公开(公告)号：US06666921B2

公开(公告)日：2003-12-23

申请号：US10079852

申请日：2002-02-22

申请人： Shiro Sakai ,  Yukichi Takamatsu ,  Yuji Mori ,  Hong Xing Wang ,  Yoshiyasu Ishihama ,  Yutaka Amijima

发明人： Shiro Sakai ,  Yukichi Takamatsu ,  Yuji Mori ,  Hong Xing Wang ,  Yoshiyasu Ishihama ,  Yutaka Amijima

IPC分类号： C23C1600

CPC分类号： C23C16/45502 ,  C23C16/455 ,  C23C16/45591 ,  C30B25/14

摘要： The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.

摘要翻译： 本发明提供了一种用于半导体膜的化学气相沉积装置，其包含水平管状反应器，基座，加热器，进料气体引入部分和反应气体排出部分，其中部分管式反应器壁从上游向下倾斜 进料气体通道的一侧朝向其下游侧。 本发明还提供使用该装置的化学气相沉积方法。

公开(公告)号：US06592674B2

公开(公告)日：2003-07-15

申请号：US09962143

申请日：2001-09-26

申请人： Shiro Sakai ,  Yukichi Takamatsu ,  Yuji Mori ,  Hiroyuki Naoi ,  Hong Xing Wang ,  Yoshiyasu Ishihama ,  Yutaka Amijima

发明人： Shiro Sakai ,  Yukichi Takamatsu ,  Yuji Mori ,  Hiroyuki Naoi ,  Hong Xing Wang ,  Yoshiyasu Ishihama ,  Yutaka Amijima

IPC分类号： C23C1600

CPC分类号： C23C16/45568 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  C30B29/406

摘要： There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway. It is made possible by the apparatus and method to assure high quality crystals without generating a deposit of decomposed products or reaction products on a tubular reactor wall in opposition to the substrate even in the case of carrying out chemical vapor deposition of a large-sized substrate or simultaneously conducting that of a plurality of substrates, or performing the same at a high temperature.

公开(公告)号：US06447576B1

公开(公告)日：2002-09-10

申请号：US09671139

申请日：2000-09-28

申请人： Kenji Otsuka ,  Yutaka Amijima ,  Ryuji Hasemi ,  Youji Nawa

发明人： Kenji Otsuka ,  Yutaka Amijima ,  Ryuji Hasemi ,  Youji Nawa

IPC分类号： B01D5302

CPC分类号： B01J20/28057 ,  B01D53/02 ,  B01D53/46 ,  B01D2257/706 ,  B01J20/0237 ,  B01J20/06 ,  C23C16/4412

摘要： A cleaning agent and a cleaning process for cleaning a harmful gas containing, as a harmful component, an organometallic compound represented by the general formula: Rm—M—Hn wherein R is alkyl; M is As, P, S, Se or Te; and m and n are each positive integer satisfying the relation: m+n=valence of M are described. The cleaning agent contains, as an effective component, copper (II) oxide or a mixture of copper (II) oxide and manganese dioxide. The copper (II) oxide has a BET specific surface area of 10 m2/g or greater which is extremely larger than that of copper (II) oxide conventionally used as the effective component of known cleaning agents. With such an extremely large BET specific surface area, the cleaning agent strongly and stably adsorbs the harmful organometallic compound, thereby efficiently cleaning the harmful gas without causing desorption of the adsorbed organometallic compound.

摘要翻译： 一种清洁剂和清洁方法，用于清洗含有由以下通式表示的有机金属化合物作为有害成分的有害气体：其中R是烷基; M为As，P，S，Se或Te; m和n分别为满足关系式的正整数：m + n = M的化合价。 清洁剂含有氧化铜（II）或氧化铜（II）和二氧化锰的混合物作为有效成分。 氧化铜（II）具有10m 2 / g以上的BET比表面积，其比通常用作已知清洁剂的有效成分的铜（II）氧化物的BET比表面积大得多。 通过这样一个非常大的BET比表面积，清洗剂强烈稳定地吸附有害的有机金属化合物，从而有效地清洗有害气体而不引起吸附的有机金属化合物的解吸附。

公开(公告)号：US06325841B1

公开(公告)日：2001-12-04

申请号：US09530951

申请日：2000-05-16

申请人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

发明人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

IPC分类号： B01D5304

CPC分类号： B01D53/685 ,  B01J20/04 ,  B01J20/041 ,  B01J20/20 ,  B01J20/223 ,  B01J20/28004 ,  B01J20/2803 ,  B01J20/28066 ,  B01J20/3007 ,  B01J20/3014 ,  B01J20/3042 ,  B01J20/3204 ,  B01J20/3236 ,  B01J2220/42 ,  B01J2220/485 ,  B01J2220/58 ,  Y10S95/901

摘要： A cleaning agent and a cleaning process for efficiently removing noxious halogen-based gases such as fluorine, chlorine, boron trifluoride, boron trichloride and tungsten hexafluoride from exhaust gases from semiconductor fabrication processes. The cleaning agent is produced by adherently adding alkali metal formate and/or alkaline earth metal formate to activated carbon, or adherently adding alkali metal hydroxide and/or alkaline earth metal hydroxide together with alkali metal formate and/or alkaline earth metal formate to activated carbon. By exposing exhaust gases to the cleaning agent, noxious halogen-based gases in the exhaust gases are efficiently removed with little desorption of halogen-based gases adsorbed on the cleaning agent. Also, the cleaning treatment is further improved in safety and efficiency by a pre-treatment cleaning agent comprising a metal oxide or a metal hydroxide and a post-treatment cleaning agent prepared by adherently adding sodium formate to a metal oxide.

摘要翻译： 一种用于从半导体制造工艺的废气有效地除去有害的卤素基气体如氟，氯，三氟化硼，三氯化硼和六氟化钨的清洁剂和清洁方法。 清洁剂是通过将碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上，或将碱金属氢氧化物和/或碱土金属氢氧化物与碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上而制得的 。 通过将废气暴露于清洁剂中，废气中有害的卤素基气体被有效地去除，吸附在清洁剂上的卤素基气体很少被解吸。 此外，通过包含金属氧化物或金属氢氧化物的预处理清洁剂和通过将金属氧化物附着在甲酸钠中制备的后处理清洁剂进一步提高了清洁处理的安全性和效率。