公开(公告)号：US20100132888A1

公开(公告)日：2010-06-03

申请号：US12699382

申请日：2010-02-03

申请人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

发明人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

IPC分类号： H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01L21/67253

摘要： A plasma processing apparatus includes a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device, a mass flow controller, a stage electrode receiving a workpiece, a high-frequency electrical source to, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.

摘要翻译： 等离子体处理装置包括等离子体处理主框架和控制等离子体处理主框架的装置控制器。 等离子体处理主框架具有真空处理室，排气装置，质量流量控制器，接收工件的阶段电极，高频电源和将工件放置在平台电极上的传送装置， 加工工件。 设备控制器按照预定的步骤控制等离子体处理主框架，并且设置有诊断装置，该诊断装置获取用于处理在室中携带的工件的多个配方和等离子体处理装置的装置参数，当上述特定配方 执行配方，由此基于所获取的装置参数来诊断等离子体处理主框架的状态。

公开(公告)号：US20100297783A1

公开(公告)日：2010-11-25

申请号：US12849233

申请日：2010-08-03

申请人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

发明人： Shoji IKUHARA ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

IPC分类号： H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01L21/67253

摘要： A method for performing a plasma process using a plasma processing apparatus which includes a vacuum process chamber, an exhaust device, a mass flow controller supplying a process gas, a stage electrode which receives and holds a workpiece by adsorption, a transfer device, and a high-frequency electrical source. The method includes a first step of performing the plasma process for the workpiece in the vacuum process chamber by a corresponding recipe of predetermined recipes, a second step of acquiring apparatus parameters showing the condition of the plasma processing apparatus when a specific recipe of the predetermined recipes is executed to diagnose whether the condition of the plasma processing apparatus is good or not based on the acquired apparatus parameters.

摘要翻译： 一种使用等离子体处理装置进行等离子体处理的方法，所述等离子体处理装置包括真空处理室，排气装置，供给处理气体的质量流量控制器，通过吸附接收和保持工件的载物台电极，转印装置和 高频电源。 该方法包括：通过预定配方的相应配方对真空处理室中的工件进行等离子体处理的第一步骤;获取当预定配方的特定配方时显示等离子体处理装置的状态的装置参数的第二步骤 被执行以基于所获取的装置参数来诊断等离子体处理装置的状况是否良好。

公开(公告)号：US20060260746A1

公开(公告)日：2006-11-23

申请号：US11199234

申请日：2005-08-09

申请人： Shoji Ikuhara ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

发明人： Shoji Ikuhara ,  Daisuke Shiraishi ,  Hideyuki Yamamoto ,  Akira Kagoshima ,  Hiromichi Enami ,  Yosuke Karashima ,  Eiji Matsumoto

IPC分类号： H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01L21/67253

摘要： There is provided a preventive maintenance technique capable of diagnosing apparatus conditions without causing serious decrease in uptime ratio. A plasma process apparatus is composed of a plasma processing main frame, and an apparatus controller controlling the plasma processing main frame. The plasma processing main frame has a vacuum process chamber, an exhaust device evacuating the vacuum process chamber, a mass flow controller supplying a process gas into the vacuum process chamber, a stage electrode receiving a workpiece and holding it by adsorption, a high-frequency electrical source applying a high-frequency electrical power to the supplied process gas to generate plasma, and a transfer device placing the workpiece on the stage electrode and carrying out the processed workpiece. The apparatus controller controls the plasma processing main frame in accordance with a predetermined procedure and is provided with a diagnosis device which acquires a plurality of recipes for processing workpieces carried in the chamber and apparatus parameters of the plasma processing apparatus when a specific recipe of the above recipes is executed, whereby the condition of the plasma processing main frame is diagnosed based on the acquired apparatus parameters.

摘要翻译： 提供了能够诊断装置条件而不引起正常运行时间比例严重降低的预防性维护技术。 等离子体处理装置由等离子体处理主框架和控制等离子体处理主框架的装置控制器构成。 等离子体处理主框架具有真空处理室，抽真空处理室的排气装置，向真空处理室供给工艺气体的质量流量控制器，接收工件并通过吸附保持其的阶段电极，高频 电源向所提供的处理气体施加高频电力以产生等离子体;以及传送装置，将工件放置在平台电极上并且执行被处理的工件。 设备控制器按照预定的步骤控制等离子体处理主框架，并且设置有诊断装置，该诊断装置获取用于处理在室中携带的工件的多个配方和等离子体处理装置的装置参数，当上述特定配方 执行配方，由此基于所获取的装置参数来诊断等离子体处理主框架的状态。