SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME 有权
    半导体存储器件及其控制方法

    公开(公告)号:US20120120739A1

    公开(公告)日:2012-05-17

    申请号:US13356341

    申请日:2012-01-23

    IPC分类号: G11C5/14 G11C7/12 G11C7/00

    摘要: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

    摘要翻译: 内部电压发生器激活时,产生内部电压供给内部电路。 操作内部电压发生器消耗预定量的功率。 响应来自外部的控制信号,入口电路使内部电压发生器失活。 内部电压发生器未激活时,不产生内部电压,从而降低功耗。 因此,通过来自外部的控制信号,芯片可以容易地进入低功耗模式。 内部电压发生器的例子是用于产生与存储器单元连接的字线的升压电压的升压器,用于产生衬底电压的衬底电压发生器或用于产生要连接的位线的预充电电压的预充电电压发生器 记忆细胞。

    Semiconductor memory device and method of controlling the same
    2.
    发明授权
    Semiconductor memory device and method of controlling the same 有权
    半导体存储器件及其控制方法

    公开(公告)号:US08130586B2

    公开(公告)日:2012-03-06

    申请号:US12847955

    申请日:2010-07-30

    IPC分类号: G11C5/14

    摘要: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

    摘要翻译: 内部电压发生器激活时,产生内部电压供给内部电路。 操作内部电压发生器消耗预定量的功率。 响应来自外部的控制信号,入口电路使内部电压发生器失活。 内部电压发生器未激活时,不产生内部电压,从而降低功耗。 因此,通过来自外部的控制信号,芯片可以容易地进入低功耗模式。 内部电压发生器的例子是用于产生与存储器单元连接的字线的升压电压的升压器,用于产生衬底电压的衬底电压发生器或用于产生要连接的位线的预充电电压的预充电电压发生器 记忆细胞。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME 有权
    半导体存储器件及其控制方法

    公开(公告)号:US20100302879A1

    公开(公告)日:2010-12-02

    申请号:US12847955

    申请日:2010-07-30

    IPC分类号: G11C5/14

    摘要: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

    摘要翻译: 内部电压发生器激活时,产生内部电压供给内部电路。 操作内部电压发生器消耗预定量的功率。 响应来自外部的控制信号,入口电路使内部电压发生器失活。 内部电压发生器未激活时,不产生内部电压,从而降低功耗。 因此,通过来自外部的控制信号,芯片可以容易地进入低功耗模式。 内部电压发生器的例子是用于产生与存储器单元连接的字线的升压电压的升压器,用于产生衬底电压的衬底电压发生器或用于产生要连接的位线的预充电电压的预充电电压发生器 记忆细胞。

    Semiconductor memory device, and method of controlling the same
    4.
    发明授权
    Semiconductor memory device, and method of controlling the same 有权
    半导体存储器件及其控制方法

    公开(公告)号:US07903487B2

    公开(公告)日:2011-03-08

    申请号:US12201922

    申请日:2008-08-29

    IPC分类号: G11C7/00 G11C5/14

    摘要: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

    摘要翻译: 内部电压发生器激活时,产生内部电压供给内部电路。 操作内部电压发生器消耗预定量的功率。 响应来自外部的控制信号,入口电路使内部电压发生器失活。 内部电压发生器未激活时,不产生内部电压,从而降低功耗。 因此,通过来自外部的控制信号,芯片可以容易地进入低功耗模式。 内部电压发生器的例子是用于产生与存储器单元连接的字线的升压电压的升压器,用于产生衬底电压的衬底电压发生器或用于产生要连接的位线的预充电电压的预充电电压发生器 记忆细胞。

    Semiconductor memory device, and method of controlling the same
    6.
    发明申请
    Semiconductor memory device, and method of controlling the same 有权
    半导体存储器件及其控制方法

    公开(公告)号:US20070014178A1

    公开(公告)日:2007-01-18

    申请号:US11515853

    申请日:2006-09-06

    摘要: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

    摘要翻译: 内部电压发生器激活时,产生内部电压供给内部电路。 操作内部电压发生器消耗预定量的功率。 响应来自外部的控制信号,入口电路使内部电压发生器失活。 内部电压发生器未激活时,不产生内部电压,从而降低功耗。 因此,通过来自外部的控制信号,芯片可以容易地进入低功耗模式。 内部电压发生器的例子是用于产生与存储器单元连接的字线的升压电压的升压器,用于产生衬底电压的衬底电压发生器或用于产生要连接的位线的预充电电压的预充电电压发生器 记忆细胞。

    SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF CONTROLLING THE SAME 有权
    半导体存储器件及其控制方法

    公开(公告)号:US20090010080A1

    公开(公告)日:2009-01-08

    申请号:US12201922

    申请日:2008-08-29

    IPC分类号: G11C7/00 G11C5/14 G11C8/00

    摘要: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

    摘要翻译: 内部电压发生器激活时,产生内部电压供给内部电路。 操作内部电压发生器消耗预定量的功率。 响应来自外部的控制信号,入口电路使内部电压发生器失活。 内部电压发生器未激活时,不产生内部电压,从而降低功耗。 因此,通过来自外部的控制信号,芯片可以容易地进入低功耗模式。 内部电压发生器的例子是用于产生与存储器单元连接的字线的升压电压的升压器,用于产生衬底电压的衬底电压发生器或用于产生要连接的位线的预充电电压的预充电电压发生器 记忆细胞。

    Dynamic random access memory having a low power consumption mode, and method of operating the same
    10.
    发明授权
    Dynamic random access memory having a low power consumption mode, and method of operating the same 有权
    具有低功耗模式的动态随机存取存储器及其操作方法

    公开(公告)号:US06584032B2

    公开(公告)日:2003-06-24

    申请号:US09949847

    申请日:2001-09-12

    IPC分类号: G11C700

    摘要: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

    摘要翻译: 内部电压发生器激活时,产生内部电压供给内部电路。 操作内部电压发生器消耗预定量的功率。 响应来自外部的控制信号,入口电路使内部电压发生器失活。 内部电压发生器未激活时,不产生内部电压,从而降低功耗。 因此,通过来自外部的控制信号,芯片可以容易地进入低功耗模式。 内部电压发生器的例子是用于产生与存储器单元连接的字线的升压电压的升压器,用于产生衬底电压的衬底电压发生器或用于产生要连接的位线的预充电电压的预充电电压发生器 记忆细胞。