公开(公告)号：US20120161205A1

公开(公告)日：2012-06-28

申请号：US13409798

申请日：2012-03-01

申请人： Shin HASHIMOTO ,  Tatsuya Tanabe ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

发明人： Shin HASHIMOTO ,  Tatsuya Tanabe ,  Katsushi Akita ,  Hideaki Nakahata ,  Hiroshi Amano

IPC分类号： H01L29/205

CPC分类号： H01L29/7787 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/872

摘要： A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0

摘要翻译： 提供III族氮化物半导体器件和III族氮化物半导体晶片。 III族氮化物半导体器件具有包含含有Al的III族氮化物基半导体的沟道层。 III族氮化物半导体器件可以增强二维电子气的迁移率并改善电流特性。 III族氮化物半导体晶片用于制造III族氮化物半导体器件。 III族氮化物半导体晶片包括由Al x Ga 1-x N（0

公开(公告)号：US20110049573A1

公开(公告)日：2011-03-03

申请号：US12732775

申请日：2010-03-26

申请人： Shin HASHIMOTO ,  Tatsuya TANABE ,  Katsushi AKITA ,  Hideaki NAKAHATA ,  Hiroshi AMANO

发明人： Shin HASHIMOTO ,  Tatsuya TANABE ,  Katsushi AKITA ,  Hideaki NAKAHATA ,  Hiroshi AMANO

IPC分类号： H01L29/205

CPC分类号： H01L29/7787 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/872

摘要： A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1−XN (0

摘要翻译： 提供III族氮化物半导体器件和III族氮化物半导体晶片。 III族氮化物半导体器件具有包含含有Al的III族氮化物基半导体的沟道层。 III族氮化物半导体器件可以增强二维电子气的迁移率并改善电流特性。 III族氮化物半导体晶片用于制造III族氮化物半导体器件。 III族氮化物半导体晶片包括由Al x Ga 1-x N（0

公开(公告)号：US20110278647A1

公开(公告)日：2011-11-17

申请号：US13038071

申请日：2011-03-01

申请人： Shin HASHIMOTO ,  Katsushi AKITA ,  Yoshiyuki YAMAMOTO ,  Masaaki KUZUHARA ,  Norimasa YAFUNE

发明人： Shin HASHIMOTO ,  Katsushi AKITA ,  Yoshiyuki YAMAMOTO ,  Masaaki KUZUHARA ,  Norimasa YAFUNE

IPC分类号： H01L29/778 ,  H01L21/20 ,  H01L21/335

CPC分类号： H01L29/66462 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7787

摘要： A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively. A concentration of impurity in the first portion is the same as that of impurity in the second portion, and the first and second electrodes is provided on the first and second regions, respectively. The first electrode includes a drain electrode or a source electrode. An aluminum composition of the first III-nitride semiconductor is not less than 0.16, and a bandgap of the second III-nitride semiconductor being larger than that of the first III-nitride semiconductor.

摘要翻译： III族氮化物半导体电子器件包括设置在衬底的主表面上的半导体层叠体，与半导体层叠体接触的第一电极和第二电极。 半导体层叠体包括沟道层和与沟道层形成结的阻挡层。 沟道层包括含有铝作为III族构成元素的第一III族氮化物半导体，并且阻挡层包含含有铝作为III族构成元素的第二III族氮化物半导体。 包括沿主表面布置的第一，第二和第三区域以及第三区域的半导体层叠体位于第一区域和第二区域之间。 阻挡层包括分别包括在第一至第三区域中的第一至第三部分。 第一部分中的杂质浓度与第二部分中的杂质浓度相同，第一和第二电极分别设置在第一和第二区域上。 第一电极包括漏电极或源电极。 第一III族氮化物半导体的铝组成不小于0.16，并且第二III族氮化物半导体的带隙大于第一III族氮化物半导体的带隙。