公开(公告)号：US11073756B2

公开(公告)日：2021-07-27

申请号：US16033503

申请日：2018-07-12

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Takuro Kosaka ,  Hideo Kaneko ,  Shigeo Irie ,  Naoki Kawaura

IPC分类号： G03F1/32 ,  G03F1/38 ,  G03F1/50 ,  G03F1/80

摘要： A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films.

公开(公告)号：US11061319B2

公开(公告)日：2021-07-13

申请号：US15996926

申请日：2018-06-04

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Takuro Kosaka ,  Tsuneo Terasawa ,  Shigeo Irie ,  Takahiro Kishita

IPC分类号： G03F1/38 ,  G03F1/84

摘要： A photomask blank is processed into a transmissive photomask for use in photolithography for forming a pattern on a recipient using exposure light. The photomask blank comprises a transparent substrate, a first film of a material which is etchable by chlorine/oxygen-based dry etching, and a second film of a silicon-containing material. The second film includes a layer having a refractive index n of at least 1.6 or an extinction coefficient k of at least 0.3 with respect to the wavelength of inspection light which is longer than the exposure light.

公开(公告)号：US10585345B2

公开(公告)日：2020-03-10

申请号：US15542296

申请日：2016-02-15

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Shigeo Irie ,  Takashi Yoshii ,  Keiichi Masunaga ,  Yukio Inazuki ,  Hideo Kaneko ,  Toyohisa Sakurada

IPC分类号： G06F1/00 ,  G03F1/32 ,  G03F1/46 ,  G03F1/38 ,  G03F1/58 ,  G03F1/80 ,  H01L21/033

摘要： A photomask blank (1) having: a transparent substrate (10); a first film (11) etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film (12) formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si—Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.