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公开(公告)号：US06270575B1
公开(公告)日：2001-08-07
申请号：US09336906
申请日：1999-06-21
IPC分类号： C30B3500
CPC分类号： C30B15/20 , C30B15/22 , Y10S117/911 , Y10T117/1032
摘要： A value of electric current flowing a neck to a melt is detected, and it is judged that a breaking of the neck occurs when the detected value has been zero, and then a seed is lowered to dip a broken part on the melt. After that the seed is lifted again to restart a pulling operation.
摘要翻译： 检测到将颈部流向熔体的电流的值，并且当检测值为零时，判断颈部发生断裂，然后降低种子以将破裂部分浸入熔体中。 之后再次提升种子以重新开始拉动操作。
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公开(公告)号：US06315827B1
公开(公告)日：2001-11-13
申请号：US09410723
申请日：1999-09-30
申请人： Shoei Kurosaka , Junsuke Tomioka , Masakazu Kobayashi , Kazuhiro Mimura , Kenji Okamura , Hiroshi Monden , Naritoshi Ohtsukasa , Hiroshi Yoshinada
发明人： Shoei Kurosaka , Junsuke Tomioka , Masakazu Kobayashi , Kazuhiro Mimura , Kenji Okamura , Hiroshi Monden , Naritoshi Ohtsukasa , Hiroshi Yoshinada
IPC分类号： C30B1530
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： There is described an apparatus for producing a single crystal ingot capable of stably manufacturing a single crystal ingot by means of the Czochralski method, without being affected by influence of variation in extension of wires or an offset in points clamped by a clamping member. The clamping member is engaged with an engagement step formed in a single crystal which is being pulled by the CZ method, and the single crystal is pulled. The single crystal ingot manufacturing apparatus is provided with a flexible mechanism for absorbing variation in extension of the wires, in intermediate portions of the wires. Variation in extension of the wires is eliminated by means of the flexible mechanism, thereby retaining the single crystal in an upright position. Further, a sacrifice member which deforms so as to conform to the circumference of the engagement step is interposed between the clamping member and the engagement step, thereby preventing occurrence of cracking or deformation in the single crystal.
摘要翻译： 描述了一种用于生产能够通过切克劳斯基法（Czochralski）方法稳定地制造单晶锭的单晶锭的装置，而不受电线延伸的影响或由夹紧件夹紧的点的偏移的影响。 夹持构件与通过CZ方法拉制的单晶中形成的接合台阶接合，并且单晶被拉动。 单晶锭制造装置在电线的中间部分设置有用于吸收电线延伸变化的柔性机构。 通过柔性机构消除了电线延伸的变化，从而将单晶保持在直立位置。 此外，在夹紧构件和接合步骤之间插入有变形以使其与接合台阶的圆周相适应的牺牲构件，从而防止单晶中的开裂或变形。
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公开(公告)号：US6042644A
公开(公告)日：2000-03-28
申请号：US121858
申请日：1998-07-24
CPC分类号： C30B15/30 , C30B15/22 , Y10S117/911 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling method includes the steps of: immersing seed crystal in a melt; growing single crystal around the seed crystal and reducing its diameter to remove dislocation in the single crystal; prior to forming a straight waist product portion of single crystal having a prescribed diameter, forming a straight waist holding portion having a diameter smaller than the prescribed diameter; holding the straight waist holding portion by using a single crystal holding device; and pulling the straight waist product portion while the straight waist holding portion is held. Preferably the step of forming the straight waist holding portion includes a step of varying a pulling speed to make unevenness in the surface thereof.
摘要翻译： 单晶拉拔方法包括以下步骤：将晶种浸入熔体中; 在晶种周围生长单晶并减小其直径以去除单晶中的位错; 在形成具有规定直径的单晶的直腰部产品部分之前，形成直径小于规定直径的直腰部保持部; 通过使用单晶保持装置保持直腰部保持部; 并且在保持直腰部保持部的同时拉出直腰部产品部。 优选地，形成直腰部保持部的步骤包括改变拉拔速度以使其表面不均匀的步骤。
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公开(公告)号：US06171393B2
公开(公告)日：2001-01-09
申请号：US09251399
申请日：1999-02-17
IPC分类号： C30B1536
CPC分类号： C30B15/36 , Y10S117/902 , Y10T117/1032
摘要： A seed crystal 1 for manufacturing a single crystal incorporating an unconformity portion B formed at a predetermined position apart from a leading end thereof and structured to conduct the heat of melt and interrupt propagation of dislocation caused from thermal stress produced when dipping in the melt has been performed.
