摘要:
An optical module, which is arranged in an optical transmission path, includes an optical amplifying unit configured with a semiconductor, wherein the optical amplifying unit amplifies light input from the optical transmission path, and an optical element configured with a semiconductor, wherein the optical element propagates the light amplified by the optical amplifying unit to the optical transmission path.
摘要:
An optical module, which is arranged in an optical transmission path, includes an optical amplifying unit configured with a semiconductor, wherein the optical amplifying unit amplifies light input from the optical transmission path, and an optical element configured with a semiconductor, wherein the optical element propagates the light amplified by the optical amplifying unit to the optical transmission path.
摘要:
A directional coupler type optical modulator with traveling-wave electrodes includes a first directional coupler region, a waveguide wave coupling region, a second directional coupler region, and a set of noncrossing traveling-wave electrodes disposed along the outside of the waveguides. The electrodes of each directional coupler are connected to the traveling-wave electrodes via air-bridges. The waveguide structures are of the P-I-N type having a common N-type conducting layer which provides delta-beta operation of the directional coupler, and both cross and bar states are controlled by a single input signal.
摘要:
A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.
摘要:
A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.
摘要:
A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. A bonding layer is formed overlying the silver layer to make an electrical connection to the silver layer. The silver layer may be thin and transparent or thicker (greater than 20 nm) and reflective.
摘要:
A method and a system for monitoring specific channels in a WDM system involve splitting a WDM signal into multiple parallel signals, filtering the parallel signals with corresponding individually tunable filters in order to pass specific channels to each filter, and then detecting the presence of passed channels with dedicated detectors that correspond to the tunable filters. In a preferred embodiment, the initial WDM signal is demultiplexed by wavelength into multiple different transmission groups and each filter can be individually tuned over a channel range that corresponds to the range of channels within the transmission group that is directed to the filter. The preferred individually tunable filters are vertical cavity filters formed utilizing semiconductor wafer processing techniques, and the preferred photodetectors are simple low cost single-cell photodetectors.
摘要:
A method for forming a metal layer with a positive pattern on a plastic sheet or plate substrate which comprises printing an oil-soluble, water-insoluble ink on the substrate to provide a negative pattern, forming a metal layer on said substrate by dry metal plating, immersing the substrate in a hydrocarbon having 6-17 carbon atoms, preferably kerosene, and removing the ink layer and metal layer thereon by applying supersonic vibration to the substrate in the kerosene.
摘要:
An optical coupling structure that interfaces between optical devices mounted on a substrate and optical waveguides formed in the substrate. A manufacturing method includes preparing a wafer formed on an inorganic solid material on a dicing tape and cutting the back surface of the wafer to form substantially angled portions using a dicing blade having a point angle. The dicing tape is stripped from the wafer and the wafer is separated at the valleys between the substantially angled portions to obtain an optical coupling element. The obtained optical coupling element is a three-dimensional polyhedral light-reflecting member having a mirror surface corresponding to a surface of the wafer. The obtained optical coupling element is inserted into a trench that opens, substantially perpendicular to an optical waveguide of an optical transmission substrate, in the main surface of the optical transmission substrate to provide a structure for optical coupling with the outside.
摘要:
A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.