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公开(公告)号：US08437376B2
公开(公告)日：2013-05-07
申请号：US13294682
申请日：2011-11-11
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0283
摘要： A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
摘要翻译： 氮化物半导体器件包括由III族氮化物半导体制成并具有发光小面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂膜。 第一涂膜是由含有铝的氮化物制成的结晶膜。 结晶膜由一组单畴构成，单畴由一组晶体构成，晶粒取向面具有相同的倾斜角度和相同的旋转角度。 单位面积域之间的边界长度为7mum-1以下。
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公开(公告)号：US20120057612A1
公开(公告)日：2012-03-08
申请号：US13294682
申请日：2011-11-11
IPC分类号： H01S5/323
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0283
摘要： A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
摘要翻译： 氮化物半导体器件包括由III族氮化物半导体制成并具有发光小面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂膜。 第一涂膜是由含有铝的氮化物制成的结晶膜。 结晶膜由一组单畴构成，单畴由一组晶体构成，晶粒取向面具有相同的倾斜角度和相同的旋转角度。 每单位面积域的边界长度为7μm-1以下。
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公开(公告)号：US07050472B2
公开(公告)日：2006-05-23
申请号：US09795959
申请日：2001-02-28
申请人： Kenji Orita , Atsunori Mochida , Masaaki Yuri
发明人： Kenji Orita , Atsunori Mochida , Masaaki Yuri
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , H01S5/209 , H01S5/2231 , H01S5/32316
摘要： The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.
摘要翻译： 本发明提供一种半导体激光器件，其包括有源层，设置有衍射光栅的半导体层，蚀刻停止层，设置有条纹结构的覆层，以及至少设置在所述条纹侧的电流阻挡层 结构，在基板上依次形成。 在该半导体激光器件中，利用衍射光栅在半导体层上形成蚀刻停止层，从而可以防止由蚀刻引起的衍射光栅的损伤。 本发明还提供一种分布式布拉格反射半导体激光器件，其包括有源层，以及具有条状窗口的电流阻挡层和至少形成在其端面附近的衍射光栅。 该半导体激光器件可以制造成比常规半导体激光器件更少的晶体生长工艺。
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公开(公告)号：US08194711B2
公开(公告)日：2012-06-05
申请号：US12470919
申请日：2009-05-22
IPC分类号： H01S5/00
CPC分类号： H01S5/0281 , B82Y20/00 , H01S5/0282 , H01S5/0287 , H01S5/1039 , H01S5/22 , H01S5/34333
摘要： A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.
摘要翻译： 氮化物半导体激光器件包括多层结构，其包括多个氮化物半导体层，所述多个氮化物半导体层包括发光层，所述多层结构具有彼此面对的空腔面，以及多个由介电材料制成的保护膜，所述绝缘材料设置在所述腔面之一 。 保护膜包括第一保护膜，第二保护膜和第三保护膜。 第一保护膜接触腔面并由氮化铝制成。 第二保护膜设置在与第一保护膜的空腔面相对的表面上，并且由与第一保护膜不同的材料制成。 第三保护膜设置在与第二保护膜的第一保护膜相反的表面上，并且由与第一保护膜相同的材料制成。
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5.发明授权公开(公告)号：US07759684B2
公开(公告)日：2010-07-20
申请号：US12401929
申请日：2009-03-11
IPC分类号： H01L27/15
CPC分类号： H01S5/0281 , H01S5/0282 , H01S5/0287 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.
摘要翻译： 氮化物半导体发光器件包括氮化物半导体多层膜。 氮化物半导体多层膜形成在基板上，由氮化物半导体晶体制成，并且包括发光层。 在氮化物半导体多层膜中，形成空腔的小面，并且在至少一个面上形成由氮化铝晶体制成的保护膜。 保护膜具有与构成其上形成有保护膜的腔的面的氮化物半导体晶体的晶面的晶轴成90度角的晶面。
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公开(公告)号：US20050281304A1
公开(公告)日：2005-12-22
申请号：US11079526
申请日：2005-03-15
申请人： Atsunori Mochida
发明人： Atsunori Mochida
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/2214 , H01S5/222 , H01S5/2224 , H01S5/2231 , H01S2301/185 , H01S2304/04
摘要： A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.
摘要翻译： 半导体激光器件包括MQW有源层，形成在MQW有源层上的p型覆层，具有脊部并且具有比MQW有源层的折射率小的折射率;多个电介质膜至少形成在 p型包覆层的一部分从脊部的每一侧延伸。
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公开(公告)号：US07356060B2
公开(公告)日：2008-04-08
申请号：US11079526
申请日：2005-03-15
申请人： Atsunori Mochida
发明人： Atsunori Mochida
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/2214 , H01S5/222 , H01S5/2224 , H01S5/2231 , H01S2301/185 , H01S2304/04
摘要： A semiconductor laser device includes a MQW active layer, a p-type cladding layer formed on the MQW active layer, having a ridge portion and having a smaller refractive index than that of the MQW active layer, a plurality of dielectric films formed at least on part of the p-type cladding layer extending from each side of the ridge portion.
摘要翻译： 半导体激光器件包括MQW有源层，形成在MQW有源层上的p型覆层，具有脊部并且具有比MQW有源层的折射率更小的折射率;多个电介质膜至少形成在 p型包覆层的一部分从脊部的每一侧延伸。
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公开(公告)号：US20050116243A1
公开(公告)日：2005-06-02
申请号：US10998988
申请日：2004-11-30
申请人： Atsunori Mochida
发明人： Atsunori Mochida
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0207 , H01S5/22 , H01S5/2201 , H01S2304/12
摘要： An object of the present invention is to provide a semiconductor laser device that has a long life character and can improve the yield in manufacturing and its manufacturing method. The semiconductor laser device includes two cleavage planes 70 that form end surfaces of a resonator, a GaN substrate 1, a low temperature growth buffer layer 2 formed on the substrate 1 and a growth layer 3 formed on the low temperature growth buffer layer 2. The growth layer 3 has a ridge part 4 and plural grooves 7 is formed, more specifically, the ridge part 4 is formed on the region 3b of low threading dislocation density in the growth layer 3 and the grooves 7 are formed on the region 3a of high threading dislocation density that is the part except the ridge part 4 on the growth layer 3 so that the grooves extend from one of the cleavage plane to the other cleavage plane.
摘要翻译： 本发明的目的是提供一种具有长寿命特性并能提高制造成品率的半导体激光装置及其制造方法。 半导体激光装置包括形成谐振器的端面的两个解理面70，形成在基板1上的GaN基板1，低温生长缓冲层2和形成在低温生长缓冲层2上的生长层3。 生长层3具有脊部4，并且形成多个凹槽7，更具体地，在生长层3中的低穿透位错密度的区域3b上形成脊部4，并且在区域3上形成凹槽7 高度穿透位错密度，其是除了生长层3上的脊部4之外的部分，使得凹槽从解理面之一延伸到另一解理面。
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