公开(公告)号：US20130147032A1

公开(公告)日：2013-06-13

申请号：US13313747

申请日：2011-12-07

申请人： Shin-Puu JENG ,  Wei-Cheng WU ,  Shang-Yun HOU ,  Chen-Hua YU ,  Tzuan-Horng LIU ,  Tzu-Wei CHIU ,  Kuo-Ching HSU

发明人： Shin-Puu JENG ,  Wei-Cheng WU ,  Shang-Yun HOU ,  Chen-Hua YU ,  Tzuan-Horng LIU ,  Tzu-Wei CHIU ,  Kuo-Ching HSU

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L22/34 ,  G01R31/2884 ,  H01L21/76885 ,  H01L22/32 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/10126 ,  H01L2224/13005 ,  H01L2224/16225 ,  H01L2924/12044 ,  H01L2924/15311 ,  H01L2924/00

摘要： The embodiments described above provide mechanisms for forming metal bumps on metal pads with testing pads on a packaged integrated circuit (IC) chip. A passivation layer is formed to cover the testing pads and possibly portions of metal pads. The passivation layer does not cover surfaces away from the testing pad region and the metal pad region. The limited covering of the testing pads and the portions of the metal pads by the passivation layer reduces interface resistance for a UBM layer formed between the metal pads and the metal bumps. Such reduction of interface resistance leads to the reduction of resistance of the metal bumps.

摘要翻译： 上述实施例提供了在封装的集成电路（IC）芯片上用测试焊盘在金属焊盘上形成金属凸块的机构。 形成钝化层以覆盖测试焊盘和可能的金属焊盘部分。 钝化层不覆盖远离测试焊盘区域和金属焊盘区域的表面。 通过钝化层测试焊盘和金属焊盘部分的有限覆盖减少了形成在金属焊盘和金属凸块之间的UBM层的界面电阻。 这种界面电阻的降低导致金属凸块的电阻降低。

公开(公告)号：US20100330788A1

公开(公告)日：2010-12-30

申请号：US12818362

申请日：2010-06-18

申请人： Chen-Hua YU ,  Kuo-Ching HSU ,  Chen-Shien CHEN ,  Ching-Wen HSIAO

发明人： Chen-Hua YU ,  Kuo-Ching HSU ,  Chen-Shien CHEN ,  Ching-Wen HSIAO

IPC分类号： H01L21/265 ,  H01L21/26 ,  H01L21/306 ,  H01L21/3205 ,  B32B7/12 ,  C23C14/34 ,  B24B1/00

CPC分类号： H01L21/187 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  Y10T428/1476

摘要： A thin wafer handling structure includes a semiconductor wafer, a release layer that can be released by applying energy, an adhesive layer that can be removed by a solvent, and a carrier, where the release layer is applied on the carrier by coating or laminating, the adhesive layer is applied on the semiconductor wafer by coating or laminating, and the semiconductor wafer and the carrier is bonded together with the release layer and the adhesive layer in between. The method includes applying a release layer on a carrier, applying an adhesive layer on a semiconductor wafer, bonding the carrier and the semiconductor wafer, releasing the carrier by applying energy on the release layer, e.g. UV or laser, and cleaning the semiconductor's surface by a solvent to remove any residue of the adhesive layer.

摘要翻译： 薄晶片处理结构包括半导体晶片，可通过施加能量释放的释放层，可通过溶剂除去的粘合剂层和载体，其中通过涂覆或层压将剥离层施加在载体上， 通过涂布或层压将粘合剂层施加在半导体晶片上，半导体晶片和载体与剥离层和粘合剂层粘合在一起。 该方法包括在载体上施加剥离层，在半导体晶片上施加粘合剂层，粘合载体和半导体晶片，通过在释放层上施加能量来释放载体，例如， UV或激光，并且通过溶剂清洁半导体的表面以除去粘合剂层的任何残余物。

公开(公告)号：US20100007287A1

公开(公告)日：2010-01-14

申请号：US12329444

申请日：2008-12-05

申请人： Kuo-Ching HSU

发明人： Kuo-Ching HSU

IPC分类号： H05B37/02 ,  H03K3/00

CPC分类号： H03K3/0322 ,  H03K17/16 ,  H04B15/02 ,  H04B2215/067

摘要： A driving method of a multi-channel driving circuit includes: receiving multiple driving signals corresponding to multiple to-be-driven elements, providing multiple randomized time delays, respectively adjusting the driving signals according to the randomized time delays to generate multiple delayed driving signals, and respectively driving the corresponding to-be-driven elements according to the delayed driving signals.

摘要翻译： 多通道驱动电路的驱动方法包括：接收与多个待驱动元件相对应的多个驱动信号，提供多个随机时间延迟，分别根据随机时间延迟调整驱动信号以产生多个延迟驱动信号， 并根据延迟的驱动信号分别驱动相应的被驱动元件。