与加热源17a和17b直接接触的冷却构件4a和4b。 加热源17a和17b包括多个LED阵列，其具有由AlN制成的支撑体32，每个具有一个表面，其上通过使用银膏56粘附LED 33; 和由铜制成的热扩散构件50的其他表面通过使用焊料57粘附在其上。LED阵列34通过使用经由硅油脂的螺钉固定到冷却构件4a（4b）。

    Annealing apparatus
    6.
    发明授权
    Annealing apparatus 有权
    退火设备

    公开(公告)号：US08897631B2

    公开(公告)日：2014-11-25

    申请号：US12864792

    申请日：2009-01-19

    申请人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Tomohiro Suzuki ,  Masatake Yoneda ,  Kazuhiro Ooya

    发明人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Tomohiro Suzuki ,  Masatake Yoneda ,  Kazuhiro Ooya

    IPC分类号： F27D11/12 ,  H01L21/67 ,  H01L21/324 ,  H01L21/268

    CPC分类号： H01L21/67109 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115

    摘要： An annealing apparatus includes heating sources provided to face a wafer W, the heating sources having LEDs emitting lights to the wafer; light-transmitting members for transmitting the lights emitted from the LEDs; and cooling members made of aluminum and provided to directly contact with the heating sources, respectively. The heating sources include a plurality of LED arrays having supporters made of AlN, each having one surface on which the LEDs are adhered by using a silver paste; and other surface on which thermal diffusion members made of copper are adhered by using a solder. The LED arrays are fixed to the cooling member by using screws via a silicone grease.

    摘要翻译： 退火装置包括设置成面向晶片W的加热源，所述加热源具有向晶片发光的LED; 用于透射从LED发射的光的透光构件; 和由铝制成的冷却部件，分别与加热源直接接触。 加热源包括具有由AlN制成的支撑体的多个LED阵列，每个具有一个表面，其上通过使用银膏粘合LED; 和由铜制成的热扩散构件的其他表面通过焊料粘合。 LED阵列通过使用硅脂润滑脂的螺丝固定在冷却部件上。

    Automatic control system and method using same
    7.
    发明授权
    Automatic control system and method using same 失效
    自动控制系统及使用方法

    公开(公告)号：US5880437A

    公开(公告)日：1999-03-09

    申请号：US917873

    申请日：1997-08-27

    申请人： Shigeru Kasai ,  Hiroyuki Miyashita

    发明人： Shigeru Kasai ,  Hiroyuki Miyashita

    IPC分类号： H01L21/205 ,  G05B13/02 ,  G05D23/19 ,  H01L21/31 ,  H05B1/02

    CPC分类号： G05B13/021 ,  G05D23/1917

    摘要： An automatic control system controls a controlled variable serving as an object 2 to be controlled so that the object 2 approaches a predetermined target value, by means of an optimum regulator 4. The automatic control system include: a gain setting section 48 for setting a gain; a comparing section 48 for comparing the target value with the controlled variable serving as the object; and a weight control section 50 for weighting the gain set by the gain setting section so as to increase the weight from 0 to 1 within a predetermined period of time and for deriving a corrected manipulated variable in response to the time when a difference between the target value and the controlled variable comes within a range of a predetermined percentage of the target value, so that the corrected manipulated variable is added to the manipulated variable derived by the optimum regulator. Thus, the gain is controlled so as to gradually increase only within a restricted range, so that it is possible to quickly and accurately control an object.

    摘要翻译： 自动控制系统通过最佳调节器4控制作为被控制对象2的受控变量，使物体2接近预定的目标值。自动控制系统包括：增益设定部分48，用于设定增益 ; 比较部分48，用于将目标值与用作对象的受控变量进行比较; 以及权重控制部分50，用于对由增益设置部分设置的增益进行加权，以在预定时间段内将权重从0增加到1，并且响应于目标之间的差异导出校正的操纵变量 值和受控变量在目标值的预定百分比的范围内，使得校正的操作变量被添加到由最佳调节器导出的操纵变量。 因此，增益被控制为仅在限制范围内逐渐增加，从而可以快速且准确地控制物体。

    Single wafer processing unit
    8.
    发明申请
    Single wafer processing unit 审中-公开
    单晶片处理单元

    公开(公告)号：US20080280048A1

    公开(公告)日：2008-11-13

    申请号：US12078332

    申请日：2008-03-28

    申请人： Shigeru Kasai ,  Hiroyuki Miyashita

    发明人： Shigeru Kasai ,  Hiroyuki Miyashita

    IPC分类号： B05C11/00 ,  B05D3/02

    CPC分类号： H01L21/67248 ,  H01L21/67115

    摘要： This invention relates to a thermal processing method including: a placing step of placing an object to be processed onto a stage arranged in a processing container that can be vacuumed; and a heating step of heating the object to be processed to a predetermined temperature. The object to be processed is heated under a state in which a temperature distribution is maintained in such a manner that a temperature at a central portion of the object to be processed is high while a temperature at a peripheral portion of the object to be processed is low, during at least a part of the heating step.

