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公开(公告)号：US06490182B2
公开(公告)日：2002-12-03
申请号：US09972981
申请日：2001-10-10
申请人： Shuji Katoh , Hiromitsu Sakai , Shigeta Ueda , Tomomichi Ito , Hidetoshi Aizawa
发明人： Shuji Katoh , Hiromitsu Sakai , Shigeta Ueda , Tomomichi Ito , Hidetoshi Aizawa
IPC分类号： H02H7122
CPC分类号： H03K17/0828 , H02M1/32 , H02M7/5387 , H02M2001/0048 , H03K17/168 , Y02B70/1491
摘要： A semiconductor electric power converter in accordance with the present invention comprises an arm consisting of an IGBT, a capacitor connected between a collector and a gate of said IGBT, and a gate circuit connected to the gate of said IGBT for controlling the switching operation of said IGBT, wherein a plurality of said arms connected in series are connected in parallel and each midpoint of said arms connected in of series is connected to a load. Thereby the impedance between the gate terminal of the IGBT and the gate circuit is decreased when the gate voltage is higher than the gate voltage command value or the impedance between the gate and the emitter of the IGBT is decreased when the collector voltage is high so that an electric charge stored in the gate is rapidly discharged.
摘要翻译： 根据本发明的半导体电力转换器包括由IGBT组成的臂，连接在所述IGBT的集电极和栅极之间的电容器，以及连接到所述IGBT的栅极的栅极电路，用于控制所述IGBT的开关操作 IGBT，其中串联连接的多个所述臂并联连接，并且串联连接的所述臂的每个中点连接到负载。 因此，当栅极电压高于栅极电压指令值时，IGBT的栅极端子与栅极电路之间的阻抗降低，或者当集电极电压高时IGBT的栅极和发射极之间的阻抗降低，从而 存储在门中的电荷被快速排出。
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公开(公告)号：US06809561B2
公开(公告)日：2004-10-26
申请号：US10638400
申请日：2003-08-12
申请人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
发明人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
IPC分类号： H03K300
CPC分类号： H02M1/32 , H03K17/0828 , H03K17/107
摘要： A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.
摘要翻译： 一种半导体功率转换装置，包括在相应的驱动器的控制下分别施加栅极电压的MOS控制半导体器件如绝缘体 - 栅双极晶体管（IGBT）或金属氧化物MOS晶体管的至少一个串联布置。 当IGBT处于稳定导通状态时，驱动器具有比与其耦合的IGBT的栅极电压更高的电位的电源线，并且使得根据电流的电流使IGBT的栅极电压增加 在IGBT的导通状态下，当电源线和IGBT的发射极之间的电位差恒定并且集电极电压超过预定值时，电源线。
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公开(公告)号：US06727516B2
公开(公告)日：2004-04-27
申请号：US10095102
申请日：2002-03-12
申请人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
发明人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
IPC分类号： H01L2940
CPC分类号： H01L27/0641 , H03K17/0828 , H03K2217/0036
摘要： A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
摘要翻译： 电力转换装置具有分压IGBT的集电极电压的电路结构。 它还具有通过向IGBT的栅极输出分压点的电位来保护IGBT免受施加到集电极的过电压的单元。 在分压点的高压侧的电阻器的情况固定为IGBT的发射极电位。
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公开(公告)号：US06717177B2
公开(公告)日：2004-04-06
申请号：US10400479
申请日：2003-03-28
申请人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
发明人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
IPC分类号： H01L2940
CPC分类号： H01L27/0641 , H03K17/0828 , H03K2217/0036
摘要： A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
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公开(公告)号：US06703874B2
公开(公告)日：2004-03-09
申请号：US10436265
申请日：2003-05-13
申请人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
发明人： Shuji Katoh , Shigeta Ueda , Hiromitsu Sakai , Takashi Ikimi , Tomomichi Ito
IPC分类号： H03K300
CPC分类号： H02M1/32 , H03K17/0828 , H03K17/107
摘要： A gate driver is provided for controlling a gate voltage of each of a plurality of MOS control semiconductor devices, such as IGBTs or metal oxide MOS transistors, of a semiconductor power converter in which said MOS control semiconductors are connected in series with each other, the gate driver includes a power supply line having a higher potential than a gate potential on each of said MOS control semiconductor devices when in steady ON state, and an arrangement for supplying a current from the power source line to the gate of each of said MOS control semiconductors to increase the gate voltage of the MOS control semiconductor devices when a potential difference between said power supply line and an emitter of each of said MOS control semiconductors is constant and when a collector voltage of the MOS control semiconductor device exceeds a predetermined value under ON state of the MOS control semiconductor device.
