公开(公告)号：US06325841B1

公开(公告)日：2001-12-04

申请号：US09530951

申请日：2000-05-16

申请人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

发明人： Kenji Otsuka ,  Satoshi Arakawa ,  Ryuji Hasemi ,  Yutaka Amijima ,  Norihiro Suzuki

IPC分类号： B01D5304

CPC分类号： B01D53/685 ,  B01J20/04 ,  B01J20/041 ,  B01J20/20 ,  B01J20/223 ,  B01J20/28004 ,  B01J20/2803 ,  B01J20/28066 ,  B01J20/3007 ,  B01J20/3014 ,  B01J20/3042 ,  B01J20/3204 ,  B01J20/3236 ,  B01J2220/42 ,  B01J2220/485 ,  B01J2220/58 ,  Y10S95/901

摘要： A cleaning agent and a cleaning process for efficiently removing noxious halogen-based gases such as fluorine, chlorine, boron trifluoride, boron trichloride and tungsten hexafluoride from exhaust gases from semiconductor fabrication processes. The cleaning agent is produced by adherently adding alkali metal formate and/or alkaline earth metal formate to activated carbon, or adherently adding alkali metal hydroxide and/or alkaline earth metal hydroxide together with alkali metal formate and/or alkaline earth metal formate to activated carbon. By exposing exhaust gases to the cleaning agent, noxious halogen-based gases in the exhaust gases are efficiently removed with little desorption of halogen-based gases adsorbed on the cleaning agent. Also, the cleaning treatment is further improved in safety and efficiency by a pre-treatment cleaning agent comprising a metal oxide or a metal hydroxide and a post-treatment cleaning agent prepared by adherently adding sodium formate to a metal oxide.

摘要翻译： 一种用于从半导体制造工艺的废气有效地除去有害的卤素基气体如氟，氯，三氟化硼，三氯化硼和六氟化钨的清洁剂和清洁方法。 清洁剂是通过将碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上，或将碱金属氢氧化物和/或碱土金属氢氧化物与碱金属甲酸盐和/或碱土金属甲酸盐附着在活性炭上而制得的 。 通过将废气暴露于清洁剂中，废气中有害的卤素基气体被有效地去除，吸附在清洁剂上的卤素基气体很少被解吸。 此外，通过包含金属氧化物或金属氢氧化物的预处理清洁剂和通过将金属氧化物附着在甲酸钠中制备的后处理清洁剂进一步提高了清洁处理的安全性和效率。

公开(公告)号：US5882615A

公开(公告)日：1999-03-16

申请号：US677978

申请日：1996-07-10

申请人： Hideki Fukuda ,  Kenji Otsuka ,  Satoshi Arakawa

发明人： Hideki Fukuda ,  Kenji Otsuka ,  Satoshi Arakawa

IPC分类号： B01D53/68 ,  B01J20/04

CPC分类号： B01D53/68 ,  B01D2251/406

摘要： There are disclosed a cleaning agent for removing a fluorine-compound gas such as hydrogen fluoride, fluorine, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride which agent comprises a molded article produced by using strontium hydroxide as a principal component, an organic binding agent as a molding agent and the hydroxide of an alkaline earth metal other than strontium as a molding aid; and a process for cleaning a harmful gas which comprises feeding a harmful gas containing a fluorine-compound gas into a column packed inside with the above cleaning agent to remove the fluorine-compound gas; and exhausting a gas substantially free from the fluorine-compound gas. The above cleaning agent is capable of removing the fluorine-compound gas in high efficiency without causing any danger, thereby making itself well suited to the cleaning of the gases exhausted, for example, from semiconductor manufacturing industries.

摘要翻译： 公开了一种用于除去氟化氢，氟，六氟化钨，四氟化硅和三氟化硼等氟化合物气体的清洗剂，该清洗剂包括通过使用氢氧化锶作为主要成分制备的模制品，有机粘合剂作为 成型剂和除锶之外的碱土金属的氢氧化物作为模塑助剂; 以及清洗有害气体的方法，包括将含有氟化合物气体的有害气体进料到填充有上述清洗剂的内部的塔中以除去氟化合物气体; 并排出基本上不含氟化合物气体的气体。 上述清洗剂能够高效率地除去氟化合物气体，而不会产生任何危险，从而使其非常适用于例如从半导体制造业排出的气体的清洗。

