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公开(公告)号：US20120175619A1
公开(公告)日：2012-07-12
申请号：US13367805
申请日：2012-02-07
IPC分类号： H01L33/08
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
摘要翻译： 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。
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2.发明授权Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film 有权显示装置包括形成在栅极绝缘膜中的开口，钝化膜和阻挡膜公开(公告)号：US08120031B2
公开(公告)日：2012-02-21
申请号：US11882146
申请日：2007-07-31
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
摘要翻译： 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。
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公开(公告)号：US20070278489A1
公开(公告)日：2007-12-06
申请号：US11882146
申请日：2007-07-31
IPC分类号： H01L33/00
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
摘要翻译： 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。
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公开(公告)号：US09366930B2
公开(公告)日：2016-06-14
申请号：US13367805
申请日：2012-02-07
IPC分类号： H01L29/04 , H01L27/01 , H01L23/58 , G02F1/1368 , H01L27/32 , H01L51/52 , H05B33/04 , G02F1/1333 , G02F1/1362
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
摘要翻译： 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。
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5.发明授权公开(公告)号：US07256421B2
公开(公告)日：2007-08-14
申请号：US10437446
申请日：2003-05-14
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements' (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
摘要翻译： 提供了一种用于防止发光装置的劣化并保持每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。
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公开(公告)号：US07629617B2
公开(公告)日：2009-12-08
申请号：US11585954
申请日：2006-10-25
IPC分类号： H01L27/15
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/3276 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L51/524 , H01L51/5246 , H01L51/5256 , H01L51/5259 , H01L51/5284 , H01L2227/323
摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.
摘要翻译： 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。
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7.发明授权Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks 有权制造半导体器件的方法包括使用栅电极和抗蚀剂作为掩模的掺杂步骤公开(公告)号：US07198992B2
公开(公告)日：2007-04-03
申请号：US10867515
申请日：2004-06-14
申请人： Takashi Hamada , Satoshi Murakami , Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Toru Takayama
发明人： Takashi Hamada , Satoshi Murakami , Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Toru Takayama
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/2022 , H01L21/3226 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L27/1288 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L51/5253 , H01L51/56
摘要： The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode.
摘要翻译： 本发明的特征在于，在通过阻挡层使用催化元件而获得的结晶半导体膜上形成含有稀有气体元素的半导体膜，催化元素从结晶半导体膜移动到含有 稀有气体元素通过热处理。 此外，形成在第一n沟道TFT的半导体层中的第一杂质区域和第二杂质区域设置在栅电极的外侧。 形成在第二n沟道TFT的半导体层中的第三杂质区域设置成与栅电极部分重叠。 第三杂质区域设置在栅极外部。 形成在p沟道TFT的半导体层中的第四杂质区域设置成与栅电极部分重叠。 第五杂质区域设置在栅极外部。
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公开(公告)号：US20050056840A1
公开(公告)日：2005-03-17
申请号：US10961144
申请日：2004-10-12
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/52 , H01L29/04
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/3276 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L51/524 , H01L51/5246 , H01L51/5256 , H01L51/5259 , H01L51/5284 , H01L2227/323
摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.
摘要翻译： 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。
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公开(公告)号：US06822264B2
公开(公告)日：2004-11-23
申请号：US10294839
申请日：2002-11-15
IPC分类号： H01L2715
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/3276 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L51/524 , H01L51/5246 , H01L51/5256 , H01L51/5259 , H01L51/5284 , H01L2227/323
摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.
摘要翻译： 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。
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公开(公告)号：US08174029B2
公开(公告)日：2012-05-08
申请号：US13082104
申请日：2011-04-07
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译： 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。
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