公开(公告)号：US20130155554A1

公开(公告)日：2013-06-20

申请号：US13328755

申请日：2011-12-16

申请人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

发明人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

IPC分类号： H02H9/04

CPC分类号： H02H9/046

摘要： An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes a clamp unit and a control circuit. The clamp unit provides a discharging path from a first power line to a first ground line. The control circuit receives a first power voltage from the first power line and a second power voltage from a second power line. Wherein, when the first power voltage and the second power voltage are applied, the control circuit generates an isolation signal to disconnect the discharging path. When the first power voltage and the second power voltage are not applied, the control circuit generates a trigger signal according to an electrostatic signal from the first power line to turn on the discharging path.

摘要翻译： 提供一种静电放电保护装置。 静电放电保护装置包括钳位单元和控制电路。 夹持单元提供从第一电力线到第一接地线的放电路径。 控制电路从第一电力线接收第一电力电压和从第二电力线接收第二电力电压。 其中，当施加第一电源电压和第二电源电压时，控制电路产生隔离信号以断开放电路径。 当不施加第一电源电压和第二电源电压时，控制电路根据来自第一电力线的静电信号产生触发信号，以导通放电路径。

公开(公告)号：US08817436B2

公开(公告)日：2014-08-26

申请号：US13328755

申请日：2011-12-16

申请人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

发明人： Shih-Yu Wang ,  Chieh-Wei He ,  Yao-Wen Chang

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes a clamp unit and a control circuit. The clamp unit provides a discharging path from a first power line to a first ground line. The control circuit receives a first power voltage from the first power line and a second power voltage from a second power line. Wherein, when the first power voltage and the second power voltage are applied, the control circuit generates an isolation signal to disconnect the discharging path. When the first power voltage and the second power voltage are not applied, the control circuit generates a trigger signal according to an electrostatic signal from the first power line to turn on the discharging path.

摘要翻译： 提供一种静电放电保护装置。 静电放电保护装置包括钳位单元和控制电路。 夹持单元提供从第一电力线到第一接地线的放电路径。 控制电路从第一电力线接收第一电力电压和从第二电力线接收第二电力电压。 其中，当施加第一电源电压和第二电源电压时，控制电路产生隔离信号以断开放电路径。 当不施加第一电源电压和第二电源电压时，控制电路根据来自第一电力线的静电信号产生触发信号，以导通放电路径。

公开(公告)号：US08901649B2

公开(公告)日：2014-12-02

申请号：US13238858

申请日：2011-09-21

申请人： Chieh-Wei He ,  Shih-Yu Wang ,  Qi-An Xu

发明人： Chieh-Wei He ,  Shih-Yu Wang ,  Qi-An Xu

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/78 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66659

摘要： A semiconductor device, an electrostatic discharge protection device and manufacturing method thereof are provided. The electrostatic discharge protection device includes a gate, a gate dielectric layer, an N-type source region, an N-type drain region, an N-type doped region and a P-type doped region. The gate dielectric layer is disposed on a substrate. The gate is disposed on the gate dielectric layer. The N-type source region and the N-type drain region are disposed in the substrate at two sides of the gate, respectively. The N-type doped region is disposed in the N-type drain region and connects to the top of the N-type drain region. The P-type doped region is disposed under the N-type drain region and connects to the bottom of the N-type drain region.

摘要翻译： 提供半导体器件，静电放电保护器件及其制造方法。 静电放电保护器件包括栅极，栅极电介质层，N型源极区，N型漏极区，N型掺杂区和P型掺杂区。 栅介质层设置在基板上。 栅极设置在栅极电介质层上。 N型源极区域和N型漏极区域分别设置在栅极两侧的基板中。 N型掺杂区域设置在N型漏极区域中并且连接到N型漏极区域的顶部。 P型掺杂区域设置在N型漏极区域下方并连接到N型漏极区域的底部。

