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公开(公告)号：US08017962B2
公开(公告)日：2011-09-13
申请号：US12193271
申请日：2008-08-18
申请人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
发明人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译： 发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩散层和微型或纳米粗糙结构。 导热粘合剂层设置在导热基板上。 外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。 电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。 微结构或纳米粗糙结构设置在外延层的第一半导体层上。 此外，还公开了一种LED装置的制造方法。
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公开(公告)号：US20110300650A1
公开(公告)日：2011-12-08
申请号：US13207889
申请日：2011-08-11
申请人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
发明人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译： 发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩散层和微型或纳米粗糙结构。 导热粘合剂层设置在导热基板上。 外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。 电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。 微结构或纳米粗糙结构设置在外延层的第一半导体层上。 此外，还公开了一种LED装置的制造方法。
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公开(公告)号：US08153461B2
公开(公告)日：2012-04-10
申请号：US13207889
申请日：2011-08-11
申请人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
发明人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译： 发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩展层和微型或纳米粗糙结构。 导热粘合剂层设置在导热基板上。 外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。 电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。 微结构或纳米粗糙结构设置在外延层的第一半导体层上。 此外，还公开了一种LED装置的制造方法。
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4.发明申请公开(公告)号：US20080003707A1
公开(公告)日：2008-01-03
申请号：US11501015
申请日：2006-08-09
申请人： Cheng-Yi Liu , Chia-Hsien Chou , Ching-Liang Lin
发明人： Cheng-Yi Liu , Chia-Hsien Chou , Ching-Liang Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： The present invention provides a method to fabricate a diode whose heat stability is improved. The diode has a layer of high reflective ohmic contact and an alloy metal is used in the layer. With the alloy metal used in the layer, the heat stability of the diode is improved.
摘要翻译： 本发明提供一种制造热稳定性提高的二极管的方法。 二极管具有高反射欧姆接触层，在该层中使用合金金属。 使用该层中使用的合金金属，二极管的热稳定性得到改善。
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公开(公告)号：US20070010035A1
公开(公告)日：2007-01-11
申请号：US11425149
申请日：2006-06-20
申请人： Cheng-Yi Liu , Shih-Chieh Hsu , Ching-Liang Lin , Yong-Syun Lin
发明人： Cheng-Yi Liu , Shih-Chieh Hsu , Ching-Liang Lin , Yong-Syun Lin
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/42
摘要： A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a first transparent conductive layer is formed on the second type doped semiconductor layer. Next, a substitution substrate having a second transparent conductive layer formed thereon is provided. Then, a wafer bonding process is performed on the epitaxy substrate and the substitution substrate, so as to bond the first transparent conductive layer and the second transparent conductive layer. Finally, the epitaxy substrate is removed. As mentioned above, an LED with better reliability is fabricated according to the method provided by the present invention. Moreover, the present invention further provides an LED.
摘要翻译： 提供一种制造发光二极管（LED）的方法。 首先，在外延基板上依次形成第一掺杂半导体层，发光层和第二掺杂半导体层。 然后，在第二型掺杂半导体层上形成第一透明导电层。 接下来，提供其上形成有第二透明导电层的置换基板。 然后，在外延基板和置换基板上进行晶片接合工艺，以便将第一透明导电层和第二透明导电层接合。 最后，除去外延衬底。 如上所述，根据本发明提供的方法制造具有更好可靠性的LED。 此外，本发明还提供一种LED。
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公开(公告)号：US20060255348A1
公开(公告)日：2006-11-16
申请号：US11164133
申请日：2005-11-11
申请人： Cheng-Yi Liu , Shih-Chieh Hsu
发明人： Cheng-Yi Liu , Shih-Chieh Hsu
CPC分类号： H01L33/0079
摘要： A method for fabricating a light emitting diode (LED) is provided. A first-type doped semiconductor layer, a light emitting layer and a second-type doped semiconductor layer are formed on an epitaxy substrate sequentially. Then, a gold layer is formed on the second-type doped semiconductor layer. Next, a bonding substrate is provided. The bonding substrate includes a silicon substrate and a germanium-contained layer disposed on the silicon substrate. Then, a bonding process is performed on the bonding substrate and the gold layer. Next, the epitaxy substrate is removed. Accordingly, a LED with better reliability and light-emitting efficiency can be made. Moreover, a LED is also provided.
