公开(公告)号：US20090141765A1

公开(公告)日：2009-06-04

申请号：US12269363

申请日：2008-11-12

申请人： Shinichi KOHDA ,  Daisuke NAKAGAWA

发明人： Shinichi KOHDA ,  Daisuke NAKAGAWA

IPC分类号： H01S5/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3216 ,  H01S2304/04

摘要： A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer.

摘要翻译： 氮化物半导体激光器件具有III族氮化物半导体多层结构。 III族氮化物半导体多层结构包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层，p型半导体层为 通过将p侧引导层，与p侧引导层接触的p型电子阻挡层和与p型电子阻挡层接触的p型覆盖层从靠近 发光层。 p侧引导层通过层叠由含有Al的III族氮化物半导体层和不含Al的III族氮化物半导体层构成的层而形成。 p型覆层由含有Al的III族氮化物半导体构成，p型电子阻挡层由比p型覆层更大的Al组成的III族氮化物半导体构成。

公开(公告)号：US20120140785A1

公开(公告)日：2012-06-07

申请号：US13371490

申请日：2012-02-13

申请人： Daisuke NAKAGAWA ,  Yoshinori TANAKA ,  Masahiro Murayama ,  Takao FUJIMORI ,  Shinichi KOHDA

发明人： Daisuke NAKAGAWA ,  Yoshinori TANAKA ,  Masahiro Murayama ,  Takao FUJIMORI ,  Shinichi KOHDA

IPC分类号： H01S5/323

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L29/2003 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/3216 ,  H01S2301/173 ,  H01S2301/185

摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.

摘要翻译： 氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制 可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

公开(公告)号：US20160300323A1

公开(公告)日：2016-10-13

申请号：US15037757

申请日：2014-12-11

申请人： Daisuke NAKAGAWA ,  Norihiko KAWAI ,  Tomokazu SATO ,  Naokazu YOKOYA

发明人： Daisuke NAKAGAWA ,  Norihiko KAWAI ,  Tomokazu SATO ,  Naokazu YOKOYA

IPC分类号： G06T3/00

CPC分类号： G06T3/0062 ,  G06T2207/10004

摘要： An image generating apparatus for generating an output image based on an input panorama image, includes a parameter input unit inputting an output range parameter and a correction parameter, the output range parameter designating an output range in the panorama image, the correction parameter designating a correction part to be corrected in the output image; and an image correction unit correcting the correction part designated by the correction parameter in the output image. Further, the image correction unit calculates a similarity between the correction part and peripheral pixels and corrects the correction part based on the similarity and the peripheral pixels, and the output image is generated from the output range of the panorama image and is the panorama image corrected by the correction.

摘要翻译： 一种用于基于输入的全景图像生成输出图像的图像生成装置，包括输入输出范围参数和修正参数的参数输入单元，指定全景图像中的输出范围的输出范围参数，指定校正的校正参数 在输出图像中要校正的部分; 以及图像校正单元，校正由输出图像中的校正参数指定的校正部分。 此外，图像校正单元计算校正部分和周边像素之间的相似度，并且基于相似度和周边像素校正校正部分，并且从全景图像的输出范围生成输出图像，并且是校正的全景图像 通过修正。

公开(公告)号：US20190073743A1

公开(公告)日：2019-03-07

申请号：US16184187

申请日：2018-11-08

申请人： Daisuke NAKAGAWA ,  Norihiko Kawai ,  Tomokazu Sato ,  Naokazu Yokoya

发明人： Daisuke NAKAGAWA ,  Norihiko Kawai ,  Tomokazu Sato ,  Naokazu Yokoya

IPC分类号： G06T3/00

摘要： An image generating apparatus for generating an output image based on an input panorama image, includes a parameter input unit inputting an output range parameter and a correction parameter, the output range parameter designating an output range in the panorama image, the correction parameter designating a correction part to be corrected in the output image; and an image correction unit correcting the correction part designated by the correction parameter in the output image. Further, the image correction unit calculates a similarity between the correction part and peripheral pixels and corrects the correction part based on the similarity and the peripheral pixels, and the output image is generated from the output range of the panorama image and is the panorama image corrected by the correction.