公开(公告)号：US09030582B2

公开(公告)日：2015-05-12

申请号：US13983975

申请日：2011-02-08

申请人： Shigetoshi Sugawa ,  Hideki Tominaga ,  Kenji Takubo ,  Yasushi Kondo

发明人： Shigetoshi Sugawa ,  Hideki Tominaga ,  Kenji Takubo ,  Yasushi Kondo

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/378

CPC分类号： H04N5/357 ,  H04N5/3575 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/378

摘要： A transistor (24) which acts as a load-current source for a source follower amplifying transistor (22) for outputting a pixel signal to a pixel output line (40) is provided in each picture element (10), whereby a high bias current is prevented from passing through the high-resistance pixel output line (40), so that a variation in an offset voltage among picture elements is suppressed. Inclusion of the high-resistance pixel output line (40) into the source follower amplification circuit is also avoided, whereby the gain characteristics are prevented from deterioration. Thus, the S/N ratio of the picture element is improved so as to enhance the quality of the images.

摘要翻译： 作为用于将像素信号输出到像素输出线（40）的源极跟随放大晶体管（22）的负载电流源的晶体管（24）设置在每个像素（10）中，由此高偏置电流 被阻止通过高电阻像素输出线（40），从而抑制像素之间的偏移电压的变化。 还避免了将高电阻像素输出线（40）包括在源极跟随器放大电路中，从而防止增益特性的劣化。 因此，提高了像素的S / N比，从而提高了图像的质量。

公开(公告)号：US20120112255A1

公开(公告)日：2012-05-10

申请号：US13382878

申请日：2010-06-23

申请人： Yasushi Kondo ,  Hideki Tominaga ,  Kenji Takubo ,  Ryuta Hirose ,  Shigetoshi Sugawa ,  Hideki Mutoh

发明人： Yasushi Kondo ,  Hideki Tominaga ,  Kenji Takubo ,  Ryuta Hirose ,  Shigetoshi Sugawa ,  Hideki Mutoh

IPC分类号： H01L31/02

CPC分类号： H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461

摘要： A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.

摘要翻译： 在嵌入式光电二极管的光接收表面的边缘处形成浮动扩散区，其中位于其间的传输栅电极。 在大致扇形的光接收表面上形成有以FD区域为中心的径向延伸部分的第一区域和位于第一区域外部的第二区域。 引入导电类型与要在第一区域中收集的信号电荷相同的掺杂剂，由此由于三维场效应，产生用于使信号从径向延伸部分向中心移动的电场。 结果，电荷转移时间减少。 此外，由于随后阶段的电路元件可以放置在与浮动扩散区域相邻的位置，所以可以减小浮动扩散区域的寄生电容，并且可以获得高灵敏度的元件。

公开(公告)号：US08530947B2

公开(公告)日：2013-09-10

申请号：US13382878

申请日：2010-06-23

申请人： Yasushi Kondo ,  Hideki Tominaga ,  Kenji Takubo ,  Ryuta Hirose ,  Shigetoshi Sugawa ,  Hideki Mutoh

发明人： Yasushi Kondo ,  Hideki Tominaga ,  Kenji Takubo ,  Ryuta Hirose ,  Shigetoshi Sugawa ,  Hideki Mutoh

IPC分类号： H01L27/148

CPC分类号： H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461

摘要： A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.

摘要翻译： 在嵌入式光电二极管的光接收表面的边缘处形成浮动扩散区，其中位于其间的传输栅电极。 在大致扇形的光接收表面上形成有以FD区域为中心的径向延伸部分的第一区域和位于第一区域外部的第二区域。 引入导电类型与要在第一区域中收集的信号电荷相同的掺杂剂，由此由于三维场效应，产生用于使信号从径向延伸部分向中心移动的电场。 结果，电荷转移时间减少。 此外，由于随后阶段的电路元件可以放置在与浮动扩散区域相邻的位置，所以可以减小浮动扩散区域的寄生电容，并且可以获得高灵敏度的元件。

公开(公告)号：US20130308023A1

公开(公告)日：2013-11-21

申请号：US13983975

申请日：2011-02-08

申请人： Shigetoshi Sugawa ,  Hideki Tominaga ,  Kenji Takubo ,  Yasushi Kondo

发明人： Shigetoshi Sugawa ,  Hideki Tominaga ,  Kenji Takubo ,  Yasushi Kondo

IPC分类号： H04N5/357 ,  H04N5/378

CPC分类号： H04N5/357 ,  H04N5/3575 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/378

