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公开(公告)号：US20060148218A1
公开(公告)日：2006-07-06
申请号：US11322653
申请日：2006-01-03
IPC分类号： H01L21/36
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L21/31662 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
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公开(公告)号：US06489189B2
公开(公告)日：2002-12-03
申请号：US10041844
申请日：2001-10-24
IPC分类号： H01L2184
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L21/31662 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
摘要翻译： 将少量的镍引入形成在玻璃基板上的非晶硅膜中，通过加热使非晶硅膜结晶。 在这种情况下，镍元素保留在结晶硅膜中。 在结晶硅膜的表面上形成非晶硅膜，然后进行热处理。 通过这种热处理，镍元素在非晶硅膜中扩散，从而能够降低结晶硅膜中的镍浓度。
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公开(公告)号：US5915174A
公开(公告)日：1999-06-22
申请号：US536973
申请日：1995-09-29
IPC分类号： H01L21/20 , H01L21/322 , H01L21/336 , H01L21/00
CPC分类号： H01L29/66757 , H01L21/2022 , H01L21/3221
摘要： The solution (for example, a nickel acetate solution) containing a metal element such as nickel which accelerates the crystallization of silicon is applied to an amorphous silicon film by spin coating using a mask, to retain nickel in contact with the surface of the amorphous silicon film. Then, heating treatment is performed to crystallize selectively the amorphous silicon film, so that an amorphous region and a crystalline region are formed in the silicon film. In this state, the silicon film is heated to diffuse the metal element from the crystalline region to the amorphous region, thereby decreasing a concentration of the metal element in the crystalline region.
摘要翻译： 含有加速硅结晶化的镍等金属元素的溶液（例如，乙酸镍溶液）通过使用掩模的旋涂法施加到非晶硅膜上，以保持镍与非晶硅的表面接触 电影。 然后，进行加热处理以使非晶硅膜选择性结晶，从而在硅膜中形成非晶区域和结晶区域。 在这种状态下，加热硅膜使金属元素从结晶区域扩散到非晶区域，从而降低结晶区域中金属元素的浓度。
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公开(公告)号：USRE43450E1
公开(公告)日：2012-06-05
申请号：US10678139
申请日：2003-10-06
IPC分类号： H01L21/225 , H01L21/324 , H01L21/336 , C30B1/02 , C30B31/02 , H01L29/786
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L29/78675
摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.
摘要翻译： 本发明的一个目的是提供一种通过使用镍结晶的还原硅膜中的镍元素的技术。 将非常少量的镍引入形成在玻璃基板上的非晶硅膜中。 然后通过加热使非晶硅膜结晶。 此时，镍元素残留在结晶硅膜中。 然后在镍的作用下，在硅膜的表面上形成非晶硅膜。 然后将非晶硅膜进一步热处理。 通过进行这种热处理，镍元素从结晶硅膜分散到非晶硅膜中，结果是结晶硅膜中的镍密度降低。
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公开(公告)号：US07553716B2
公开(公告)日：2009-06-30
申请号：US11322653
申请日：2006-01-03
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L21/31662 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
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公开(公告)号：US06991976B2
公开(公告)日：2006-01-31
申请号：US10293156
申请日：2002-11-12
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L21/31662 , H01L27/1277 , H01L29/04 , H01L29/66757
摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
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公开(公告)号：US06331475B1
公开(公告)日：2001-12-18
申请号：US09190408
申请日：1998-10-23
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022
摘要： In producing a thin film transistor (TFT), an silicon oxide film is formed as an under film on a glass substrate, and then an amorphous silicon film is formed therein. A metal element which promotes crystallization of silicon is disposed in contact with a surface of the amorphous silicon film. A thermal processing for the amorphous silicon film is performed at a crystallization temperature of the amorphous silicon film or higher. At the thermal processing, a glass substrate is placed on an object having constant flatness. Cooling is performed to obtain a crystalline silicon film wherein the substrate is not distorted and deformed.
摘要翻译： 在制造薄膜晶体管（TFT）时，在玻璃基板上形成作为底膜的氧化硅膜，然后在其中形成非晶硅膜。 促进硅结晶的金属元素与非晶硅膜的表面接触地设置。 在非晶硅膜的结晶温度以上进行非晶硅膜的热处理。 在热处理中，将玻璃基板放置在具有恒定平坦度的物体上。 进行冷却以获得晶体硅膜，其中基底不变形和变形。
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公开(公告)号：US6071766A
公开(公告)日：2000-06-06
申请号：US115838
申请日：1998-07-15
IPC分类号： H01L21/20 , H01L29/786 , H01L21/00
CPC分类号： H01L21/2022 , C03C17/3482 , H01L29/78675 , C03C2218/152 , C03C2218/153
摘要： An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.
摘要翻译： 本发明的一个目的是提供一种通过使用镍结晶的还原硅膜中的镍元素的技术。 将非常少量的镍引入形成在玻璃基板上的非晶硅膜中。 然后通过加热使非晶硅膜结晶。 此时，镍元素残留在结晶硅膜中。 然后在镍的作用下，在硅膜的表面上形成非晶硅膜。 然后将非晶硅膜进一步热处理。 通过进行这种热处理，镍元素从结晶硅膜分散到非晶硅膜中，结果是结晶硅膜中的镍密度降低。
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公开(公告)号：US6048758A
公开(公告)日：2000-04-11
申请号：US789193
申请日：1997-01-23
IPC分类号： H01L21/20 , H01L21/336 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L21/2022
摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
摘要翻译： 将少量的镍引入形成在玻璃基板上的非晶硅膜中，通过加热使非晶硅膜结晶。 在这种情况下，镍元素保留在结晶硅膜中。 在结晶硅膜的表面上形成非晶硅膜，然后进行热处理。 通过这种热处理，镍元素在非晶硅膜中扩散，从而能够降低结晶硅膜中的镍浓度。
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公开(公告)号：US20050037554A1
公开(公告)日：2005-02-17
申请号：US10946072
申请日：2004-09-22
IPC分类号： C30B1/02 , H01L21/02 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , H01L21/00
CPC分类号： H01L21/02672 , C30B1/02 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L29/66757
摘要： In a method for manufacturing a crystalline silicon film by utilizing a metal element that accelerates the crystallization of silicon, an adverse influence of this metal element can be suppressed. A semiconductor device manufacturing method is comprised of the steps of: forming an amorphous silicon film on a substrate having an insulating surface; patterning the amorphous silicon film to form a predetermined pattern; holding a metal element that accelerates the crystallization of silicon in such a manner that the metal element is brought into contact with the amorphous silicon film; performing a heating process to crystalize the amorphous silicon film, thereby being converted into a crystalline silicon film; and etching a peripheral portion of the pattern of the crystalline silicon film.
摘要翻译： 在通过利用加速硅的结晶化的金属元素制造结晶硅膜的方法中，可以抑制该金属元素的不良影响。 半导体器件制造方法包括以下步骤：在具有绝缘表面的衬底上形成非晶硅膜; 图案化非晶硅膜以形成预定图案; 保持以使金属元素与非晶硅膜接触的方式加速硅的结晶的金属元素; 进行加热处理以使非晶硅膜结晶化，从而转变成晶体硅膜; 并蚀刻晶体硅膜的图案的周边部分。
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