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公开(公告)号：US4357553A
公开(公告)日：1982-11-02
申请号：US177966
申请日：1980-08-14
CPC分类号： H03F13/00
摘要： A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means.
摘要翻译： 表面声波装置具有由半导体和压电层形成的叠层和局部地设置在半导体和所述压电层的界面部分的耗尽层控制装置，其中在除了 通过向耗尽层控制装置施加DC偏置电压和泵浦电压来控制耗尽层控制装置的耗尽层电容。
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公开(公告)号：US4473767A
公开(公告)日：1984-09-25
申请号：US438437
申请日：1982-11-02
CPC分类号： G06G7/195
摘要： A surface acoustic wave convolver comprises a piezoelectric substrate on which a plurality of conductive strip electrodes, an input signal transducer and a reference signal transducer are formed, and a semiconductive substrate on which depletion layer control electrodes and capacitance read-out electrodes are formed. The conductive strip electrodes are connected to the depletion layer control electrodes so that an output signal is taken up from the capacitance read-out electrodes.
摘要翻译： 声表面波卷积器包括其上形成有多个导电带状电极，输入信号传感器和参考信号换能器的压电基板，以及形成有耗尽层控制电极和电容读出电极的半导体基板。 导电条电极连接到耗尽层控制电极，从而从电容读出电极吸收输出信号。
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公开(公告)号：US4365216A
公开(公告)日：1982-12-21
申请号：US223059
申请日：1981-01-07
CPC分类号： H03F13/00
摘要： A surface-acoustic-wave device wherein a plurality of metal strips (S) are provided on a propagation path of surface acoustic wave which is formed in a laminate comprised of a piezoelectric layer (23) and a semiconductor (1), the metal strips are extended onto the semiconductor outside the propagation path of surface acoustic wave, and depletion layer capacitance non-linearity created on the semiconductor surface at a region where the metal strips are extended is used as a main factor of a parametric interaction.
摘要翻译： 一种表面声波装置，其中在由压电层（23）和半导体（1）构成的叠层中形成的表面声波的传播路径上设置有多个金属条（S），所述金属条 被扩展到表面声波的传播路径之外的半导体，并且在金属带延伸的区域处在半导体表面上产生的耗尽层电容非线性被用作参数相互作用的主要因素。
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公开(公告)号：US4529995A
公开(公告)日：1985-07-16
申请号：US397283
申请日：1982-07-12
申请人： Takamasa Sakai , Shoichi Minagawa
发明人： Takamasa Sakai , Shoichi Minagawa
IPC分类号： H01L29/93
CPC分类号： H01L29/93
摘要： Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor layer, and a barrier for generating a depletion layer formed on the surface opposite to said surface portion of said first conductivity type semiconductor layer, in which a capacitance reading-out section is disposed on said at least one second conductivity type semiconductor region. A depletion layer control section is disposed on said surface opposite to said surface portion; and said depletion layer control section is reversely biased so that said depletion layer extends from said barrier to a junction portion between said first conductivity type semiconductor layer and said at least one second conductivity type semiconductor region, whereby a capacitance variation results at said capacitance reading-out section in response to variation of the reverse bias voltage.
摘要翻译： 由具有第一导电类型半导体层的半导体衬底，形成在所述第一导电类型半导体层的表面部分中的至少一个第二导电类型半导体区域和用于产生在相对的表面上形成的耗尽层的势垒组成的可变电容器件 到所述第一导电类型半导体层的所述表面部分，其中电容读出部分设置在所述至少一个第二导电类型半导体区域上。 耗尽层控制部分设置在与所述表面部分相对的所述表面上; 并且所述耗尽层控制部分被反向偏置，使得所述耗尽层从所述势垒延伸到所述第一导电类型半导体层和所述至少一个第二导电类型半导体区域之间的接合部分，由此在所述电容读取 - 响应于反向偏置电压的变化。
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公开(公告)号：US4412906A
公开(公告)日：1983-11-01
申请号：US332996
申请日：1981-12-21
申请人： Yasuhiko Sato , Takamasa Sakai , Shoichi Minagawa
发明人： Yasuhiko Sato , Takamasa Sakai , Shoichi Minagawa
IPC分类号： C23C14/34 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C15/00
CPC分类号： H01L21/31 , C23C14/3407
摘要： A sputtering apparatus includes a target and a substrate holder respectively supported in a lower portion and an upper portion of a vacuum chamber, a gas jet opening located near the upper surface of the target, and gas withdrawal conduits located near the substrate holder, so that by supplying a gas to the vacuum chamber through the gas jet opening, the gas pressure in the chamber gradually decreases from the region near the target to the region near the substrate holder.