摘要： A transistor (24) which acts as a load-current source for a source follower amplifying transistor (22) for outputting a pixel signal to a pixel output line (40) is provided in each picture element (10), whereby a high bias current is prevented from passing through the high-resistance pixel output line (40), so that a variation in an offset voltage among picture elements is suppressed. Inclusion of the high-resistance pixel output line (40) into the source follower amplification circuit is also avoided, whereby the gain characteristics are prevented from deterioration. Thus, the S/N ratio of the picture element is improved so as to enhance the quality of the images.

摘要翻译： 作为用于将像素信号输出到像素输出线（40）的源极跟随放大晶体管（22）的负载电流源的晶体管（24）设置在每个像素（10）中，由此高偏置电流 被阻止通过高电阻像素输出线（40），从而抑制像素之间的偏移电压的变化。 还避免了将高电阻像素输出线（40）包括在源极跟随器放大电路中，从而防止增益特性的劣化。 因此，提高了像素的S / N比，从而提高了图像的质量。

公开(公告)号：US09420210B2

公开(公告)日：2016-08-16

申请号：US12996969

申请日：2009-06-10

申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

IPC分类号： H04N5/235 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/148 ,  H04N5/357

CPC分类号： H04N5/378 ,  H01L27/14843 ,  H04N5/3575 ,  H04N5/37452

摘要： A burst reading memory section (200) and continuous reading memory section (210) are independently provided for each of the two-dimensionally arrayed pixels (10). The burst reading memory section (200) has capacitors (25001-25104) capable of holding a plurality of signals. The continuous reading memory section (210) has only one capacitor 213. Signal output lines for the two memory sections are separately provided. When a signal produced by photoelectric conversion at the pixel (10) is outputted on a pixel output line (14), the signal can be simultaneously written in the capacitors at both memory sections (200, 201), after which the signals can be separately extracted to the outside at different timings. Therefore, a series of images taken at extremely short intervals of time during a short period of time can be obtained at an arbitrary timing without impeding a continuous image-acquiring operation at a low frame rate. Accordingly, both an ultrahigh-speed imaging operation having a limitation on the number of frames and an imaging that is rather slow but has no limitation on the number of frames can be simultaneously performed.

摘要翻译： 对于二维排列的像素（10）中的每一个，独立地提供突发读取存储器部分（200）和连续读取存储器部分（210）。 脉冲串读取存储部分（200）具有能够保持多个信号的电容器（25001-25104）。 连续读取存储部分（210）仅具有一个电容器213.两个存储器部分的信号输出线被单独提供。 当在像素（10）上通过光电转换产生的信号在像素输出线（14）上输出时，该信号可以同时写入两个存储部分（200,201）的电容器中，之后信号可以分开 在不同的时间提取到外面。 因此，可以在任意的时刻以非常短的时间间隔拍摄的一系列图像，而不会以低帧率阻碍连续的图像获取操作。 因此，可以同时执行对帧数量的限制和相当慢但对帧数量没有限制的成像的超高速成像操作。

公开(公告)号：US08541731B2

公开(公告)日：2013-09-24

申请号：US12996613

申请日：2009-06-10

申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

IPC分类号： H01L27/146 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14643 ,  H04N5/355 ,  H04N5/378

摘要： A pixel output line is provided for each of the pixels two-dimensionally arrayed in a pixel area. The pixel output lines are extended to a memory area, and a memory unit is connected to each of those lines. The memory unit includes a writing-side transistor, a reading-side transistor and a plurality of memory sections for holding signals for 104 image frames. A photocharge storage operation is simultaneously performed at all the pixels, and the thereby produced signals are outputted to the pixel output lines. In the memory unit, with the writing-side transistor in the ON state, the sampling transistor of a different memory section is sequentially turned on for each exposure cycle so as to sequentially hold a signal in the capacitor of each memory section. After a burst imaging operation is completed, all the pixel signals are sequentially read. Unlike CCDs, the present device does not simultaneously drive all gate loads, so that it can be driven at high speeds with low power consumption. Thus, the burst imaging can be performed at higher speeds than ever before.

