POWER TRANSMITTING TOOTHED BELT AND POWER TRANSMITTING DEVICE
    1.
    发明申请
    POWER TRANSMITTING TOOTHED BELT AND POWER TRANSMITTING DEVICE 审中-公开
    发电齿带和发电装置

    公开(公告)号:US20120058851A1

    公开(公告)日:2012-03-08

    申请号:US13217766

    申请日:2011-08-25

    IPC分类号: F16H7/02 F16G1/12 F16G1/28

    CPC分类号: F16G1/28 F16H7/023

    摘要: A power transmitting toothed belt having improved positioning accuracy between the toothed belt and a pulley, increased durability, and reduced contact noise, comprising a rubber back layer, a plurality of core wires and a rubber layer having a plurality of belt teeth, wherein the belt teeth are at oblique angle with respect to the direction of the width of the belt. The belt teeth intersect with straight pulley teeth having a pitch equal to the pitch of the belt teeth.

    摘要翻译: 一种具有改进的齿形皮带与滑轮之间的定位精度的传动齿形皮带,增加的耐久性和降低的接触噪音,包括橡胶背层,多个芯线和具有多个皮带齿的橡胶层,其中皮带 齿相对于带的宽度方向呈倾斜角。 带齿与具有等于带齿的间距的间距的直滑轮齿相交。

    Pulley for use with toothed belt
    3.
    发明授权
    Pulley for use with toothed belt 有权
    皮带轮用于带齿带

    公开(公告)号:US08562468B2

    公开(公告)日:2013-10-22

    申请号:US12578695

    申请日:2009-10-14

    IPC分类号: F16H7/02

    CPC分类号: F16H55/171 F16H7/023

    摘要: There is provided a pulley for use with a toothed belt capable of reducing the noise generated when the pulley engages with the toothed belt, while reducing the manufacturing costs and time used to manufacture the pulley. The pulley includes a disk whose inner circumference is fitly attached to a rotary shaft. The outer circumference of the pulley has teeth to be engaged with the toothed belt and flanges erected on both sides of the tooth, wherein the flanges have a plurality of through holes that penetrate through the flanges in a direction of the rotary shaft.

    摘要翻译: 提供了一种与齿形带一起使用的滑轮,其能够减少当滑轮与齿形带接合时产生的噪音,同时减少用于制造滑轮的制造成本和时间。 滑轮包括其内周适合地附接到旋转轴的盘。 皮带轮的外周具有与齿形皮带和凸缘接合的齿,该齿形皮带和凸缘竖立在齿的两侧,其中凸缘具有穿过凸缘沿着旋转轴的方向穿过的多个通孔。

    Method of making fault-free surface zone in semiconductor devices by
step-wise heat treating
    4.
    发明授权
    Method of making fault-free surface zone in semiconductor devices by step-wise heat treating 失效
    通过逐步热处理在半导体器件中制造无故障表面区域的方法

    公开(公告)号:US4376657A

    公开(公告)日:1983-03-15

    申请号:US213400

    申请日:1980-12-05

    CPC分类号: H01L21/3225 Y10S148/128

    摘要: In a gettering method for processing semiconductor wafers a semiconductor wafer such as a silicon wafer is first annealed in a non-oxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950.degree. to 1,300.degree. C., preferably at 1,050.degree. C., for more than 10 minutes, for example for four (4) hours, to diffuse out oxygen near the surfaces of the semiconductor wafer. Then the semiconductor wafer is annealed at a temperature in the range of 600.degree. to 800.degree. C., for example at 650.degree. C., for more than one hour, preferably for 16 hours, to create in the interior of the semiconductor wafer microdefects of high density.

    摘要翻译: 在用于处理半导体晶片的吸气方法中,首先在非氧化性气氛中,例如在氮气气氛中,在950〜1300℃的温度范围内退火诸如硅晶片的半导体晶片,优选地 在1050℃下超过10分钟,例如四(4)小时,以在半导体晶片的表面附近扩散出氧。 然后将半导体晶片在600℃至800℃的温度范围内,例如在650℃下退火超过1小时,优选16小时,以在半导体晶片的内部形成微缺陷 的高密度。