公开(公告)号：US5756060A

公开(公告)日：1998-05-26

申请号：US740855

申请日：1996-11-04

申请人： Kenji Otsuka ,  Satoshi Arakawa ,  Youji Nawa

发明人： Kenji Otsuka ,  Satoshi Arakawa ,  Youji Nawa

IPC分类号： B01D53/34 ,  B01D53/68 ,  B01D53/86

CPC分类号： B01D53/68 ,  B01D53/8659

摘要： A process for cleaning a harmful gas which comprises bringing a harmful gas containing a halogen gas and/or a halogen compound gas such as hydrogen fluoride, hydrogen chloride, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride into contact with a cleaning agent comprising metal oxides composed principally of copper (II) oxide and manganese (IV) oxide that are spreadingly and adhesively incorporated with sodium formate so as to remove a harmful component from the harmful gas. According to the cleaning process of the present invention, it is possible to remove harmful components from the harmful gas in extremely high efficiency at ordinary temperature, dispensing with heating or cooling irrespective of the concentration of the harmful components. The cleaning capacity of the cleaning agent is favorably maintained without deterioration even when the harmful gas is in a dry state. Furthermore, the cleaning agent can remove the harmful gas in safety without a fear of causing fire or elimination of the harmful component therefrom. The cleaning process is highly useful and significant in that it is well suited for cleaning exhaust gases from a semiconductor manufacturing process as well as an emergency countermeasure against the leakage of harmful gas from a gas cylinder.

摘要翻译： 一种清洁有害气体的方法，包括使含有卤素气体和/或卤素化合物气体如氟化氢，氯化氢，六氟化钨，四氟化硅和三氟化硼的有害气体与包含金属氧化物的清洗剂接触 主要是氧化铜（II）和氧化锰（IV），它们与甲酸钠扩散并粘合并入，以便从有害气体中除去有害成分。 根据本发明的清洗方法，可以在常温下以非常高的效率从有害气体中除去有害成分，而不管有害成分的浓度如何，分配加热或冷却。 即使当有害气体处于干燥状态时，清洁剂的清洁能力也被有利地保持而不劣化。 此外，清洁剂可以安全地除去有害气体，而不用担心引起火灾或从中消除有害成分。 清洁过程是非常有用和重要的，因为它非常适合于清洁半导体制造过程中的废气以及应对措施，防止来自气瓶的有害气体的泄漏。

公开(公告)号：US5589148A

公开(公告)日：1996-12-31

申请号：US518240

申请日：1995-08-23

申请人： Kenji Otsuka ,  Hideki Fukuda ,  Satoshi Arakawa

发明人： Kenji Otsuka ,  Hideki Fukuda ,  Satoshi Arakawa

IPC分类号： B01D53/04 ,  B01D53/28 ,  B01D53/46 ,  B01D53/68 ,  C01B7/07 ,  C01B7/09 ,  C01B7/19

CPC分类号： B01D53/28 ,  B01D53/46 ,  B01D53/68

摘要： There is disclosed a process for purifying a halogen-containing gas (halogen gas such as chlorine, fluorine alone or diluted with an inert gas) which comprises bringing the halogen-containing gas into contact with a purifying agent comprising a hydroxide of an alkaline earth metal such as strontium hydroxide and an iron oxide such as triiron tetraoxide to efficiently remove hydrogen halogenides such as hydrogen chloride and hydrogen fluoride along with moisture that are contained as impurities in the halogen-containing gas. The above process enables the formation of a non-corrosive halogen-containing gas having an extremely high purity and capable of being favorably used as etching gas for silicon films, aluminum alloy films, etc. in a semiconductor manufacturing process.

摘要翻译： 公开了一种纯化含卤气体（单独的卤素气体，单独使用氟或用惰性气体稀释）的方法，其包括使含卤素气体与包含碱土金属氢氧化物的净化剂接触 例如氢氧化锶和氧化铁如四氧化三铁，以有效地除去含卤素气体中作为杂质含有的湿气中的卤化氢如氯化氢和氟化氢。 上述方法能够形成具有极高纯度的非腐蚀性含卤素气体，并能够有利地用作半导体制造工艺中的硅膜，铝合金膜等的蚀刻气体。

公开(公告)号：US06579509B1

公开(公告)日：2003-06-17

申请号：US09716401

申请日：2000-11-21

申请人： Kenji Otsuka ,  Naoki Muranaga ,  Satoshi Arakawa ,  Tomohisa Ikeda

发明人： Kenji Otsuka ,  Naoki Muranaga ,  Satoshi Arakawa ,  Tomohisa Ikeda

IPC分类号： A62D300

CPC分类号： B01D53/8668 ,  B01D2251/102

摘要： Disclosed is a method for cleaning of the harmful gas, the method comprising mixing harmful gas, discharged from reaction processes using organic metal compounds as the reaction raw materials, with oxygen or air and thereafter bringing the mixture into contact with a catalyst obtained by carrying a noble metal on an inorganic support, a catalyst comprising at least one metal oxide selected from vanadium oxide, chromium oxide, manganese oxide, iron oxide, copper oxide, silver oxide, cobalt oxide and nickel oxide or a catalyst obtained by carrying the metal oxide on an inorganic support, at temperatures between 100° C. and 800° C. to clean the harmful gas. Disclosed also is an apparatus used in the method. The invention ensures that harmful components can be purified in an efficient manner without discharging organic compounds and a large amount of carbon dioxide after the harmful gas is purified, requiring no aftertreatment.