摘要翻译： 溅射装置包括分别支撑在真空室的下部和上部中的靶和衬底保持器，位于靶的上表面附近的气体射流开口和位于衬底保持器附近的气体取出管道，使得 通过通过气体喷射口向真空室供给气体，室内的气体压力从靠近靶的区域逐渐减小到靠近衬底保持器的区域。
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6.发明授权
公开(公告)号：US4841470A
公开(公告)日：1989-06-20
申请号：US875855
申请日：1986-06-18
IPC分类号： G06G7/195 , H03H9/02 , H04L27/18 , H04L27/227 , H04L27/233
CPC分类号： H03H9/02771 , G06G7/195 , H03H9/14564 , H04L27/2278 , H04L27/2331 , H03H9/02913 , H03H9/14547
摘要： A differential phase shift keying convolver having a plurality of tracks includes at least one track where an opposite phase convolution output is produced. Each track includes two output gates spaced at the center for differential phase shift keying demodulation. Among these output gates, some gates selected in accordance with the phase relationship between convolution outputs are connected to provide sum and/or difference outputs of the convolution signals. The opposite phase convolution outputs can be produced by arranging at least one of the input transducers in a step-like configuration, by using multistrip couplers, or by providing a metal film in a selected position of the traveling path of surface acoustic waves for application of a control voltage.
摘要翻译： 具有多个轨道的差分相移键控卷积器包括产生相反相位卷积输出的至少一个轨道。 每个轨道包括在中心间隔开的差分相移键控解调的两个输出门。 在这些输出门之中，根据卷积输出之间的相位关系选择的一些门被连接以提供卷积信号的和和/或差分输出。 相反的卷积输出可以通过使用多段耦合器布置至少一个输入换能器，通过使用多段耦合器，或者通过在表面声波的行进路径的选定位置提供金属膜来产生，以应用 一个控制电压。
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公开(公告)号：US4254388A
公开(公告)日：1981-03-03
申请号：US74626
申请日：1979-09-12
IPC分类号： H03H9/25 , G10K11/36 , H03F7/04 , H03F13/00 , H03H3/08 , H03H9/145 , H01L41/04 , H01L27/20 , H03H9/64
CPC分类号： H03F13/00 , G10K11/36 , H03F7/04 , H03H9/14508
摘要： A frequency selector apparatus wherein unidirectional input and output surface-acoustic-wave transducers are provided in an acoustic wave propagation path formed on a piezoelectric device and reflecting electrodes, to which a.c. signals are applied respectively, are disposed in the acoustic wave propagation path on opposite sides of the transducers and adjacent thereto.
摘要翻译： 一种频率选择装置，其中单向输入和输出表面声波换能器设置在形成在压电装置和反射电极上的声波传播路径中， 分别施加信号，设置在换能器的相对侧的声波传播路径中并与其相邻。
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公开(公告)号：US4745378A
公开(公告)日：1988-05-17
申请号：US99688
申请日：1987-09-18
CPC分类号： H03H9/6403 , H03H9/02566
摘要： The surface acoustic wave device includes a plurality of output gate electrodes provided between two signal input transducers on a piezoelectric layer on a semiconductor substrate, so that each output gate electrode receives a bias voltage unique to it and supplies an output signal based on the unique bias voltage.
摘要翻译： 表面声波装置包括设置在半导体衬底上的压电层上的两个信号输入传感器之间的多个输出栅电极，使得每个输出栅电极接收到其独有的偏置电压，并且基于唯一的偏置提供输出信号 电压。
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9.发明授权
公开(公告)号：US4625184A
公开(公告)日：1986-11-25
申请号：US508397
申请日：1983-06-27
CPC分类号： H03H7/38 , H03H9/02574 , H03H9/0542 , H03H9/14597 , H01F17/0006 , H01F17/0033
摘要： The surface acoustic wave device comprises an elastic substrate, a piezoelectric film deposited on the elastic substrate, and transducers and matching circuits both provided on the piezoelectric film or along the interface between the piezoelectric film and the elastic substrate.
摘要翻译： 表面声波装置包括弹性基板，沉积在弹性基板上的压电薄膜，以及均匀地设置在压电薄膜上或沿着压电薄膜和弹性基板之间的界面的换能器和匹配电路。
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公开(公告)号：US4543533A
公开(公告)日：1985-09-24
申请号：US527692
申请日：1983-08-30
申请人： Shoichi Minagawa , Takeshi Okamoto
发明人： Shoichi Minagawa , Takeshi Okamoto
IPC分类号： H03F7/00
CPC分类号： H03F7/00
摘要： The parametric amplifier includes plurality of parameter changing or exciting regions provided in a periodic array on a wave propagation medium having the property that waves having different frequencies travel through the medium at different velocities, so as to cause a parametric action only when a wave applied to the amplifier satisfies a predetermined condition relative to the dispersive nature of the medium.
摘要翻译： 参数放大器包括在波传播介质上以周期阵列设置的多个参数改变或激励区域，其特征在于具有不同频率的波以不同速度行进通过介质，从而仅当波应用于 放大器相对于介质的色散特性满足预定条件。
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