摘要:
A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means.
摘要:
A surface-acoustic-wave device wherein a plurality of metal strips (S) are provided on a propagation path of surface acoustic wave which is formed in a laminate comprised of a piezoelectric layer (23) and a semiconductor (1), the metal strips are extended onto the semiconductor outside the propagation path of surface acoustic wave, and depletion layer capacitance non-linearity created on the semiconductor surface at a region where the metal strips are extended is used as a main factor of a parametric interaction.
摘要:
A surface acoustic wave convolver comprises a piezoelectric substrate on which a plurality of conductive strip electrodes, an input signal transducer and a reference signal transducer are formed, and a semiconductive substrate on which depletion layer control electrodes and capacitance read-out electrodes are formed. The conductive strip electrodes are connected to the depletion layer control electrodes so that an output signal is taken up from the capacitance read-out electrodes.
摘要:
A differential phase shift keying convolver having a plurality of tracks includes at least one track where an opposite phase convolution output is produced. Each track includes two output gates spaced at the center for differential phase shift keying demodulation. Among these output gates, some gates selected in accordance with the phase relationship between convolution outputs are connected to provide sum and/or difference outputs of the convolution signals. The opposite phase convolution outputs can be produced by arranging at least one of the input transducers in a step-like configuration, by using multistrip couplers, or by providing a metal film in a selected position of the traveling path of surface acoustic waves for application of a control voltage.
摘要:
A frequency selector apparatus wherein unidirectional input and output surface-acoustic-wave transducers are provided in an acoustic wave propagation path formed on a piezoelectric device and reflecting electrodes, to which a.c. signals are applied respectively, are disposed in the acoustic wave propagation path on opposite sides of the transducers and adjacent thereto.
摘要:
A surface acoustic wave device comprises an elastic substrate; a lower electrode provided on the elastic substrate; a piezo-electric film covering the lower electrode; and plural upper electrodes which each include plural electrode fingers and are aligned with and spaced from each other on the piezoelectric film in confrontation with the lower electrode.
摘要:
A surface acoustic wave device in which first electrodes are provided on a piezoelectric film deposited on an elastic substrate, second electrodes between the piezoelectric film and the elastic substrate, and third electrode within the piezoelectric film, respectively, so that an electric signal is applied to the first and second electrodes.
摘要:
A surface acoustic wave device includes a silicon substrate having a main surface with a given crystalline orientation, a zinc oxide layer deposited on the main surface of the silicon substrate and a dielectric layer as well as electrodes both formed in contact with said zinc oxide layer, so that a surface acoustic wave will be propagated along a given crystalline axis direction of the silicon substrate.
摘要:
A surface acoustic wave device comprises a lower electrode provided on an elastic substrate, a piezoelectric film covering the lower electrode and an upper electrode provided on the piezoelectric film. The device is characterized in that the upper electrode comprises first and second double electrodes both opposed to the lower electrode.
摘要:
A surface-acoustic-wave parametric device characterized in that a width of a parametric interaction region in a direction perpendicular to the propagation direction of surface acoustic wave is varied so as to correspond to a desired frequency characteristic.