公开(公告)号：US20070012968A1

公开(公告)日：2007-01-18

申请号：US11523578

申请日：2006-09-20

申请人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

发明人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

公开(公告)号：US20050045925A1

公开(公告)日：2005-03-03

申请号：US10930814

申请日：2004-09-01

申请人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

发明人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H01L21/8238 ,  H01L27/148

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H01L27/1463

摘要： The present invention is a solid-state imaging device formed on a silicon substrate 1 for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device comprises, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of the first conductivity type, a transistor and a device isolation region whose depth is less than the depth of the charge accumulation region of the first conductivity type, at which the impurity density is at maximum.

摘要翻译： 本发明是形成在硅基板1上的固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。 该固态成像装置包括针对每个像素的成像区域，该成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度 杂质密度最大的第一导电类型。

公开(公告)号：US07199411B2

公开(公告)日：2007-04-03

申请号：US10930814

申请日：2004-09-01

申请人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

发明人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC分类号： H01L31/062

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

摘要翻译： 在硅基板上形成固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。 固态成像装置包括：对于每个像素，成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度 杂质密度最大的第一导电类型。

公开(公告)号：US20070020795A1

公开(公告)日：2007-01-25

申请号：US10568961

申请日：2005-01-07

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Shinji Yoshida

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Shinji Yoshida

IPC分类号： H01L21/00

CPC分类号： H01L27/1463 ,  H01L21/76205 ,  H01L27/14689

摘要： In a method for manufacturing a solid-state imaging device of the present invention, a pad insulting film 2 made of an oxide film and an anti-oxidizing film 3 made of a nitride film are deposited on a n-type semiconductor substrate 1. Then, an opening 4 is formed to expose an element isolation formation region of the semiconductor substrate 1. Next, an anti-oxidizing film (not shown) for burying the opening 4 is formed on the substrate and anisotropic etching is performed to form a sidewall 5. Subsequently, a trench 6 is formed using the anti-oxidizing film 3 and the sidewall 5 as a mask. Then, a p-type impurity is implanted into a part of the semiconductor substrate 1 which is exposed at the side face of the trench 6 and a thermal oxide film is formed in the surface portion of the trench 6 in the semiconductor substrate 1. Thereafter, the trench 6 is buried with a burying film 8.

摘要翻译： 在本发明的固体摄像装置的制造方法中，在n型半导体基板1上沉积由氧化膜构成的焊盘绝缘膜2和由氮化物膜构成的抗氧化膜3。 然后，形成开口4以露出半导体衬底1的元件隔离形成区域。 接下来，在基板上形成用于埋入开口4的抗氧化膜（未示出），并执行各向异性蚀刻以形成侧壁5。 随后，使用抗氧化膜3和侧壁5作为掩模形成沟槽6。 然后，将p型杂质注入到在沟槽6的侧面露出的半导体衬底1的一部分中，并且在半导体衬底1中的沟槽6的表面部分中形成热氧化膜。 此后，沟槽6被埋入掩埋膜8。

公开(公告)号：US07569906B2

公开(公告)日：2009-08-04

申请号：US11702531

申请日：2007-02-06

申请人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

发明人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

IPC分类号： H01L29/00 ,  H01L29/84

CPC分类号： H04R19/04 ,  H01L25/162 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

摘要翻译： 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。

公开(公告)号：US20090014759A1

公开(公告)日：2009-01-15

申请号：US12233080

申请日：2008-09-18

申请人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US08378401B2

公开(公告)日：2013-02-19

申请号：US13335537

申请日：2011-12-22

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US08106431B2

公开(公告)日：2012-01-31

申请号：US12178250

申请日：2008-07-23

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US07800144B2

公开(公告)日：2010-09-21

申请号：US12233080

申请日：2008-09-18

申请人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US07638853B2

公开(公告)日：2009-12-29

申请号：US11826570

申请日：2007-07-17

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L21/00 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14683

摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。