摘要翻译： 一种用于制造单晶的晶体1，其形成在与其前端隔开的预定位置处形成的不整合部分B，其被构造成导入熔体热并且中断由浸入熔体时产生的热应力引起的位错扩散 执行。
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5.发明授权
公开(公告)号：US6099642A
公开(公告)日：2000-08-08
申请号：US88657
申请日：1998-06-02
CPC分类号： C30B15/30 , C30B15/32 , Y10S117/911 , Y10T117/1004 , Y10T117/1008 , Y10T117/1072
摘要： An object of the invention is to provide a single crystal clamping device and a single crystal supporting method. The single crystal clamping device does not become inclined and does not vibrate, and the center of the single crystal clamping device is congruous to the center of the growing single crystal. An apparatus for pulling up single crystals of the present invention, comprises: a single crystal pulling up wire for pulling up a seed crystal immersed in a melt of a raw material; a single crystal clamping device for clamping one end of the single crystal grown beneath the seed crystal; a wire-winding mechanism fixed on the single crystal clamping means and winding up the single crystal pulling up wire so as to adjust a speed of the single-crystal pulling up wire corresponding to the ascending/descending speeds of the single crystal clamping device; a pulling up wire-load cell for detecting the load applied on the crystal; and a summation load cell for measuring the combined load applied on the crystal pulling up wire and the single crystal clamping device.
摘要翻译： 本发明的目的是提供一种单晶夹持装置和单晶支撑方法。 单晶夹持装置不会变得倾斜并且不振动，并且单晶夹持装置的中心与生长的单晶的中心一致。 本发明的单晶提拉装置，包括：单晶提拉线，用于拉出浸在原料熔体中的晶种; 用于夹持在晶种之下生长的单晶的一端的单晶夹持装置; 固定在单晶夹持装置上的绕线机构，并且卷绕单晶提拉线，以便根据单晶夹持装置的上升/下降速度调节单晶提拉线的速度; 用于检测施加在晶体上的负载的提拉线电池; 以及用于测量施加在晶体上拉线和单晶夹持装置上的组合负载的求和测力传感器。
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公开(公告)号：US5942033A
公开(公告)日：1999-08-24
申请号：US48302
申请日：1998-03-26
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1072
摘要： A crystal-clamping fixture 30 is suspended by a pulling up mechanism 1 through the use of wires. The crystal-clamping fixture 30 includes a box 31 and a plurality of holding rods 32. The box 31 has two openings formed on its top and bottom sides. The reduced portion 2a, the enlarged portion 2b and the necked portion 2c formed beneath the seed crystal 5 are allowed to penetrate through the two openings during the pulling up operation. A plurality of "S" shaped slots 31a, 31b are formed on the lateral sides of the box 31. The holding rods 32 capable of rotating along the path of the "S" shaped slots 31a, 31b are horizontally disposed within the box 31 by inserting their two end portions through the "S" shaped slots 31a, 31b. The holding rods kept restrained at the upper ends of the "S" shaped slots are pushed out by the conic surface formed at the upper part of the enlarged portion 2b and rotate and descend to reach the lower ends of the "S" shaped slots. At the time the crystal-clamping fixture 30 is directed to ascend a small distance, then the holding rods 32 contact the conic surface formed between the enlarged portion 2b and the necked portion 2c to clamp the single crystal 2.