摘要翻译： 公开了一种清洁有害气体的方法，该方法包括将有机金属化合物作为反应原料的反应过程排出的有害气体与氧气或空气混合，然后使混合物与通过携带 在无机载体上的贵金属，包含选自氧化钒，氧化铬，氧化锰，氧化铁，氧化铜，氧化银，氧化钴和氧化镍中的至少一种金属氧化物的催化剂或通过将金属氧化物载带 无机载体，在100℃和800℃之间的温度下，以清洁有害气体。 还公开了一种在该方法中使用的装置。 本发明可确保有害成分在有害气体净化后不会排出有机化合物和大量二氧化碳，而不会有效地进行净化，不需要后处理。

公开(公告)号：US06261345B1

公开(公告)日：2001-07-17

申请号：US09413899

申请日：1999-10-07

申请人： Yasusada Miyano ,  Kenji Otsuka ,  Satoshi Arakawa

发明人： Yasusada Miyano ,  Kenji Otsuka ,  Satoshi Arakawa

IPC分类号： B01D53047

CPC分类号： B01D53/0423 ,  B01D53/0438 ,  B01D53/0462 ,  B01D2253/102 ,  B01D2253/104 ,  B01D2253/108 ,  B01D2257/406 ,  B01D2258/0216 ,  B01D2259/402

摘要： There are disclosed a process for recovering ammonia which comprises installing a shell and multi-tube adsorber which is equipped with plural adsorption tubes each packed inside with an ammonia adsorbent (e.g. synthetic zeolite) and equipped with a flow mechanism for a heat transfer medium for performing heat exchange through the adsorption tubes, passing an ammonia-containing gas through the adsorption tubes, while cooling the adsorbent with a heat transfer medium (e.g. water) to adsorb the ammonia, and thereafter collecting the adsorbed ammonia through desorption, while heating the adsorbent with a heat transfer medium (e.g. hot water) under reduced pressure; and an apparatus for the above process. The process and apparatus can recover a large amount of ammonia with high purity in high yield in a short period of time and at need in a continuos manner, prevent the deterioration of adsorption performance by forced cooling of the adsorbent, and prevent the lowering of the desorption rate by forced heating of the adsorbent.

摘要翻译： 公开了一种回收氨的方法，该方法包括安装一个壳体和多管吸附器，该吸管器装有多个吸附管，每个吸附管均装在氨吸附剂（如合成沸石）内，并配备有用于传导介质的流动机构 通过吸附管进行热交换，使含氨气体通过吸附管，同时用传热介质（例如水）冷却吸附剂以吸附氨，然后通过解吸收集吸附的氨，同时用 减压下的传热介质（例如热水）; 以及用于上述过程的装置。 该方法和装置可以在短时间内以需要以连续的方式回收大量高纯度的高纯度氨，通过强制冷却吸附剂来防止吸附性能的劣化，并防止 通过强制加热吸附剂的解吸速率。

公开(公告)号：US5895521A

公开(公告)日：1999-04-20

申请号：US880363

申请日：1997-06-23

申请人： Kenji Otsuka ,  Hiroshi Waki ,  Yoshio Yamashita ,  Satoshi Arakawa ,  Toshiya Hatakeyama

发明人： Kenji Otsuka ,  Hiroshi Waki ,  Yoshio Yamashita ,  Satoshi Arakawa ,  Toshiya Hatakeyama

IPC分类号： B01D46/00 ,  B01D46/04 ,  B01D46/24 ,  B01D46/52

CPC分类号： B01D46/2411 ,  B01D46/0001 ,  B01D46/002 ,  B01D46/0058 ,  B01D46/0068 ,  B01D46/521

摘要： A dust removing apparatus equipped with a back washing mechanism and a dust removing method for removing solid silica fine powder contained in a gas discharged from a semiconductor producing step of a single-wafer processing atmospheric pressure CVD apparatus without causing problems caused by the increase of a pressure loss and by a pressure fluctuation, wherein filter elements each having a ratio of a surface area of a primary side of a filter membrane to an apparent external surface area of the filter element of from 1 to 5 is used, gas jetting nozzle(s) for back washing is formed in the secondary side of the filter element, back washing is not carried out during filtration in the filter element and at or after changing the processing of a wafer in the CVD apparatus, back washing is carried out to blow down the silica fine powder accumulated on the primary side of the filter membrane.