摘要翻译： 为像素区域中二维排列的每个像素提供像素输出线。 像素输出线被扩展到存储区域，并且存储器单元连接到这些行中的每一行。 存储单元包括写入侧晶体管，读取侧晶体管和用于保持104个图像帧的信号的多个存储器部分。 在所有像素处同时执行光电荷存储操作，并且由此产生的信号被输出到像素输出线。 在存储器单元中，在写入侧晶体管处于导通状态的情况下，对于每个曝光周期，不同存储器部分的采样晶体管顺序地导通，以便顺序地保持每个存储器部分的电容器中的信号。 在突发图像操作完成之后，依次读取所有像素信号。 与CCD不同，本装置不会同时驱动所有栅极负载，因此可以以低功耗高速驱动。 因此，可以以比以往更高的速度执行突发成像。

公开(公告)号：US08269838B2

公开(公告)日：2012-09-18

申请号：US12676532

申请日：2008-09-04

申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

IPC分类号： H04N5/228 ,  H04N5/335

CPC分类号： H04N5/378 ,  H04N5/3415 ,  H04N5/374

摘要： A pixel output line (14) is independently provided for each of the pixels arranged in a two-dimensionally array within a pixel area so that pixel signals can be sequentially written in a plurality of memory sections (22) through the pixel output lines (14). When a plurality of frames of pixel signals are held in the memory sections (22), the pixel signals corresponding to two arbitrarily selected frames are read and respectively stored in sample-and-hold circuits (61 and 62), and their difference is obtained. Then, the difference signals corresponding to a predetermined range of the image are integrated, and the integrated value is compared with a threshold. If the integrated value exceeds the threshold, it is presumed that a change in an imaging object has occurred, and a pulse generation circuit (66) generates a trigger signal. By controlling the discontinuation and other imaging actions according to this trigger signal, it is possible to correctly take high-speed images of the situation before or after the occurrence of an objective phenomenon.

摘要翻译： 像素输出线（14）被独立地设置在像素区域内以二维阵列布置的每个像素，使得可以通过像素输出线（14）将像素信号顺序地写入多个存储器部分（22） ）。 当多个像素信号帧被保持在存储部分（22）中时，对应于两个任意选择的帧的像素信号被读取并分别存储在采样和保持电路（61和62）中，并且获得它们的差异 。 然后，对应于图像的预定范围的差分信号被积分，并将积分值与阈值进行比较。 如果积分值超过阈值，则假设成像对象发生变化，脉冲发生电路（66）产生触发信号。 通过根据该触发信号控制中断和其他成像动作，可以在目标现象发生之前或之后正确地拍摄情况。

公开(公告)号：US20110085066A1

公开(公告)日：2011-04-14

申请号：US12996969

申请日：2009-06-10

申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

IPC分类号： H04N5/335

CPC分类号： H04N5/378 ,  H01L27/14843 ,  H04N5/3575 ,  H04N5/37452

摘要： A burst reading memory section (200) and continuous reading memory section (210) are independently provided for each of the two-dimensionally arrayed pixels (10). The burst reading memory section (200) has capacitors (25001-25104) capable of holding a plurality of signals. The continuous reading memory section (210) has only one capacitor 213. Signal output lines for the two memory sections are separately provided. When a signal produced by photoelectric conversion at the pixel (10) is outputted on a pixel output line (14), the signal can be simultaneously written in the capacitors at both memory sections (200, 201), after which the signals can be separately extracted to the outside at different timings. Therefore, a series of images taken at extremely short intervals of time during a short period of time can be obtained at an arbitrary timing without impeding a continuous image-acquiring operation at a low frame rate. Accordingly, both an ultrahigh-speed imaging operation having a limitation on the number of frames and an imaging that is rather slow but has no limitation on the number of frames can be simultaneously performed.