    摘要翻译： 本发明涉及一种热处理方法，包括：放置步骤，将待处理物体放置在布置在可被抽真空的处理容器中的台上; 以及将被处理物体加热到规定温度的加热工序。 待加工对象在保持温度分布的状态下被加热，使得待处理物体的中心部分的温度高，而被加工物的周边部分的温度为 在加热步骤的至少一部分期间为低。

    Phase shift photomask, phase shift photomask blank, and process for fabricating them
    9.
    发明授权
    Phase shift photomask, phase shift photomask blank, and process for fabricating them 失效
    相移光掩模，相移光掩模坯料及其制造工艺

    公开(公告)号：US5702847A

    公开(公告)日：1997-12-30

    申请号：US453079

    申请日：1995-05-30

    申请人： Norihiro Tarumoto ,  Hiroyuki Miyashita ,  Yukio Iimura ,  Koichi Mikami

    发明人： Norihiro Tarumoto ,  Hiroyuki Miyashita ,  Yukio Iimura ,  Koichi Mikami

    IPC分类号： G03F1/00 ,  G03F9/00

    CPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/30 ,  G03F1/32

    摘要： The invention relates to a phase shift photomask in which the peripheral region portion of a phase shift layer is removed by a relatively simple procedure and which has no or little defect and is inexpensive, a blank therefor, and a process for fabricating them. The process includes the steps of forming phase shift layer 23 all over the surface of one side of transparent substrate 21, and immersing only the peripheral region of substrate 21 in etching solution 25 to etch away the peripheral region of phase shift layer 23, whereby phase shift layer 27 is confined within an area smaller than that of substrate 21.

    摘要翻译： 本发明涉及一种相移光掩模，其中通过相对简单的程序除去相移层的外围区域部分，并且没有或很少缺陷，并且便宜，其空白和其制造方法。 该方法包括在透明基板21的整个表面的整个表面上形成相移层23，并且仅将基板21的周边区域浸入蚀刻溶液25中以蚀刻掉相移层23的周边区域，由此相位 位移层27被限制在比衬底21的面积小的区域内。

    Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
    10.
    发明授权
    Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting 失效
    半色调相移光掩模包括单层半色调遮光和相移

    公开(公告)号：US5604060A

    公开(公告)日：1997-02-18

    申请号：US357350

    申请日：1994-12-16

    申请人： Hiroyuki Miyashita ,  Sachiko Ishikita ,  Koichi Mikami

    发明人： Hiroyuki Miyashita ,  Sachiko Ishikita ,  Koichi Mikami

    IPC分类号： G03F1/32 ,  G03F9/00

    CPC分类号： G03F1/32

    摘要： The invention provides a halftone phase shift photomask that is of much more simplified structure and so can be fabricated much more easily, which comprises a transparent substrate 10 and a single halftone light-blocking and phase shift layer 11 that is formed on the surface thereof according to a predetermined pattern and is made up of a material of homogeneous composition, characterized in that:said single halftone light-blocking and phase shift layer has a film thickness d that is virtually equal to a value defined byd=.lambda./{2(n-1)}where .lambda. is the wavelength at which the photomask is used, and n is the index of refraction of the single layer, or that is an odd-numbered multiple of said value, and has a transmittance lying substantially in the range of 5 to 30%. The layer 11 may be made up of any of CrO.sub.x, CrN.sub.x, CrO.sub.x N.sub.y and CrO.sub.x N.sub.y C.sub.z.

    摘要翻译： 本发明提供了一种半色调相移光掩模，其结构非常简化，因此可以更容易地制造，其包括透明基板10和在其表面上形成的单个半色调光阻挡和相移层11，根据 由均匀组成的材料构成，其特征在于：所述单个半色调遮光和相移层的膜厚d实质上等于由d =λ/ {2（ n-1）}其中λ是使用光掩模的波长，n是单层的折射率，或者是所述值的奇数倍，并且具有基本上在该范围内的透射率 为5〜30％。 层11可以由CrO x，CrN x，CrO x N y和CrO x N y C z中的任一种构成。