摘要翻译： 通过使用电线，拉出机构1悬挂晶体夹具30。 晶体夹具30包括盒31和多个保持杆32.盒31具有在其顶侧和底侧上形成的两个开口。 在拉拔操作期间允许形成在晶种5下面的缩小部分2a，扩大部分2b和颈部2c穿过两个开口。 多个“S”形槽31a，31b形成在盒31的侧面上。能够沿着“S”形槽31a，31b的路径旋转的保持杆32通过 将它们的两个端部插入穿过“S”形槽31a，31b。 在“S”形槽的上端保持约束的保持杆被形成在扩大部分2b的上部的锥形表面推出，并且旋转和下降到达“S”形槽的下端。 当晶体夹具30被指向上升一小段距离时，保持杆32接触形成在扩大部分2b和颈缩部分2c之间的锥形表面，以夹紧单晶2。
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7.发明授权公开(公告)号：US07235128B2
公开(公告)日：2007-06-26
申请号：US11005180
申请日：2004-12-06
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , C30B15/22 , C30B15/36 , Y10S117/90 , Y10T117/1004
摘要： A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (ΔT) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (ΔT) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (ΔT) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal (14) is immersed in the melt (5) the temperature difference between the seed crystal (14) and the melt (5) falls within the determined allowable temperature difference (ΔT).
摘要翻译： 一种单晶半导体的制造方法及其装置。 可以使用不具有任何显着变化的现有设备来提升大直径和大重量的单晶半导体，同时不影响单晶半导体的氧浓度和熔体的温度，同时不会过度地提高温度 晶种。 特别地，预设晶种（14）的允许温差（DeltaT）和直径（D）之间的关系（L 1，L 2，L 3），使得晶种（14）在 籽晶（14）浸入熔体中的时间和熔体（5）落入未被引入到晶种（14）中的位错的允许温度差（DeltaT）之内。 根据关系（L 1，L 2，L 3），确定与浸入熔体中的晶种（14）的直径（D）相对应的容许温度差（DeltaT）。 进行温度控制，使晶种（14）浸入熔融物（5）中时晶种（14）和熔体（5）之间的温度差落在确定的允许温差（DeltaT）之内。
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公开(公告)号：US07329317B2
公开(公告)日：2008-02-12
申请号：US10533147
申请日：2003-10-31
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.
摘要翻译： 本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延缺陷区域α2N中，其下限线LN 1是表示生长速率V逐渐下降的线 随着硼浓度的增加。 还生产硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且热处理条件和 控制硅晶体的氧浓度使得OSF核不生长到OSF。
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公开(公告)号：US5488923A
公开(公告)日：1996-02-06
申请号：US399558
申请日：1995-03-07
申请人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
发明人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
IPC分类号： C30B15/02 , C30B29/06 , H01L21/208 , C30B15/04
CPC分类号： C30B15/02
摘要： The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater. In this manner, the single crystal whose impurity concentration is substantially uniform in the longitudinal direction can be grown continuously.
摘要翻译： 本发明采用这样一种结构，其中电阻器加热器设置在保护筒内部，其顶端与拉制装置内的坩埚的熔融液体包装区域打开，使得电阻器加热器在下部的尖端上方，并且温度设定可以 使其能够熔化起始材料。 由于在拉制单晶时保护筒的尖端位于熔融液体内部，所以保护筒内部的气相部分和拉动装置内部的气相部分被熔融液体分开，并且是独立的 并且通过电阻加热器在保护筒的下部熔融时，可以将加载到保护筒中的原料多晶棒供给到坩埚内的熔融液面。 以这种方式，可以连续生长杂质浓度在纵向方向上基本均匀的单晶。
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公开(公告)号：US20060005762A1
公开(公告)日：2006-01-12
申请号：US10533147
申请日：2003-10-31
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. Further, the present invention is to produce a silicon wafer wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and the heat treatment condition of the silicon crystal and the oxygen concentration in the silicon crystal are controlled so that no OSF nuclei grow to OSFs. Moreover, the present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that they fall in the vicinity of the lower limit line LN3 within the epitaxial defect-free region α1.
摘要翻译： 本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延无缺陷区域α2N中，其下限线LN1是表示生长速率V逐渐下降的线 硼浓度增加。 此外，本发明是为了制造硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且 控制硅晶体的热处理条件和硅晶体中的氧浓度，使得OSF核不生长到OSF。 此外，本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制为使得它们落入外延缺陷区域内的下限线LN3附近， SUB> 1 。
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