摘要翻译： 提供一种栅极驱动器，用于控制半导体功率转换器中的多个MOS控制半导体器件（例如IGBT或金属氧化物MOS晶体管）中的每一个的栅极电压，其中所述MOS控制半导体彼此串联连接， 栅极驱动器包括在稳定导通状态时具有比每个所述MOS控制半导体器件上的栅极电位高的电位的电源线，以及用于将电流从电源线提供给每个所述MOS控制的栅极的装置 半导体，当所述电源线和所述MOS控制半导体的每一个的发射极之间的电位差恒定时，以及当所述MOS控制半导体器件的集电极电压在ON时超过预定值时，增加所述MOS控制半导体器件的栅极电压 MOS控制半导体器件的状态。
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公开(公告)号：US06380796B2
公开(公告)日：2002-04-30
申请号：US09838470
申请日：2001-04-20
IPC分类号： H03K17687
CPC分类号： H02M1/08 , H03K4/00 , H03K17/166 , H03K17/168
摘要： A semiconductor power converting apparatus includes a semiconductor element for controlling a current flowing between a collector and an emitter in response to a gate condition, a driving device connected to the gate, for driving the gate in response to a drive signal entered thereinto, a voltage applying device for applying both a forward bias and a reverse bias to the gate so as to set the emitter of the semiconductor element to a neutral potential, and a voltage dividing device for dividing a voltage appearing between the collector and the emitter of the semiconductor element, in which the drive signal is under OFF state, a voltage produced based upon the divided voltage by the voltage dividing device is applied to the gate, and the gate voltage is controlled in response to the voltage appearing between the collector and the emitter of the semiconductor element, thereby reducing the snubbed loss.
摘要翻译： 半导体功率转换装置包括：半导体元件，用于响应于栅极条件控制在集电极和发射极之间流动的电流;连接到栅极的驱动装置，用于响应输入的驱动信号驱动栅极;电压 施加装置，用于向栅极施加正向偏压和反向偏压，以将半导体元件的发射极设置为中性电位;以及分压装置，用于分割半导体元件的集电极和发射极之间的电压 ，其中驱动信号处于OFF状态，将通过分压装置分压的电压产生的电压施加到栅极，并且响应于集电极和发射极之间出现的电压来控制栅极电压 半导体元件，从而减少缓冲损耗。
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公开(公告)号：US06242968B1
公开(公告)日：2001-06-05
申请号：US09642816
申请日：2000-08-22
IPC分类号： H03K17687
CPC分类号： H02M1/08 , H03K4/00 , H03K17/166 , H03K17/168
摘要： A semiconductor power converting apparatus includes a semiconductor element for controlling a current flowing between a collector and an emitter in response to a gate condition, a driving device connected to the gate, for driving the gate in response to a drive signal entered thereinto, a voltage applying device for applying both a forward bias and a reverse bias to the gate so as to set the emitter of the semiconductor element to a neutral potential, and a voltage dividing device for dividing a voltage appearing between the collector and the emitter of the semiconductor element, in which the drive signal is under OFF state, a voltage produced based upon the divided voltage by the voltage dividing device is applied to the gate, and the gate voltage is controlled in response to the voltage appearing between the collector and the emitter of the semiconductor element, thereby reducing the snubbed loss.
