摘要:
An amplifier circuit of a symmetrical type is implemented with load transistors 1, 3, 5, 6 and input transistors 2, 4. Load transistors 1, 5 and input transistor 2 constitute a first inverter, and load transistors 3, 6 and input transistor 4 constitute a second inverter. A change in the output potential of each inverter is transmitted to a load transistor of the other inverter and increases the fluctuation of the potential of an output signal. A transistor 9 or 10 for current control is arranged between an input transistor and ground or between a load transistor and a power supply. The transistor 9 or 10 for current control interrupts through current when operation of the amplifier circuit is unnecessary and enhances the gain when the amplifier circuit is on operation. The gain is enhanced by setting the conductance of the load transistor and the conductance of the input transistor on predetermined conditions. Furthermore, an offset voltage caused in each amplifier circuit is canceled out by connecting two sets of symmetrical-type amplifier circuits.
摘要:
A semiconductor integrated circuit includes a plurality of emitter-coupled logic (ECL) circuits (10) and circuitry (5, 6a, 6b) generating a reference potential to determine the logic threshold value of the ECL circuits. The reference potential generating circuitry is provided near a first pad (2) for a first supply voltage (VCC) and includes a circuit (5) for generating a first reference potential from the first supply voltage, and a circuit (6a, 6b) provided one for each the group of ECL circuits and provided near an associated ECL circuit group for generating a second reference potential from the first reference potential to generate a reference potential as the logic threshold potential of a corresponding ECL circuit. The semiconductor integrated circuit further includes a first clamping potential generating circuit (16) provided near the first pad for generating a first clamping potential in response to the first supply voltage, and a first clamping circuit (113) for clamping the potential at a node of current/voltage converting resistance element (205, 206) included in the ECL circuits at a first voltage in response to the first clamping potential.
摘要:
When an input terminal, which is connected to an input transistor, is opened, a transistor having an emitter connected to the input transistor conducts to supply constant current to a constant current source which is connected to the emitter of the input transistor. Therefore, load current of a reference circuit connected to the constant current source is not changed even if the input terminal is opened. As the result, current valves of all constant current sources receiving voltage from the reference circuit are not changed so that the internal circuit of a semiconductor integrated circuit device can be stably operated.
摘要:
When an input terminal, which is connected to an input transistor, is opened, a transistor having an emitter connected to the input transistor conducts to supply constant current to a constant current source which is connected to the emitter of the input transistor. Therefore, load current of a reference circuit connected to the constant current source is not changed even if the input terminal is opened. As the result, current values of all constant current sources receiving voltage from the reference circuit are not changed so that the internal circuit of a semiconductor integrated circuit device can be stably operated.
摘要:
A structure for a fuel filler tube opening comprises: a fuel adapter (17) having a filler tube opening (15); a fuel lid (16) for closing an opening (13) formed in a vehicle body (27); and a protective cover (32) provided on an inner surface (31) of the fuel lid (16). The protective cover (32) is separated by the distance (d) from an insertion opening (24) of the filler tube opening (15) and surrounds the insertion opening (24).
摘要:
In a memory block that is to be subjected to an erasure operation, voltage of the ground level is selectively supplied to only one word line. By applying an erasure pulse to a source line, memory cell transistors have their threshold voltages shifted. As to another word line, a pulse of a positive voltage is supplied in synchronization to the application of an erasure pulse to the source line. Another group of memory cell transistors do not have their threshold voltages shifted.
摘要:
Operations of applying an erase pulse and further performing block program before erasure are executed in steps S2 and S3 before applying the erase pulse on a block by block basis. This narrows the distribution width of the threshold voltage, and reduces the number of the memory transistors to be subjected to over-erase verify so that a total erasing time of data of a flash memory can be reduced.
摘要:
At least a part of a cylindrical body (20) is rotatably and unslidably housed in a front cylinder (10). A beam (30) for retaining a stick type cosmetic material (4) on the upper end side is made unrotatable and slidable to the front cylinder (10) by a sliding mechanism and made feedable by a rotation together with the cylindrical body (20) by a feeding mechanism. The beam (30) is always urged downward by a return spring (6). It is arranged such that a lower end part of the cylindrical body (20) is at the same level as that of a lower end part of the front cylinder (10) and a synchronous engagement section (26) formed on an inner circumferential surface of a lower end part of the cylindrical body (20) is synchronously engaged with a synchronous engagement shaft 43 provided at a bottom (42) of a container body (2). An O-ring (5) is installed between the front cylinder (10) and the container body (2).
摘要:
A liquid cosmetic container which has a secure mechanism for defining the limit of the aperture regulation of a remover 13 is provided. In addition, the degree of aperture of the remover 13 is not influenced by the operation of putting or removing a cap 3. The liquid cosmetic container is provided with the cap 3, and an aperture-regulating ring 7 engages with an upper outer face of a container main body 19. A neck 5 which has an aperture regulating section 11 on the rear end moves in an axial direction in response to rotations of the aperture-regulating ring 7, thereby varying the diameter of a central aperture 119 of the remover 13. Furthermore a rotation-limiting piece 103 extends from a lower end of the aperture-regulating ring 7 and a rotation-limiting projection 136 is provided on an outer face of the container main body 19 which is under an engaging surface of the aperture-regulating ring 7. The rotation of the aperture-regulating ring 7 is regulated by the contact of the rotation-limiting piece 103 with the rotation-limiting projection 136.
摘要:
An NAND gate for outputting an output establishment detection signal in response to the fact that a complementary output of a latch type sense amplifier has been established is provided. When a tristate buffer is activated by signal, a word line which has been in a selected state is rendered non-selected state. Accordingly, current can be prevented from leaking from a power supply line to a ground line in tristate buffer. In addition, column current Ic flowing through memory cells can be minimized in response to the fact that word line has been set to a selected state.