公开(公告)号：US20060202761A1

公开(公告)日：2006-09-14

申请号：US11430241

申请日：2006-05-09

申请人： Shinichi Miyamoto ,  Yousuke Kuroiwa ,  Masaya Ueda ,  Hideo Fukuda ,  Hiroshi Yamaguchi ,  Masaki Taniguchi

发明人： Shinichi Miyamoto ,  Yousuke Kuroiwa ,  Masaya Ueda ,  Hideo Fukuda ,  Hiroshi Yamaguchi ,  Masaki Taniguchi

IPC分类号： H03F3/45

CPC分类号： H03F3/3432 ,  H03F3/08 ,  H03F2200/78

摘要： An amplifier unit is provided, with which the need for manufacturing a photoelectric conversion IC in Bi-CMOS process is eliminated, and relatively low process cost of the photoelectric conversion IC is achieved. The input section of a buffer (the base of a transistor Q5) is connected with a plurality of patterns of phase compensation circuits each including a resistor and a capacitor connected in series. A bipolar transistor (Q6) is interposed between a positive power supply line and a capacitor (C2) forming a capacitance of the phase compensation circuit. By switching on/off the bipolar transistor (Q6), the capacitance value and resistance value of the phase compensation circuit are switched. Since the bipolar transistor (Q6) is interposed between the capacitor (C2) and the positive power supply line, base current (Isw) acting as a switch signal does not affect the amplifier unit.

摘要翻译： 提供放大器单元，消除了在Bi-CMOS工艺中制造光电转换IC的需要，并且实现了光电转换IC的相对低的处理成本。 缓冲器（晶体管Q 5的基极）的输入部分与多个相位补偿电路相连，每个相位补偿电路均包括串联连接的电阻器和电容器。 在正电源线和形成相位补偿电路的电容的电容器（C 2）之间插入双极晶体管（Q6）。 通过接通/关断双极晶体管（Q 6），相位补偿电路的电容值和电阻值被切换。 由于双极晶体管（Q 6）插在电容器（C 2）和正电源线之间，所以作为开关信号的基极电流（Isw）不影响放大器单元。

公开(公告)号：US07391265B2

公开(公告)日：2008-06-24

申请号：US11430241

申请日：2006-05-09

申请人： Shinichi Miyamoto ,  Yousuke Kuroiwa ,  Masaya Ueda ,  Hideo Fukuda ,  Hiroshi Yamaguchi ,  Masaki Taniguchi

发明人： Shinichi Miyamoto ,  Yousuke Kuroiwa ,  Masaya Ueda ,  Hideo Fukuda ,  Hiroshi Yamaguchi ,  Masaki Taniguchi

IPC分类号： H03F3/45 ,  H03F3/08

CPC分类号： H03F3/3432 ,  H03F3/08 ,  H03F2200/78

摘要： An amplifier unit is provided, with which the need for manufacturing a photoelectric conversion IC in Bi-CMOS process is eliminated, and relatively low process cost of the photoelectric conversion IC is achieved. The input section of a buffer (the base of a transistor Q5) is connected with a plurality of patterns of phase compensation circuits each including a resistor and a capacitor connected in series. A bipolar transistor (Q6) is interposed between a positive power supply line and a capacitor (C2) forming a capacitance of the phase compensation circuit. By switching on/off the bipolar transistor (Q6), the capacitance value and resistance value of the phase compensation circuit are switched. Since the bipolar transistor (Q6) is interposed between the capacitor (C2) and the positive power supply line, base current (Isw) acting as a switch signal does not affect the amplifier unit.

摘要翻译： 提供放大器单元，消除了在Bi-CMOS工艺中制造光电转换IC的需要，并且实现了光电转换IC的相对低的处理成本。 缓冲器（晶体管Q 5的基极）的输入部分与多个相位补偿电路相连，每个相位补偿电路均包括串联连接的电阻器和电容器。 在正电源线和形成相位补偿电路的电容的电容器（C 2）之间插入双极晶体管（Q6）。 通过接通/关断双极晶体管（Q 6），相位补偿电路的电容值和电阻值被切换。 由于双极晶体管（Q 6）插在电容器（C 2）和正电源线之间，所以作为开关信号的基极电流（Isw）不影响放大器单元。

公开(公告)号：US07545156B2

公开(公告)日：2009-06-09

申请号：US11677077

申请日：2007-02-21

申请人： Yousuke Kuroiwa ,  Hideo Fukuda ,  Hiroshi Yamaguchi ,  Tetsuo Chato ,  Yuzo Shimizu ,  Masaki Taniguchi

发明人： Yousuke Kuroiwa ,  Hideo Fukuda ,  Hiroshi Yamaguchi ,  Tetsuo Chato ,  Yuzo Shimizu ,  Masaki Taniguchi

IPC分类号： G01R27/08 ,  G01R31/00 ,  H03K3/02 ,  G01R21/00

CPC分类号： H03F3/087 ,  G01R31/025 ,  H03F3/45475 ,  H03F2200/252 ,  H03F2203/45564

摘要： The test circuit according to the present invention includes: a plurality of light-receiving elements; a plurality of amplifiers, each of which converts, into a voltage, a photoelectric current supplied from one of the light-receiving elements; and an electric current supplying unit which supplies an electric current to each of the light-receiving elements and each of the amplifiers. In this test circuit, the electric current supplying unit selectively supplies an electric current to a first group of light-receiving elements and to a second group of light-receiving elements, the first group of light-receiving elements including light-receiving elements, out of the plurality of light-receiving elements, which are neither vertically nor horizontally adjacent to each other, and the second group of light-receiving elements including light-receiving elements, out of the plurality of light-receiving elements, which are vertically or horizontally adjacent to the light-receiving elements of the first group of light-receiving elements.

摘要翻译： 根据本发明的测试电路包括：多个光接收元件; 多个放大器，每个放大器将从一个光接收元件提供的光电流转换成电压; 以及电流供应单元，其向每个光接收元件和每个放大器提供电流。 在该测试电路中，电流供给单元选择性地将电流提供给第一组光接收元件和第二组光接收元件，第一组光接收元件包括光接收元件 多个光接收元件彼此不垂直或水平相邻，并且包括在垂直或水平方向上的多个光接收元件中的包含光接收元件的第二组光接收元件 邻近第一组光接收元件的光接收元件。

公开(公告)号：US06806115B2

公开(公告)日：2004-10-19

申请号：US10285170

申请日：2002-10-30

申请人： Norikatsu Koide ,  Junji Yamamoto ,  Tsuyoshi Dohkita ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yousuke Kuroiwa ,  Masahito Yamaguchi

发明人： Norikatsu Koide ,  Junji Yamamoto ,  Tsuyoshi Dohkita ,  Nobuhiko Sawaki ,  Yoshio Honda ,  Yousuke Kuroiwa ,  Masahito Yamaguchi

IPC分类号： H01L2100

CPC分类号： H01L33/08

摘要： A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 &mgr;m or less.

摘要翻译： 一种制造半导体发光器件的方法包括以下步骤：在硅衬底的表面上形成具有多个开口的掩模层; 以及在氮化物半导体材料的多个开口中形成包括发光层的柱状多层结构。 掩模层的多个开口的两个相邻开口之间的宽度为10um或更小。