公开(公告)号：US20130201584A1

公开(公告)日：2013-08-08

申请号：US13368745

申请日：2012-02-08

申请人： Chieh-Wei He ,  Shih-Yu Wang

发明人： Chieh-Wei He ,  Shih-Yu Wang

IPC分类号： H02H9/04

CPC分类号： H02H9/046 ,  H01L27/0248

摘要： An electrostatic discharge (ESD) protection device including a modified lateral silicon-controlled rectifier (MLSCR) and a voltage control circuit is provided. The MLSCR has a first terminal, a second terminal and a control terminal connected to a first P+-type doped region, where the first terminal and the second terminal are electrically connected to a first line and a second line, respectively. The voltage control circuit is electrically connected to the first line, the second line and the control terminal. When an electrostatic pulse is appeared on the first line, the voltage control circuit provides a current path from the first line to the control terminal. When an input signal is supplied to the first line, the voltage control circuit receives a power voltage, and stops providing the current path according to the power voltage.

摘要翻译： 提供了包括改进的横向硅控整流器（MLSCR）和电压控制电路的静电放电（ESD）保护装置。 MLSCR具有连接到第一P +型掺杂区的第一端子，第二端子和控制端子，其中第一端子和第二端子分别电连接到第一线路和第二线路。 电压控制电路与第一线路，第二线路和控制终端电连接。 当第一行出现静电脉冲时，电压控制电路提供从第一行到控制端的电流路径。 当输入信号被提供给第一行时，电压控制电路接收电源电压，并根据电源电压停止提供电流路径。

公开(公告)号：US09166401B2

公开(公告)日：2015-10-20

申请号：US13368745

申请日：2012-02-08

申请人： Chieh-Wei He ,  Shih-Yu Wang

发明人： Chieh-Wei He ,  Shih-Yu Wang

IPC分类号： H02H9/00 ,  H02H9/04 ,  H01L27/02

CPC分类号： H02H9/046 ,  H01L27/0248

摘要： An electrostatic discharge (ESD) protection device including a modified lateral silicon-controlled rectifier (MLSCR) and a voltage control circuit is provided. The MLSCR has a first terminal, a second terminal and a control terminal connected to a first P+-type doped region, where the first terminal and the second terminal are electrically connected to a first line and a second line, respectively. The voltage control circuit is electrically connected to the first line, the second line and the control terminal. When an electrostatic pulse is appeared on the first line, the voltage control circuit provides a current path from the first line to the control terminal. When an input signal is supplied to the first line, the voltage control circuit receives a power voltage, and stops providing the current path according to the power voltage.

摘要翻译： 提供了包括改进的横向硅控整流器（MLSCR）和电压控制电路的静电放电（ESD）保护装置。 MLSCR具有连接到第一P +型掺杂区的第一端子，第二端子和控制端子，其中第一端子和第二端子分别电连接到第一线路和第二线路。 电压控制电路与第一线路，第二线路和控制终端电连接。 当第一行出现静电脉冲时，电压控制电路提供从第一行到控制端的电流路径。 当输入信号被提供给第一行时，电压控制电路接收电源电压，并根据电源电压停止提供电流路径。

公开(公告)号：US08987779B2

公开(公告)日：2015-03-24

申请号：US13304383

申请日：2011-11-24

申请人： Qi-An Xu ,  Chieh-Wei He

发明人： Qi-An Xu ,  Chieh-Wei He

IPC分类号： H01L29/73 ,  H01L27/02 ,  H01L29/74

CPC分类号： H01L27/0262 ,  H01L29/7436

摘要： An ESD protection device including second P-type wells, first P+-type doped regions, first N+-type doped regions and a P-type substrate having a first P-type well, an N-type well and an N-type deep well is provided. The second P-type wells are disposed in the N-type deep well. The first P+-type doped regions and the first N+-type doped regions are respectively disposed in the first P-type well, the N-type well and the second P-type wells in alternation. The first P+-type doped region in the N-type well and the N-type deep well are electrically connected to the first connection terminal. The doped regions in the first P-type well and the P-type substrate are electrically connected to the second connection terminal. The second P-type wells and the first N+-type doped regions therein form a diode string connected in series between the first N+-type doped region of the N-type well and the second connection terminal.