摘要翻译： 一种除尘装置，其具有用于除去从单晶片加工大气压CVD装置的半导体制造工序排出的气体中所含的固体二氧化硅细粉末的除尘机构和除尘方法，而不引起由于增加的 压力损失和压力波动，其中使用过滤器膜的初级侧的表面积与过滤元件的表观外表面积之比为1至5的过滤元件，气体喷射喷嘴 ）在过滤元件的次级侧形成，在过滤元件中的过滤期间和在CVD装置中改变晶片的处理之后或之后不进行反冲洗，进行反洗以进行吹扫 二氧化硅细粉末积聚在过滤膜的一次侧。

公开(公告)号：US20110110840A1

公开(公告)日：2011-05-12

申请号：US13054373

申请日：2009-06-26

申请人： Michimasa Miyanaga ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Issei Satoh ,  Hideaki Nakahata ,  Satoshi Arakawa ,  Yoshiyuki Yamamoto ,  Takashi Sakurada

发明人： Michimasa Miyanaga ,  Naho Mizuhara ,  Keisuke Tanizaki ,  Issei Satoh ,  Hideaki Nakahata ,  Satoshi Arakawa ,  Yoshiyuki Yamamoto ,  Takashi Sakurada

IPC分类号： C30B29/40 ,  C30B23/02 ,  C30B23/06 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B23/025 ,  C30B25/18

摘要： A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal 13 includes the following steps: A underlying substrate 11 having a major surface 11a tilted toward the direction with respect to the (0001) plane is prepared. The group III-nitride crystal 13 is grown by vapor-phase epitaxy on the major surface 11a of the underlying substrate 11. The major surface 11a of the underlying substrate 11 is preferably a plane tilted at an angle of −5° to 5° from the {01-10} plane.

摘要翻译： 提供了具有大厚度和高质量的III族氮化物晶体和III族氮化物晶体的制造方法。 制备III族氮化物晶体13的方法包括以下步骤：制备具有相对于（0001）面朝向<1-100>方向倾斜的主表面11a的下面的基底11。 III族氮化物晶体13通过在下面的基底11的主表面11a上的气相外延生长。下面的基底11的主表面11a优选是以-5°至5°的角度倾斜的平面 {01-10}飞机。

公开(公告)号：US20100120231A1

公开(公告)日：2010-05-13

申请号：US12529073

申请日：2009-02-12

申请人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

发明人： Hiroyuki Kitabayashi ,  Koji Katayama ,  Satoshi Arakawa

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： H01L21/3081 ,  H01S5/0425 ,  H01S5/2086

摘要： A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：形成GaN基半导体层的步骤（S10），在GaN基半导体层上形成Al膜的步骤（S20）， 形成由具有比构成Al膜的材料的蚀刻速率低的材料构成的掩模层的步骤（S30，S40）;使用该步骤（S50）部分地除去Al膜和GaN基半导体层 掩模层作为掩模以形成脊部;步骤（S60），从掩模层的侧壁的位置缩回Al膜的端部处的侧壁的位置，形成步骤（S70） 由掩模层的侧表面和掩模层的上表面上的蚀刻速率低于构成Al膜的材料的蚀刻速率低的材料形成的保护膜，以及除去Al膜的步骤（S80） 以去除掩模层和形成的保护膜 n掩模层的上表面。

公开(公告)号：US20090127664A1

公开(公告)日：2009-05-21

申请号：US12273179

申请日：2008-11-18

申请人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

发明人： Takuji OKAHISA ,  Tomohiro Kawase ,  Tomoki Uemura ,  Muneyuki Nishioka ,  Satoshi Arakawa

IPC分类号： H01L31/20 ,  H01L29/20

CPC分类号： H01L21/02576 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

摘要： A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl4) gas as doping gas, on the underlying substrate by vapor phase growth. The growth rate of the first group III nitride semiconductor crystal is at least 200 μm/h and not more than 2000 μm/h.

摘要翻译： III族氮化物半导体晶体的生长方法包括以下步骤：制备下面的衬底，并且通过使用四氯化硅（SiCl 4）气体作为掺杂气体来生长掺杂有硅的第一III族氮化物半导体晶体，通过气相生长在下面的衬底上 成长。 第一III族氮化物半导体晶体的生长速率为至少200μm/ h且不超过2000μm/ h。