摘要翻译： 提供一种制造发光二极管（LED）的方法。 依次在外延基板上形成第一掺杂半导体层，发光层和第二掺杂半导体层。 然后，在第二掺杂半导体层上形成金层。 接下来，提供接合基板。 接合基板包括硅基板和设置在硅基板上的含锗层。 然后，对接合基板和金层进行接合处理。 接下来，除去外延基板。 因此，可以实现具有更好的可靠性和发光效率的LED。 此外，还提供了LED。
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公开(公告)号：US20050089225A1
公开(公告)日：2005-04-28
申请号：US10628511
申请日：2003-07-29
申请人： Chin-Chen Chang , Cheng-Yi Liu , I-Yen Chen
发明人： Chin-Chen Chang , Cheng-Yi Liu , I-Yen Chen
CPC分类号： G06K9/00389 , E05F15/00 , E05Y2400/852 , E05Y2400/86 , G06K9/00375 , G06K9/48 , G06K9/6204
摘要： A method for aligning gesture features of image is disclosed. An input gesture image is captured, and then a closed curve formed by a binary contour image of the gesture image is determined by processing the gesture image. A curvature scale space (CSS) image of the gesture image is drawn based on the closed curve. A convolution operation is performed with respect to the sequence of a coordinate-peak set formed by the CSS image and a predefined function to designate the coordinate with maximal value of integration as a basis point for obtaining a feature parameter of the gesture image. Finally, comparing the feature parameter of the gesture image with each feature parameter of a plurality of reference gesture shapes, thereby determining a gesture shape corresponding to the gesture image.
摘要翻译： 公开了一种用于对准图像的姿势特征的方法。 捕获输入手势图像，然后通过处理手势图像来确定由手势图像的二进制轮廓图像形成的闭合曲线。 基于闭合曲线绘制手势图像的曲率缩放空间（CSS）图像。 相对于由CSS图像形成的坐标 - 峰值集合的序列和预定义函数来执行卷积运算，以将具有最大积分值的坐标指定为用于获得手势图像的特征参数的基点。 最后，将手势图像的特征参数与多个参考手势形状的每个特征参数进行比较，从而确定与手势图像相对应的手势形状。
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公开(公告)号：US20080032280A1
公开(公告)日：2008-02-07
申请号：US11459329
申请日：2006-07-21
申请人： Yu-Jiun Chan , Jui-Chu Lin , Cheng-Yi Liu , Ming-Tak Ho
发明人： Yu-Jiun Chan , Jui-Chu Lin , Cheng-Yi Liu , Ming-Tak Ho
CPC分类号： C12Q1/701
摘要： The present invention provides methods and kits for detecting human cytomegalovirus. The present invention also provides oligonucleotides for detecting human cytomegalovirus.
摘要翻译： 本发明提供用于检测人巨细胞病毒的方法和试剂盒。 本发明还提供了用于检测人巨细胞病毒的寡核苷酸。
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公开(公告)号：US07265389B2
公开(公告)日：2007-09-04
申请号：US11163314
申请日：2005-10-14
申请人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
发明人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
CPC分类号： H01L33/0079 , H01L25/0753 , H01L2224/48091 , H01L2924/00014
摘要： A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.
摘要翻译： 提供一种制造发光二极管（LED）的方法。 在外延衬底上连续形成第一掺杂半导体层，发光层和第二掺杂半导体层; 在其上形成结合层; 用转移衬底与接合层接合; 去除外延衬底; 去除所述第一类型掺杂半导体层的一部分，所述发光层和所述第二类型掺杂半导体层，用于暴露所述结合层的一部分; 图案化所述接合层以形成彼此隔离的第一和第二接合部分，其中所述第一掺杂半导体层，所述发光层和所述第二掺杂半导体层设置在所述第一接合部分上; 在所述第一掺杂半导体层上形成焊盘; 以及形成用于电连接所述焊盘和所述第二接合部的导线。
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公开(公告)号：US20070122646A1
公开(公告)日：2007-05-31
申请号：US11307447
申请日：2006-02-08
申请人： Cheng-Yi Liu , Shen-Jie Wang
发明人： Cheng-Yi Liu , Shen-Jie Wang
CPC分类号： C22C13/00 , C22C13/02 , Y10T428/12708
摘要： A solder composition for reacting with aluminum is provided. The main alloying components in the solder includes tin (Sn), zinc (Zn) and chromium (Cr) with 0.01 wt % to 20 wt % zinc and 0.01 wt % to 20 wt % chromium.
摘要翻译： 提供了与铝反应的焊料组合物。 焊料中的主要合金成分包括含有0.01重量％至20重量％锌和0.01重量％至20重量％铬的锡（Sn），锌（Zn）和铬（Cr）。
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