公开(公告)号：US07115896B2

公开(公告)日：2006-10-03

申请号：US10721488

申请日：2003-11-25

申请人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan S. Shelton ,  Alex D. Ceruzzi ,  Michael Murphy ,  Richard A. Stall

发明人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan S. Shelton ,  Alex D. Ceruzzi ,  Michael Murphy ,  Richard A. Stall

IPC分类号： H01L29/06

CPC分类号： H01L29/155 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

摘要翻译： 在硅衬底上生长氮化物半导体，通过沉积几个单层铝，以保护硅衬底免受生长过程中使用的氨的影响，然后从氮化铝形成成核层，并形成包含多个超晶格Al 具有不同组成的半导体和GaN或其它富镓氮化物半导体的中间层的半导体。 所得结构具有优异的晶体质量。 在器件完成之前除去用于外延生长的硅衬底，以便在诸如高电子迁移率晶体管的器件中提供优异的电性能。

公开(公告)号：US20060154455A1

公开(公告)日：2006-07-13

申请号：US11371738

申请日：2006-03-09

申请人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan Shelton ,  Alex Ceruzzi ,  Michael Murphy ,  Richard Stall

发明人： Shiping Guo ,  David Gotthold ,  Milan Pophristic ,  Boris Peres ,  Ivan Eliashevich ,  Bryan Shelton ,  Alex Ceruzzi ,  Michael Murphy ,  Richard Stall

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： H01L29/155 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

摘要翻译： 在硅衬底上生长氮化物半导体，通过沉积几个单层铝，以保护硅衬底免受生长过程中使用的氨的影响，然后从氮化铝形成成核层，并形成包含多个超晶格Al 具有不同组成的半导体和GaN或其它富镓氮化物半导体的中间层的半导体。 所得结构具有优异的晶体质量。 在器件完成之前除去用于外延生长的硅衬底，以便在诸如高电子迁移率晶体管的器件中提供优异的电性能。

公开(公告)号：US20070218199A1

公开(公告)日：2007-09-20

申请号：US11353708

申请日：2006-02-13

申请人： Richard Bresnahan ,  David Gotthold ,  Scott Priddy

发明人： Richard Bresnahan ,  David Gotthold ,  Scott Priddy

IPC分类号： C23C16/00

CPC分类号： C30B23/066 ,  C30B35/00

摘要： A crucible for heating material to be deposited on a target substrate includes a body configured to contain source material, a base formed at a first end of the body, and an emitting orifice formed at a second end of the body. The crucible further includes at least one intermediate orifice arranged and configured such that the heated source material passes through the intermediate orifice and impacts at least once upon the inner surface of the crucible body before passing through the emitting orifice.

摘要翻译： 用于加热要沉积在靶基板上的材料的坩埚包括构造成容纳源材料的主体，形成在主体的第一端处的底座和形成在主体的第二端处的发射孔。 所述坩埚还包括至少一个中间孔口，其布置和构造成使得所述加热的源材料通过所述中间孔口，并且在通过所述排放孔口之前至少冲击所述坩埚体的内表面。