摘要翻译： 一种ESD保护装置，包括第二P型阱，第一P +型掺杂区，第一N +型掺杂区和具有第一P型阱，N型阱和N型阱的P型衬底 被提供。 第二个P型井设置在N型深井中。 第一P +型掺杂区和第一N +型掺杂区分别设置在第一P型阱，N型阱和第二P型阱中。 N型阱和N型深阱中的第一P +型掺杂区域电连接到第一连接端子。 第一P型阱和P型衬底中的掺杂区域电连接到第二连接端子。 第二P型阱和其中的第一N +型掺杂区形成串联连接在N型阱的第一N +型掺杂区和第二连接端之间的二极管串。

公开(公告)号：US20130134479A1

公开(公告)日：2013-05-30

申请号：US13304383

申请日：2011-11-24

申请人： Qi-An Xu ,  Chieh-Wei He

发明人： Qi-An Xu ,  Chieh-Wei He

IPC分类号： H01L29/73

CPC分类号： H01L27/0262 ,  H01L29/7436

摘要： An ESD protection device including second P-type wells, first P+-type doped regions, first N+-type doped regions and a P-type substrate having a first P-type well, an N-type well and an N-type deep well is provided. The second P-type wells are disposed in the N-type deep well. The first P+-type doped regions and the first N+-type doped regions are respectively disposed in the first P-type well, the N-type well and the second P-type wells in alternation. The first P+-type doped region in the N-type well and the N-type deep well are electrically connected to the first connection terminal. The doped regions in the first P-type well and the P-type substrate are electrically connected to the second connection terminal. The second P-type wells and the first N+-type doped regions therein form a diode string connected in series between the first N+-type doped region of the N-type well and the second connection terminal.

摘要翻译： 一种ESD保护装置，包括第二P型阱，第一P +型掺杂区，第一N +型掺杂区和具有第一P型阱，N型阱和N型阱的P型衬底 被提供。 第二个P型井设置在N型深井中。 第一P +型掺杂区和第一N +型掺杂区分别设置在第一P型阱，N型阱和第二P型阱中。 N型阱和N型深阱中的第一P +型掺杂区域电连接到第一连接端子。 第一P型阱和P型衬底中的掺杂区域电连接到第二连接端子。 第二P型阱和其中的第一N +型掺杂区形成串联连接在N型阱的第一N +型掺杂区和第二连接端之间的二极管串。

公开(公告)号：US20130099297A1

公开(公告)日：2013-04-25

申请号：US13277796

申请日：2011-10-20

申请人： Chieh-Wei He ,  Qi-An Xu

发明人： Chieh-Wei He ,  Qi-An Xu

IPC分类号： H01L27/092

CPC分类号： H01L27/0285

摘要： An electrostatic discharge protection device electrically connected between a pad and an internal circuit is provided and includes a capacitor, a first resistor, a voltage-drop element and an NMOS transistor. A first end of the capacitor is electrically connected to the pad. A first end of the first resistor is electrically connected to a second end of the capacitor, and a second end of the first resistor is electrically connected to ground. The NMOS transistor and the voltage-drop element are connected in series between the pad and the ground, a gate of the NMOS transistor is electrically connected to the second end of the capacitor, and a bulk of the NMOS transistor is electrically connected to the ground.

摘要翻译： 提供电连接在焊盘和内部电路之间的静电放电保护装置，其包括电容器，第一电阻器，降压元件和NMOS晶体管。 电容器的第一端电连接到焊盘。 第一电阻器的第一端电连接到电容器的第二端，并且第一电阻器的第二端电连接到地。 NMOS晶体管和降压元件串联连接在焊盘和接地之间，NMOS晶体管的栅极电连接到电容器的第二端，并且大部分NMOS晶体管电连接到地 。