摘要翻译： 对于二维排列的像素（10）中的每一个，独立地提供突发读取存储器部分（200）和连续读取存储器部分（210）。 脉冲串读取存储部分（200）具有能够保持多个信号的电容器（25001-25104）。 连续读取存储部分（210）仅具有一个电容器213.两个存储器部分的信号输出线被单独提供。 当在像素（10）上通过光电转换产生的信号在像素输出线（14）上输出时，该信号可以同时写入两个存储器部分（200,201）的电容器中，之后信号可以分开 在不同的时间提取到外面。 因此，可以在任意的时刻以非常短的时间间隔拍摄的一系列图像，而不会以低帧率阻碍连续的图像获取操作。 因此，可以同时执行对帧数量的限制和相当慢但对帧数量没有限制的成像的超高速成像操作。

公开(公告)号：US20100188538A1

公开(公告)日：2010-07-29

申请号：US12676505

申请日：2008-09-04

申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

IPC分类号： H04N5/335

CPC分类号： H04N5/35572 ,  H04N5/3559 ,  H04N5/3575 ,  H04N5/3742 ,  H04N5/37452 ,  H04N5/378

摘要： An independent pixel output line (14) is provided for each of two-dimensionally arranged pixels (10) within a pixel area (2a). A plurality of memory sections are connected to each pixel output line (14). In a continuous reading mode, photocharge storage is simultaneously performed at all the pixels, and signals are collectively transferred from the pixels (10) through the pixel output lines (14) to the memory sections, after which the signals held in the memory sections are sequentially read and outputted. In a burst reading mode, the operations of simultaneously storing photocharges at all the pixels and collectively transferring signals from each pixel (10) through the pixel output line (14) to the memory sections are sequentially performed for each of the memory sections to hold signals corresponding to a plurality of frames. When a imaging halt command is given, the holding of new signals is halted, and a plurality of frames of image signals held in the memory sections at that point in time are sequentially read and outputted. Thus, both an ultrahigh-speed imaging operation with a limitation on the number of frames and an imaging mode that is rather slow but has no limitation on the number of frames can be performed.

摘要翻译： 为像素区域（2a）内的二维排列的像素（10）中的每一个提供独立的像素输出线（14）。 多个存储器部分连接到每个像素输出线（14）。 在连续读取模式下，在所有像素处同时执行光电荷存储，并且将信号从像素（10）通过像素输出线（14）共同转移到存储器部分，之后保存在存储器部分中的信号为 依次读取并输出。 在突发读取模式下，对于每个存储器部分，顺序地执行将所有像素同时存储光电荷并将每个像素（10）的信号通过像素输出线（14）共同传送到存储器部分的操作，以保持信号 对应于多个帧。 当给出成像暂停命令时，停止新信号的保持，并且顺序读取并输出在该时间点保持在存储器部分中的多个图像信号帧。 因此，可以执行具有对帧数量的限制的超高速成像操作和相当慢但对帧数量没有限制的成像模式。

公开(公告)号：US20100176423A1

公开(公告)日：2010-07-15

申请号：US12676520

申请日：2008-09-04

申请人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

发明人： Shigetoshi Sugawa ,  Yasushi Kondo ,  Hideki Tominaga

IPC分类号： H01L31/14 ,  H01L31/18 ,  H01L31/0352

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/378

摘要： A floating diffusion (331) is created substantially at center of the light-receiving surface of an embedded photodiode (31), with a gate electrode of a transfer transistor (32) surrounding the floating diffusion. The concentration (or depth) of impurities in a p+-type semiconductor region, n-type semiconductor region or p-well region is changed in an inclined form so that a potential gradient being inclined downwards from the circumference to the center is created when an appropriate bias voltage is applied to the pn junction. The photocharges produced by incident light are rapidly moved along the potential gradient toward the center. Even in the case where the photocharge storage time is short, the photocharges can be efficiently collected since the maximum moving distance from the circumference of the photodiode (31) to the floating diffusion (331). Thus, the photocharges produced by the photodiode (31) are efficiently utilized, whereby the detection sensitivity is improved.

摘要翻译： 基本上在嵌入式光电二极管（31）的光接收表面的中心处形成浮动扩散（331），其中传输晶体管（32）的栅电极围绕浮动扩散。 p +型半导体区域，n型半导体区域或p阱区域中的杂质的浓度（或深度）以倾斜形式改变，使得当从圆周向中心倾斜的电位梯度当 适当的偏置电压施加到pn结。 由入射光产生的光电荷沿电势梯度快速移动到中心。 即使在光电荷存储时间短的情况下，由于从光电二极管（31）的周边到浮动扩散（331）的最大移动距离，也可以有效地收集光电荷。 因此，有效地利用由光电二极管（31）产生的光电荷，从而提高检测灵敏度。