摘要翻译： 半导体功率转换装置包括：半导体元件，用于响应于栅极条件控制在集电极和发射极之间流动的电流;连接到栅极的驱动装置，用于响应输入的驱动信号驱动栅极;电压 施加装置，用于向栅极施加正向偏压和反向偏压，以将半导体元件的发射极设置为中性电位;以及分压装置，用于分割半导体元件的集电极和发射极之间的电压 ，其中驱动信号处于OFF状态，将通过分压装置分压的电压产生的电压施加到栅极，并且响应于集电极和发射极之间出现的电压来控制栅极电压 半导体元件，从而减少缓冲损耗。
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公开(公告)号：US07643317B2
公开(公告)日：2010-01-05
申请号：US11964274
申请日：2007-12-26
摘要： In a system to which a fluctuating load is connected, compensating for fluctuation in voltage harmonics at the load connecting point and fluctuation in system current harmonics has been difficult for a power converting device connected in parallel with the load. To resolve the problem, a power converting device connected in parallel with a fluctuating load includes: a Fourier series expansion unit which executes Fourier series expansion to load current by use of a reference sine wave in sync with a system and thereby outputs Fourier coefficients; and a fundamental component calculating unit which calculates a positive phase active fundamental component of the load current from the Fourier coefficients. A current instruction of the power converting device is generated by subtracting the fundamental current from the load current. With the current instruction, the fluctuations in system current harmonics and in voltage harmonics at the connecting point can be compensated for.
摘要翻译： 在连接波动负载的系统中，与负载并联连接的电力转换装置难以补偿负载连接点的电压谐波的波动和系统电流谐波的波动。 为了解决该问题，与波动负载并联连接的电力转换装置包括：傅立叶级数扩展单元，其通过使用与系统同步的参考正弦波来执行傅里叶级数展开以加载电流，从而输出傅立叶系数; 以及从傅立叶系数计算负载电流的正相位有源基波分量的基波分量计算单元。 通过从负载电流中减去基波电流来产生电力转换装置的电流指令。 利用当前的指令，可以补偿系统电流谐波和连接点电压谐波的波动。
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公开(公告)号：US20090168474A1
公开(公告)日：2009-07-02
申请号：US11964274
申请日：2007-12-26
IPC分类号： H02M1/00
摘要： In a system to which a fluctuating load is connected, compensating for fluctuation in voltage harmonics at the load connecting point and fluctuation in system current harmonics has been difficult for a power converting device connected in parallel with the load. To resolve the problem, a power converting device connected in parallel with a fluctuating load includes: a Fourier series expansion unit which executes Fourier series expansion to load current by use of a reference sine wave in sync with a system and thereby outputs Fourier coefficients; and a fundamental component calculating unit which calculates a positive phase active fundamental component of the load current from the Fourier coefficients. A current instruction of the power converting device is generated by subtracting the fundamental current from the load current. With the current instruction, the fluctuations in system current harmonics and in voltage harmonics at the connecting point can be compensated for.
摘要翻译： 在连接波动负载的系统中，与负载并联连接的电力转换装置难以补偿负载连接点的电压谐波的波动和系统电流谐波的波动。 为了解决该问题，与波动负载并联连接的电力转换装置包括：傅立叶级数扩展单元，其通过使用与系统同步的参考正弦波来执行傅立叶级数展开以加载电流，从而输出傅里叶系数; 以及从傅立叶系数计算负载电流的正相位有源基波分量的基波分量计算单元。 通过从负载电流中减去基波电流来产生电力转换装置的电流指令。 利用当前的指令，可以补偿系统电流谐波和连接点电压谐波的波动。
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公开(公告)号：US08213146B2
公开(公告)日：2012-07-03
申请号：US12870309
申请日：2010-08-27
申请人： Shuji Katoh , Toshihiko Matsuda , Takashi Ikimi , Hiroshi Nagata
发明人： Shuji Katoh , Toshihiko Matsuda , Takashi Ikimi , Hiroshi Nagata
IPC分类号： H02H3/20
CPC分类号： H03K17/0828 , H02M1/088 , H02M7/487 , H03K17/567 , H03K17/6871
摘要： A semiconductor power conversion apparatus capable of protecting an IGBT from an overvoltage by supplying a sufficient gate current to the gate of the IGBT. The IGBT is protected from the overvoltage by connecting clamping elements connected in series between a collector of the IGBT and the gate thereof, and by connecting a resistor to each of different junction points between the clamping elements connected in series.
摘要翻译： 一种半导体功率转换装置，其能够通过向IGBT的栅极提供足够的栅极电流来保护IGBT免于过电压。 通过将串联连接在IGBT的集电极和栅极之间的钳位元件连接在串联连接的钳位元件之间的不同连接点上的每个不同连接点上，将IGBT保护为过电压。
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