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    Magnetoresistive element and magnetic head
    2.
    发明授权
    Magnetoresistive element and magnetic head 有权
    磁阻元件和磁头

    公开(公告)号：US07855859B2

    公开(公告)日：2010-12-21

    申请号：US12005273

    申请日：2007-12-27

    申请人： Shinji Hara ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Tsuyoshi Ichiki ,  Toshiyuki Ayukawa

    发明人： Shinji Hara ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Tsuyoshi Ichiki ,  Toshiyuki Ayukawa

    IPC分类号： G11B5/33

    CPC分类号： G01R33/098 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08

    摘要： In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers.

    摘要翻译： 在MR元件中，第一和第二铁磁层通过间隔层彼此反铁磁耦合，并且当不施加外部磁场并且响应于外部磁场改变方向时，具有相反方向的磁化。 间隔层和第二铁磁层依次堆叠在第一铁磁层上。 第一铁磁层包括堆叠的多个铁磁材料层和由非磁性材料制成的插入层，并且插入在彼此相邻的两个铁磁材料层之间，沿堆叠层的方向相邻。 铁磁材料层和间隔层各自包括晶体结构为面心立方结构的成分。 间隔层和插入层各自由原子半径大于构成铁磁体层的至少一个元素的原子半径的元素构成。

    Magnetoresistive element and magnetic head
    3.
    发明申请
    Magnetoresistive element and magnetic head 有权
    磁阻元件和磁头

    公开(公告)号：US20090168264A1

    公开(公告)日：2009-07-02

    申请号：US12005273

    申请日：2007-12-27

    申请人： Shinji Hara ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Tsuyoshi Ichiki ,  Toshiyuki Ayukawa

    发明人： Shinji Hara ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Tsuyoshi Ichiki ,  Toshiyuki Ayukawa

    IPC分类号： G11B5/33

    CPC分类号： G01R33/098 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08

    摘要： In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers.

    摘要翻译： 在MR元件中，第一和第二铁磁层通过间隔层彼此反铁磁耦合，并且当不施加外部磁场并且响应于外部磁场改变方向时，具有相反方向的磁化。 间隔层和第二铁磁层依次堆叠在第一铁磁层上。 第一铁磁层包括堆叠的多个铁磁材料层和由非磁性材料制成的插入层，并且插入在彼此相邻的两个铁磁材料层之间，沿堆叠层的方向相邻。 铁磁材料层和间隔层各自包括晶体结构为面心立方结构的成分。 间隔层和插入层各自由原子半径大于构成铁磁体层的至少一个元素的原子半径的元素构成。

    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    6.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090190270A1

    公开(公告)日：2009-07-30

    申请号：US12022538

    申请日：2008-01-30

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

    MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    9.
    发明申请
    MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权

    公开(公告)号：US20090290264A1

    公开(公告)日：2009-11-26

    申请号：US12126567

    申请日：2008-05-23

    申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.

    Magneto-resistive effect device and magnetic disk system
    10.
    发明授权
    Magneto-resistive effect device and magnetic disk system 有权
    磁阻效应器和磁盘系统

    公开(公告)号：US08472150B2

    公开(公告)日：2013-06-25

    申请号：US11968911

    申请日：2008-01-03

    申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

    发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

    IPC分类号： G11B5/33

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3993 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/10

    摘要： A giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of the spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc.

    摘要翻译： 具有包括间隔层的CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），以及间隔层彼此叠置的第一铁磁层和第二铁磁层， 其中所述间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及插入在所述第一非磁性金属层和所述第二非磁性金属层之间的半导体氧化物层 非磁性金属层，形成间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，添加金属不太可能被氧化成锌。