Aspherical optical surfaces and optical scanners
    2.
    发明授权
    Aspherical optical surfaces and optical scanners 有权
    非球面光学表面和光学扫描仪

    公开(公告)号:US09158109B2

    公开(公告)日:2015-10-13

    申请号:US13943846

    申请日:2013-07-17

    申请人: Si-Ware Systems

    IPC分类号: G02B26/10 G02B5/10

    CPC分类号: G02B26/10 G02B5/10 G02B26/101

    摘要: Optical systems with aspherical optical elements are described. The aspherical optical elements have surfaces in which the in-plane radius of curvature spatially varies and the in-plane cross section surface profile is characterized in that the multiplication of the cosine of the incidence angle raised to a non-zero exponent by the in-plane radius of curvature varies less than twenty percent between any two points on the in-plane cross section surface profile.

    摘要翻译: 描述了具有非球面光学元件的光学系统。 非球面光学元件具有表面,其中面内曲率半径在空间上变化,并且面内截面表面轮廓的特征在于,入射角的余弦乘以非零指数, 平面曲率半径在平面截面表面轮廓上的任意两个点之间变化小于百分之二十。

    Aspherical optical surfaces and optical scanners
    3.
    发明申请
    Aspherical optical surfaces and optical scanners 有权
    非球面光学表面和光学扫描仪

    公开(公告)号:US20140022618A1

    公开(公告)日:2014-01-23

    申请号:US13943846

    申请日:2013-07-17

    申请人: Si-Ware Systems

    IPC分类号: G02B26/10

    CPC分类号: G02B26/10 G02B5/10 G02B26/101

    摘要: Optical systems with aspherical optical elements are described. The aspherical optical elements have surfaces in which the in-plane radius of curvature spatially varies and the in-plane cross section surface profile is characterized in that the multiplication of the cosine of the incidence angle raised to a non-zero exponent by the in-plane radius of curvature varies less than twenty percent between any two points on the in-plane cross section surface profile.

    摘要翻译: 描述了具有非球面光学元件的光学系统。 非球面光学元件具有表面,其中面内曲率半径在空间上变化,并且面内截面表面轮廓的特征在于,入射角的余弦乘以非零指数, 平面曲率半径在平面截面表面轮廓上的任意两个点之间变化小于百分之二十。

    STRUCTURED SILICON-BASED THERMAL EMITTER
    4.
    发明申请
    STRUCTURED SILICON-BASED THERMAL EMITTER 有权
    结构硅基热发射体

    公开(公告)号:US20170012199A1

    公开(公告)日:2017-01-12

    申请号:US15203773

    申请日:2016-07-06

    申请人: Si-Ware Systems

    IPC分类号: H01L49/00

    摘要: An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

    摘要翻译: 提供由诸如黑色硅的无序半导体材料产生的光辐射源。 光辐射源包括半导体衬底,在半导体衬底中蚀刻的无序半导体结构和设置在无序半导体结构附近的加热元件,其被配置为将无序半导体结构加热到无序半导体结构发射热红外辐射的温度 。